公开(公告)号：WO2011019562A2

公开(公告)日：2011-02-17

申请号：PCT/US2010044385

申请日：2010-08-04

Applicant: IBM ,  BOOTH ROGER A ,  CHENG KANGGUO ,  KOTHANDARAMAN CHANDRASEKHARAN

Inventor： BOOTH ROGER A ,  CHENG KANGGUO ,  KOTHANDARAMAN CHANDRASEKHARAN

IPC: H01L23/62 ,  H01L21/82

CPC classification number: H01L23/5252 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method forms an anti-fuse structure comprises a plurality of parallel conductive fins positioned on a substrate, each of the fins has a first end and a second end. A second electrical conductor is electrically connected to the second end of the fins. An insulator covers the first end of the fins and a first electrical conductor is positioned on the insulator. The first electrical conductor is electrically insulated from the first end of the fins by the insulator. The insulator is formed to a thickness sufficient to break down on the application of a predetermined voltage between the second electrical conductor and the first electrical conductor and thereby form an uninterrupted electrical connection between the second electrical conductor and the first electrical conductor through the fins.

Abstract translation: 一种形成抗熔丝结构的方法包括位于基板上的多个平行的导电翅片，每个翼片具有第一端和第二端。 第二电导体电连接到散热片的第二端。 绝缘体覆盖翅片的第一端并且第一电导体位于绝缘体上。 第一电导体通过绝缘体与散热片的第一端电绝缘。 绝缘体形成为足以在第二电导体和第一电导体之间施加预定电压时分解的厚度，从而通过翅片在第二电导体和第一电导体之间形成不间断的电连接。

公开(公告)号：DE112011100948T5

公开(公告)日：2013-01-24

申请号：DE112011100948

申请日：2011-03-31

Applicant: IBM

Inventor： BOOTH ROGER A ,  KANGGUO CHENG ,  PEI CHENGWEN ,  FURUKAWA TOSHIHARU

IPC: H01L27/06 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/12 ,  H01L29/78 ,  H01L29/94

Abstract: Eine integrierte Schaltung mit FinFETs (60a, b) und einem Metall-Isolator-Metall(MIM)-Fin-Kondensator (65) und Fertigungsverfahren werden offenbart. Das Verfahren beinhaltet das Bilden eines ersten FinFET (60a), der ein erstes Dielektrikum (25) und einen ersten Leiter (30) umfasst; das Bilden eines zweiten FinFET (60b), der ein zweites Dielektrikum (40) und einen zweiten Leiter (45) umfasst; und das Bilden eines Fin-Kondensators (65), der den ersten Leiter (25), das zweite Dielektrikum (40) und den zweiten Leiter (45) umfasst.

公开(公告)号：GB2494338B

公开(公告)日：2014-06-11

申请号：GB201221985

申请日：2011-03-31

Applicant: IBM

Inventor： BOOTH ROGER A ,  KANGGUO CHENG ,  PEI CHENGWEN ,  FURUKAWA TOSHIHARU

IPC: H01L27/06 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/12 ,  H01L29/78 ,  H01L29/94

Abstract: An integrated circuit having finFETs and a metal-insulator-metal (MIM) fin capacitor and methods of manufacture are disclosed. A method includes forming a first finFET comprising a first dielectric and a first conductor; forming a second finFET comprising a second dielectric and a second conductor; and forming a fin capacitor comprising the first conductor, the second dielectric, and the second conductor.

公开(公告)号：GB2494338A

公开(公告)日：2013-03-06

申请号：GB201221985

申请日：2011-03-31

Applicant: IBM

Inventor： BOOTH ROGER A ,  KANGGUO CHENG ,  PEI CHENGWEN ,  FURUKAWA TOSHIHARU

IPC: H01L27/06 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/12 ,  H01L29/78 ,  H01L29/94

Abstract: An integrated circuit having finFETs(60a,b) and a metal-insulator-metal (MIM) fin capacitor (65) and methods of manufacture are disclosed. A method includes forming a first finFET (60a) comprising a first dielectric (25) and a first conductor (30); forming a second finFET (60b) comprising a second dielectric (40) and a second conductor (45); and forming a fin capacitor (65) comprising the first conductor (25), the second dielectric (40), and the second conductor (45).