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公开(公告)号：WO2004064090A3
公开(公告)日：2004-09-10
申请号：PCT/US2004000021
申请日：2004-01-05
Applicant: HONEYWELL INT INC
Inventor： HORNING ROBERT D , SCULLARD TIMOTHY LOUIS , MCDONALD ROBINSON
CPC classification number: B81C1/00666 , B81C2201/0167 , Y10T74/12
Abstract: A method for controlling bow in wafers (50) which utilize doped layers is described. The method includes depositing a silicon-germanium layer (52) onto a substrate (14), depositing an undoped buffer layer (56) onto the silicon-germanium layer, and depositing a silicon-boron layer (58) onto the undoped layer.
Abstract translation: 描述了一种用于控制利用掺杂层的晶片（50）中的弓的方法。 该方法包括在衬底（14）上沉积硅 - 锗层（52），在硅 - 锗层上沉积未掺杂的缓冲层（56），并且在未掺杂的层上沉积硅 - 硼层（58）。
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公开(公告)号：CA2512699A1
公开(公告)日：2004-07-29
申请号：CA2512699
申请日：2004-01-05
Applicant: HONEYWELL INT INC
Inventor： SCULLARD TIMOTHY LOUIS , HORNING ROBERT D , MCDONALD ROBINSON
Abstract: A method for controlling bow in wafers (50) which utilize doped layers is described. The method includes depositing a silicon-germanium layer (52) ont o a substrate (14), depositing an undoped buffer layer (56) onto the silicon- germanium layer, and depositing a silicon-boron layer (58) onto the undoped layer.
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公开(公告)号：AU2004204858A1
公开(公告)日：2004-07-29
申请号：AU2004204858
申请日：2004-01-05
Applicant: HONEYWELL INT INC
Inventor： SCULLARD TIMOTHY LOUIS , MCDONALD ROBINSON , HORNING ROBERT D
Abstract: A method for controlling bow in wafers which utilize doped layers is described. The method includes depositing a silicon-germanium layer onto a substrate, depositing an undoped buffer layer onto the silicon-germanium layer, and depositing a silicon-boron layer onto the undoped layer.
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