公开(公告)号：DE2725096A1

公开(公告)日：1978-01-05

申请号：DE2725096

申请日：1977-06-03

Applicant: IBM

Inventor： ALPAUGH WARREN ALAN ,  MACUR GEORGE JOSEPH ,  VLASAK GARY PAUL

IPC: H05K3/18 ,  C04B41/88 ,  C23C18/16 ,  C23C18/28 ,  C23C18/31 ,  C23C18/34 ,  C23C18/40 ,  C23C3/02

Abstract: A three step seeding process with a hot water rinse and bake includes first contacting the surface of a substrate with a stannous chloride sensitizing solution, followed by a hot water rinse to remove any excess stannous chloride. Next, a palladium chloride activator is used to interact with the stannous compounds to form an adherent layer of metallic palladium particles. Thereafter, the surface is subjected to a palladium chloride/stannous chloride/HCL seeder bath which deposits a final catalytic layer on the surface and drilled through holes to facilitate the electroless plating of a metal of the substrate. A subsequent baking at a temperature between 105 DEG C and 120 DEG C sets the seeder on the substrate surface and in the through holes in the substrate.

公开(公告)号：DE3160591D1

公开(公告)日：1983-08-18

申请号：DE3160591

申请日：1981-04-28

Applicant: IBM

Inventor： ALPAUGH WARREN ALAN ,  MACUR GEORGE JOSEPH ,  SHARKNESS JAMES EDWARD

IPC: C02F1/58 ,  C02F1/32 ,  C02F1/62 ,  C02F1/70 ,  C02F1/72 ,  C02F1/74 ,  C02F1/78 ,  C02F9/00 ,  C23C18/16 ,  C23C3/00

公开(公告)号：DE3570701D1

公开(公告)日：1989-07-06

申请号：DE3570701

申请日：1985-03-07

Applicant: IBM

Inventor： ALPAUGH WARREN ALAN ,  AMELIO WILLIAM JOSEPH ,  MARKOVICH VOYA ,  SAMBUCETTI CARLOS JUAN

IPC: C23C18/40 ,  C23C18/52 ,  H05K3/18

Abstract: @ copper is plated onto a dielectric substrate by plating a first layer of copper onto the substrate from an electroless plating bath and plating a second layer of copper onto the first layer of copper from a second and different electroless plating bath. The first and second plating baths differ from each other in at least the cyanide content and oxygen content. The process reduces plating void defects and reduces nodule formation.

公开(公告)号：DE2964079D1

公开(公告)日：1982-12-30

申请号：DE2964079

申请日：1979-02-14

Applicant: IBM

Inventor： ALPAUGH WARREN ALAN ,  ZUCCONI THEODORE DANIEL

IPC: H05K3/18 ,  C23C18/30 ,  C23C18/31 ,  C23C18/40 ,  C23C3/02

Abstract: Copper is electrolessly deposited on a surface wherein the dissolved oxygen content is maintained between 2 and 4 ppm in the plating bath.