公开(公告)号：JPH09186328A

公开(公告)日：1997-07-15

申请号：JP35056296

申请日：1996-12-27

Applicant: SGS THOMSON MICROELECTRONICS ,  CONS RIC MICROELETTRONICA

Inventor： ANTONIO GURIMARUDEI ,  ANTONIINO SHIRATSUCHI ,  FUERUCHIO FURISHINA ,  JIYUSETSUPE FUERURA

IPC: H01L21/336 ,  H01L23/482 ,  H01L29/06 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a MOS gate power device having low gate resistance, improved dynamic performance and high frequency performance. SOLUTION: A MOS gate power device contains a P-type web structure formed on an N semiconductor layer 2. The P-type web structure contains a P-type annular frame part 6 arranged on the N semiconductor layer 2 surrounding a plurality of P-type body parts 9, and a P-type long and narrow strip 6 extended to the direction almost crossing at right angle with the P-type body parts 9. The end part of the P-type long and narrow strip 6 is incorporated with the P-type annular frame part.

公开(公告)号：JPH08293606A

公开(公告)日：1996-11-05

申请号：JP3651496

申请日：1996-02-23

Applicant: CONS RIC MICROELETTRONICA

Inventor： ANTONIO GURIMARUDEI ,  ANTONIINO SHIIRATSUCHI

IPC: H01L21/336 ,  H01L23/482 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/739 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To improve a dynamic characteristic without sacrificing a normal state characteristic by interdigitating elongated stripes, plural source metal fingers which are brought into contact with an elongated source region and conductive gate fingers. SOLUTION: An elongated doped semiconductor stripes 11 of a first conductivity type formed in a semiconductor layer of a second conductivity type is provided. The elongated stripes 11 contain the elongated source regions of the first conductivity type and they are provided with the first conductive annular doped semiconductor regions 8 which are formed in the semiconductor layer, surround the elongated stripes 11 and are merged with the stripes. Furthermore, insulating gate stripes 16 extending on the semiconductor layer between the adjacent elongated stripes 11, conductive gate fingers 4 which extend on the insulating gate stripes 16 and which are electrically connected with the stripes and source metal fingers 7 which are brought into contact with the long stripes 11 and the elongated source regions 15 are provided. Thus, the fingers 7 and 4 are interdigitated.