公开(公告)号：US20200243714A1

公开(公告)日：2020-07-30

申请号：US16749884

申请日：2020-01-22

Applicant: EPISTAR CORPORATION

Inventor： Li-Ming CHANG ,  Tzung-Shiun YEH ,  Chien-Fu SHEN ,  Wen-Hsiang LIN ,  Pei-Chi CHIANG ,  Yi-Wen KU

IPC: H01L33/10 ,  F21V8/00 ,  H01L33/00 ,  H01L33/20

Abstract: A light-emitting device, includes: a substrate, including a base with a main surface; and a plurality of protrusions on the main surface, wherein the protrusion and the base include different materials; and a semiconductor stack on the main surface, including a side wall, and wherein an included angle between the side wall and the main surface is an obtuse angle; wherein the main surface includes a peripheral area surrounding the semiconductor stack, and the peripheral area is devoid of the protrusion formed thereon.

公开(公告)号：US20140084324A1

公开(公告)日：2014-03-27

申请号：US14093924

申请日：2013-12-02

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Yu-Chen YANG ,  Li-Ping JOU ,  Hui-Chun YEH ,  Yi-Wen KU

IPC: H01L33/20 ,  H01L33/60

CPC classification number: H01L33/08 ,  H01L33/0012 ,  H01L33/20 ,  H01L33/30 ,  H01L33/38 ,  H01L33/382 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62

Abstract: A light-emitting device of an embodiment of the present application comprises a semiconductor layer sequence provided with a first main side, a second main side, and an active layer; a beveled trench formed in the semiconductor layer sequence, having a top end close to the second main side, a bottom end, and an inner sidewall connecting the top end and the bottom end. In the embodiment, the inner sidewall is an inclined surface. The light-emitting device further comprises a dielectric layer disposed on the inner sidewall of the beveled trench and the second main side; a first metal layer formed on the dielectric layer; a carrier substrate; and a first connection layer connecting the carrier substrate and the semiconductor layer sequence.

Abstract translation: 本申请的实施例的发光装置包括设置有第一主侧，第二主侧和有源层的半导体层序列; 形成在半导体层序列中的倾斜沟槽，具有靠近第二主侧的顶端，底端以及连接顶端和底端的内侧壁。 在该实施例中，内侧壁是倾斜表面。 发光装置还包括设置在斜面沟槽和第二主侧的内侧壁上的电介质层; 形成在所述电介质层上的第一金属层; 载体基材; 以及连接载体衬底和半导体层序列的第一连接层。

公开(公告)号：US20190237624A1

公开(公告)日：2019-08-01

申请号：US16382873

申请日：2019-04-12

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Yu-Chen YANG ,  Li-Ping JOU ,  Hui-Chun YEH ,  Yi-Wen KU

IPC: H01L33/38 ,  H01L33/60 ,  H01L33/46 ,  H01L33/62 ,  H01L33/30 ,  H01L33/08 ,  H01L33/20

CPC classification number: H01L33/38 ,  H01L33/0012 ,  H01L33/08 ,  H01L33/20 ,  H01L33/30 ,  H01L33/382 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62

Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.

公开(公告)号：US20170012167A1

公开(公告)日：2017-01-12

申请号：US15273439

申请日：2016-09-22

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Yu-Chen YANG ,  Li-Ping JOU ,  Hui-Chun YEH ,  Yi-Wen KU

IPC: H01L33/08 ,  H01L33/62 ,  H01L33/38 ,  H01L33/20 ,  H01L33/46

CPC classification number: H01L33/08 ,  H01L33/0012 ,  H01L33/20 ,  H01L33/30 ,  H01L33/38 ,  H01L33/382 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62

Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.

Abstract translation: 发光装置包括半导体层序列，其包括具有第一导电性的第一半导体层，具有第二导电性的第二半导体层和介于第一半导体层和第二半导体层之间的有源层; 形成在半导体层序列中的多个斜面沟槽; 分别形成在所述多个倾斜沟槽中的多个突出结构; 形成在所述第二半导体层上的电介质层和所述多个斜面沟槽的内侧壁; 插入在所述半导体层序列和所述电介质层之间的反射层; 以及沿着所述多个倾斜沟槽的内侧壁形成的金属层，其中所述电介质层，所述反射层和所述金属层重叠，所述多个突出结构和所述反射层不重叠。

公开(公告)号：US20220173272A1

公开(公告)日：2022-06-02

申请号：US17674690

申请日：2022-02-17

Applicant: EPISTAR CORPORATION

Inventor： Li-Ming CHANG ,  Tzung-Shiun YEH ,  Chien-Fu SHEN ,  Wen-Hsiang LIN ,  Pei-Chi CHIANG ,  Yi-Wen KU

IPC: H01L33/10 ,  F21V8/00 ,  H01L33/00 ,  H01L33/20

Abstract: A light-emitting package, includes: a housing including an opening; a lead frame covered by the housing; a light-emitting device, mounted in the opening and electrically connected to the lead frame, the light-emitting device including: a substrate including: a base with a main surface; and a plurality of protrusions on the main surface, wherein the protrusion and the base include different materials; a semiconductor stack on the main surface, the semiconductor stack including a side wall, and wherein an included angle between the side wall and the main surface is an obtuse angle; wherein the main surface includes a peripheral area not covered by the semiconductor stack, and the peripheral area is devoid of the protrusion formed thereon; and a filling material filling in the opening and covering the light-emitting device.

公开(公告)号：US20180108807A1

公开(公告)日：2018-04-19

申请号：US15846773

申请日：2017-12-19

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Yu-Chen YANG ,  Li-Ping JOU ,  Hui-Chun YEH ,  Yi-Wen KU

IPC: H01L33/08 ,  H01L33/62 ,  H01L33/46

CPC classification number: H01L33/38 ,  H01L33/0012 ,  H01L33/08 ,  H01L33/20 ,  H01L33/30 ,  H01L33/382 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62

Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.

公开(公告)号：US20150236208A1

公开(公告)日：2015-08-20

申请号：US14705453

申请日：2015-05-06

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Yu-Chen YANG ,  Li-Ping JOU ,  Hui-Chun YEH ,  Yi-Wen KU

IPC: H01L33/38 ,  H01L33/30 ,  H01L33/60

CPC classification number: H01L33/08 ,  H01L33/0012 ,  H01L33/20 ,  H01L33/30 ,  H01L33/38 ,  H01L33/382 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62

Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of protruding structures; a plurality of beveled trenches in the semiconductor layer sequence and respectively accommodating the plurality of protruding structures; a dielectric layer on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches, wherein the dielectric layer comprises a surface perpendicular to a thickness direction of the semiconductor layer sequence; a metal layer formed along the inner sidewall of the plurality of beveled trenches and extending to the surface of the dielectric layer, wherein the metal layer is insulated from the second semiconductor layer by the dielectric layer; and a first electrode formed on the plurality of protruding structures.

Abstract translation: 发光装置包括半导体层序列，其包括具有第一导电性的第一半导体层，具有第二导电性的第二半导体层和介于第一半导体层和第二半导体层之间的有源层; 多个突出结构; 半导体层中的多个倾斜沟槽序列并分别容纳多个突起结构; 所述第二半导体层上的电介质层和所述多个倾斜沟槽的内侧壁，其中所述电介质层包括垂直于所述半导体层序列的厚度方向的表面; 沿着所述多个倾斜沟槽的内侧壁形成并延伸到所述电介质层的表面的金属层，其中所述金属层通过所述电介质层与所述第二半导体层绝缘; 以及形成在所述多个突出结构上的第一电极。