公开(公告)号：JPH09186328A

公开(公告)日：1997-07-15

申请号：JP35056296

申请日：1996-12-27

Applicant: SGS THOMSON MICROELECTRONICS ,  CONS RIC MICROELETTRONICA

Inventor： ANTONIO GURIMARUDEI ,  ANTONIINO SHIRATSUCHI ,  FUERUCHIO FURISHINA ,  JIYUSETSUPE FUERURA

IPC: H01L21/336 ,  H01L23/482 ,  H01L29/06 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a MOS gate power device having low gate resistance, improved dynamic performance and high frequency performance. SOLUTION: A MOS gate power device contains a P-type web structure formed on an N semiconductor layer 2. The P-type web structure contains a P-type annular frame part 6 arranged on the N semiconductor layer 2 surrounding a plurality of P-type body parts 9, and a P-type long and narrow strip 6 extended to the direction almost crossing at right angle with the P-type body parts 9. The end part of the P-type long and narrow strip 6 is incorporated with the P-type annular frame part.