公开(公告)号：US20190341524A1

公开(公告)日：2019-11-07

申请号：US16513264

申请日：2019-07-16

Applicant: EPISTAR CORPORATION

Inventor： Chia-Ming LIU ,  Chang-Hua HSIEH ,  Yung-Chung PAN ,  Chang-Yu TSAI ,  Ching-Chung HU ,  Ming-Pao CHEN ,  Chi SHEN ,  Wei-Chieh LIEN

IPC: H01L33/26 ,  H01L33/20 ,  H01L33/14

Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region, wherein the active region comprises multiple alternating well layers and barrier layers, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies at a distance of between 15 nm and 60 nm from the upper surface of the active region.

公开(公告)号：US20230144521A1

公开(公告)日：2023-05-11

申请号：US18094185

申请日：2023-01-06

Applicant: EPISTAR CORPORATION

Inventor： Chia-Ming LIU ,  Chang-Hua HSIEH ,  Yung-Chung PAN ,  Chang-Yu TSAI ,  Ching-Chung HU ,  Ming-Pao CHEN ,  Chi SHEN ,  Wei-Chieh LIEN

IPC: H01L33/26 ,  H01L33/14 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32

CPC classification number: H01L33/26 ,  H01L33/145 ,  H01L33/06 ,  H01L33/305 ,  H01L33/325

Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region comprises multiple alternating well layers and first barrier layers, wherein each of the first barrier layers has a band gap, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; a first electron blocking layer between the second semiconductor structure and the active region, wherein the first electron blocking layer having a band gap greater than the band gap of one of the first barrier layers; a first aluminum-containing layer between the first electron blocking layer and the active region, wherein the first aluminum-containing layer has a first thickness and a band gap greater than the band gap of the first electron blocking layer; and a second aluminum-containing layer on a side of the first electron blocking layer opposite to the first aluminum-containing layer, wherein the second aluminum-containing layer has a second thickness and a band gap greater than the band gap of the first electron blocking layer; and wherein a ratio of the second thickness of the second aluminum-containing layer to the first thickness of the first aluminum-containing layer is between 0.8 and 1.2.

公开(公告)号：US20210226094A1

公开(公告)日：2021-07-22

申请号：US17221563

申请日：2021-04-02

Applicant: EPISTAR CORPORATION

Inventor： Chia-Ming LIU ,  Chang-Hua HSIEH ,  Yung-Chung PAN ,  Chang-Yu TSAI ,  Ching-Chung HU ,  Ming-Pao CHEN ,  Chi SHEN ,  Wei-Chieh LIEN

IPC: H01L33/26 ,  H01L33/14 ,  H01L33/20 ,  H01L33/06 ,  H01L33/04 ,  H01L33/30 ,  H01L33/32

Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region, wherein the active region comprises multiple alternating well layers and barrier layers, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies at a distance of between 15 nm and 60 nm from the upper surface of the active region.

公开(公告)号：US20230023705A1

公开(公告)日：2023-01-26

申请号：US17871103

申请日：2022-07-22

Applicant: EPISTAR CORPORATION

Inventor： Chang-Hua HSIEH ,  Chia-Ming LIU ,  Chi-Hsiang YEH ,  Shuo-Wei CHEN ,  Yen-Kai YANG

IPC: H01L33/32

Abstract: A semiconductor device, includes: a first conductive type semiconductor region including a first semiconductor structure, wherein the first semiconductor structure includes one or more pairs of stack, the one or more pairs of stack respectively includes a first layer and a second layer, the first layer includes AlxGa1-xN, the second layer includes AlyGa1-yN, wherein 0≤x

公开(公告)号：US20170092806A1

公开(公告)日：2017-03-30

申请号：US15373073

申请日：2016-12-08

Applicant: EPISTAR CORPORATION

Inventor： Wen Hsiang LIN ,  Chang-Hua HSIEH

IPC: H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/06 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32

Abstract: A nitride-based semiconductor light-emitting device comprises a light-emitting stack comprising a first semiconductor structure having a first conductivity, a second semiconductor structure having a second conductivity, and an active region between the first semiconductor structure and the second semiconductor structure; a semiconductor buffer structure formed under the first semiconductor structure; an un-doped AlGaN layer formed between the first semiconductor structure and the semiconductor buffer structure; and a substrate under the semiconductor buffer structure, wherein the semiconductor buffer structure comprises an un-doped first layer under the un-doped AlGaN layer, and an un-doped second layer between the un-doped first layer and the substrate, and wherein the thickness of the un-doped first layer is thicker than that of the un-doped second layer and the un-doped AlGaN layer.

公开(公告)号：US20140124734A1

公开(公告)日：2014-05-08

申请号：US14154149

申请日：2014-01-13

Applicant: EPISTAR CORPORATION

Inventor： Wen Hsiang LIN ,  Chang-Hua HSIEH

IPC: H01L33/06

CPC classification number: H01L33/06 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32

Abstract: A nitride-based semiconductor light-emitting device includes: a light-emitting stack comprising a first semiconductor structure having a first conductivity, a second semiconductor structure having a second conductivity, and an active region interposed the first semiconductor structure and the second semiconductor structure; a semiconductor buffer structure formed under the first semiconductor structure; and an un-doped or unintentionally-doped AlGaN based layer formed between the first semiconductor structure and the semiconductor buffer structure.

Abstract translation: 一种氮化物系半导体发光装置，具备：具有第一导电性的第一半导体结构，具有第二导电性的第二半导体结构的发光叠层和插入所述第一半导体结构和所述第二半导体结构的有源区; 形成在所述第一半导体结构下的半导体缓冲结构; 以及形成在第一半导体结构和半导体缓冲结构之间的未掺杂或无意掺杂的AlGaN基层。