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    SYSTEMS AND METHODS FOR NON-CONTACT POWER AND DATA TRANSFER IN ELECTRONIC DEVICES
    1.
    发明申请
    SYSTEMS AND METHODS FOR NON-CONTACT POWER AND DATA TRANSFER IN ELECTRONIC DEVICES 审中-公开
    电子设备中非接触电源和数据传输的系统和方法

    公开(公告)号：WO2012037444A3

    公开(公告)日：2012-05-31

    申请号：PCT/US2011051899

    申请日：2011-09-16

    Applicant: CASCADE MICROTECH INC ,  STRID ERIC W

    Inventor： STRID ERIC W

    IPC: H04W4/00

    CPC classification number: H04B5/0031 ,  H02J5/005 ,  H02J50/05 ,  H02J50/12 ,  H02J50/90 ,  H04B5/0037

    Abstract: Systems and methods for non-contact and/or wireless transmission of power and/or data between and/or within electronic devices. These systems and methods may include the use of two or more wireless power modules to transmit a wireless power signal between a first electronic device and a second electronic device and/or the use of two or more wireless data modules to transmit a wireless data signal between the first electronic device and the second electronic device. The wireless power modules and/or the wireless data modules may include one or more near-field coupling devices. The wireless power modules and/or wireless data modules associated with the first electronic device may be arranged in complementary locations to the wireless power modules and/or wireless data modules associated with the second electronic device and the complementary modules may be separated by a distance of less than 10 um.

    Abstract translation: 电子设备之间和/或内部的电力和/或数据的非接触和/或无线传输的系统和方法。 这些系统和方法可以包括使用两个或更多个无线功率模块来在第一电子设备和第二电子设备之间传输无线功率信号和/或使用两个或更多个无线数据模块来在无线数据模块之间传输无线数据信号 第一电子设备和第二电子设备。 无线功率模块和/或无线数据模块可以包括一个或多个近场耦合设备。 与第一电子设备相关联的无线功率模块和/或无线数据模块可以布置在与第二电子设备相关联的无线功率模块和/或无线数据模块的互补位置，并且互补模块可以被分开 小于10 um。

    HIGH FREQUENCY INTERCONNECT STRUCTURES, ELECTRONIC ASSEMBLIES THAT UTILIZE HIGH FREQUENCY INTERCONNECT STRUCTURES, AND METHODS OF OPERATING THE SAME
    2.
    发明申请
    HIGH FREQUENCY INTERCONNECT STRUCTURES, ELECTRONIC ASSEMBLIES THAT UTILIZE HIGH FREQUENCY INTERCONNECT STRUCTURES, AND METHODS OF OPERATING THE SAME 审中-公开
    高频互连结构，利用高频互联结构的电子组件及其操作方法

    公开(公告)号：WO2012167014A2

    公开(公告)日：2012-12-06

    申请号：PCT/US2012040366

    申请日：2012-06-01

    Applicant: CASCADE MICROTECH INC ,  STRID ERIC W ,  CAMPBELL RICHARD L ,  SMITH KENNETH R ,  GLEASON K REED ,  JUNG KOOHO

    Inventor： STRID ERIC W ,  CAMPBELL RICHARD L ,  SMITH KENNETH R ,  GLEASON K REED ,  JUNG KOOHO

    IPC: H01P5/12

    CPC classification number: G01R23/02 ,  H01P3/16 ,  H01P3/18

    Abstract: High frequency interconnect structures, electronic assemblies that utilize high frequency interconnect structures, and methods of operating the same. The high frequency interconnect structures include a plurality of dielectric waveguides and are configured to communicatively connect a plurality of transmitters with a plurality of receivers and to convey a plurality of signals therebetween. The plurality of signals may include a plurality of electromagnetic waves and may have a frequency of at least 200 GHz. The high frequency interconnect structures further may be configured to decrease a potential for crosstalk between a first signal that is conveyed by a first dielectric waveguide of the plurality of dielectric waveguides and a second signal that is conveyed by a second dielectric waveguide of the plurality of dielectric waveguides, such as through control of a passband of the first dielectric waveguide relative to the second dielectric waveguide and/or the use of a crosstalk mitigation structure.

    Abstract translation: 高频互连结构，利用高频互连结构的电子组件及其操作方法。 高频互连结构包括多个介质波导，并且被配置为将多个发射器与多个接收器通信连接并且在其间传送多个信号。 多个信号可以包括多个电磁波，并且可以具有至少200GHz的频率。 高频互连结构还可以被配置为降低由多个介质波导的第一介电波导传送的第一信号与由多个介质波导的第二介质波导传送的第二信号之间的串扰的电位 波导，例如通过控制第一介电波导相对于第二介质波导的通带和/或使用串扰减轻结构。

    4.
    发明专利
    未知

    公开(公告)号：DE19614506A1

    公开(公告)日：1996-10-17

    申请号：DE19614506

    申请日：1996-04-12

    Applicant: CASCADE MICROTECH INC

    Inventor： STRID ERIC W ,  SCHAPPACHER JERRY B ,  CARLTON DALE E ,  GLEASON K REED

    IPC: G01R31/26 ,  G01R1/00 ,  G01R1/067 ,  G01R1/073 ,  G01R31/02 ,  G01R31/28 ,  G01R35/00 ,  H01L21/66

    Abstract: An interconnect assembly for evaluating a probe measurement network includes a base, respective inner and outer probing areas in mutually coplanar relationship on the upper face of the base, a reference junction, and a high-frequency transmission structure connecting the probing areas and the reference junction so that high-frequency signals can be uniformly transferred therebetween. A preferred method for evaluating the signal channels of the network includes connecting a reference unit to the reference junction and successively positioning each device-probing end that corresponds to a signal channel of interest on the inner probing area.

    6.
    发明专利
    未知

    公开(公告)号：DE19614506B4

    公开(公告)日：2006-01-12

    申请号：DE19614506

    申请日：1996-04-12

    Applicant: CASCADE MICROTECH INC

    Inventor： STRID ERIC W ,  SCHAPPACHER JERRY B ,  CARLTON DALE E ,  GLEASON K REED

    IPC: G01R31/26 ,  G01R1/00 ,  G01R1/067 ,  G01R1/073 ,  G01R31/02 ,  G01R31/28 ,  G01R35/00 ,  H01L21/66

    Abstract: An interconnect assembly for evaluating a probe measurement network includes a base, respective inner and outer probing areas in mutually coplanar relationship on the upper face of the base, a reference junction, and a high-frequency transmission structure connecting the probing areas and the reference junction so that high-frequency signals can be uniformly transferred therebetween. A preferred method for evaluating the signal channels of the network includes connecting a reference unit to the reference junction and successively positioning each device-probing end that corresponds to a signal channel of interest on the inner probing area.

    WAFER PROBE
    7.
    发明专利
    WAFER PROBE 未知

    公开(公告)号：CA1271848A

    公开(公告)日：1990-07-17

    申请号：CA551319

    申请日：1987-11-09

    Applicant: CASCADE MICROTECH INC

    Inventor： STRID ERIC W

    IPC: G01R1/073 ,  H01L21/66

    Abstract: A wafer probe for testing semiconductor devices brings low impedance connections closely adjacent device bonding pads for bypassing power supply voltages.

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