公开(公告)号：GB2484634A

公开(公告)日：2012-04-18

申请号：GB201202057

申请日：2010-08-04

Applicant: IBM

Inventor： BOOTH ROGER A JR ,  CHENG KANGGUO ,  KOTHANDARAMAN CHANDRASEKHARAN

IPC: H01L23/525 ,  H01L21/82 ,  H01L23/62

Abstract: A method forms an anti-fuse structure comprises a plurality of parallel conductive fins positioned on a substrate, each of the fins has a first end and a second end. A second electrical conductor is electrically connected to the second end of the fins. An insulator covers the first end of the fins and a first electrical conductor is positioned on the insulator. The first electrical conductor is electrically insulated from the first end of the fins by the insulator. The insulator is formed to a thickness sufficient to break down on the application of a predetermined voltage between the second electrical conductor and the first electrical conductor and thereby form an uninterrupted electrical connection between the second electrical conductor and the first electrical conductor through the fins.

公开(公告)号：GB2484634B

公开(公告)日：2014-02-05

申请号：GB201202057

申请日：2010-08-04

Applicant: IBM

Inventor： BOOTH ROGER A JR ,  CHENG KANGGUO ,  KOTHANDARAMAN CHANDRASEKHARAN

IPC: H01L23/525 ,  H01L21/82 ,  H01L23/62

Abstract: A method forms an anti-fuse structure comprises a plurality of parallel conductive fins positioned on a substrate, each of the fins has a first end and a second end. A second electrical conductor is electrically connected to the second end of the fins. An insulator covers the first end of the fins and a first electrical conductor is positioned on the insulator. The first electrical conductor is electrically insulated from the first end of the fins by the insulator. The insulator is formed to a thickness sufficient to break down on the application of a predetermined voltage between the second electrical conductor and the first electrical conductor and thereby form an uninterrupted electrical connection between the second electrical conductor and the first electrical conductor through the fins.

公开(公告)号：GB2485693B

公开(公告)日：2014-05-28

申请号：GB201201195

申请日：2010-08-26

Applicant: IBM

Inventor： BOOTH ROGER A JR ,  COOLBAUGH DOUGLAS D ,  ESHUN EBENEZER E ,  HE ZHONG-XIANG

IPC: H01L23/522 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/8242 ,  H01L27/02 ,  H01L27/108

Abstract: An interdigitated structure may include at least one first metal line, at least one second metal line parallel to the at least one first metal line and separated from the at least one first metal line, and a third metal line contacting ends of the at least one first metal line and separated from the at least one second metal line. The at least one first metal line does not vertically contact any metal via and at least one second metal line may vertically contact at least one metal via. Multiple layers of interdigitated structure may be vertically stacked. Alternately, an interdigitated structure may include a plurality of first metal lines and a plurality of second metal lines, each metal line not vertically contacting any metal via. Multiple instances of interdigitated structure may be laterally replicated and adjoined, with or without rotation, and/or vertically stacked to form a capacitor.

公开(公告)号：GB2485693A

公开(公告)日：2012-05-23

申请号：GB201201195

申请日：2010-08-26

Applicant: IBM

Inventor： BOOTH ROGER A JR ,  COOLBAUGH DOUGLAS D ,  ESHUN EBENEZER E ,  HE ZHONG-XIANG

IPC: H01L23/522 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/8242 ,  H01L27/02 ,  H01L27/108

Abstract: An interdigitated structure may include at least one first metal line, at least one second metal line parallel to the at least one first metal line and separated from the at least one first metal line, and a third metal line contacting ends of the at least one first metal line and separated from the at least one second metal line. The at least one first metal line does not vertically contact any metal via and at least one second metal line may vertically contact at least one metal via. Multiple layers of interdigitated structure may be vertically stacked. Alternately, an interdigitated structure may include a plurality of first metal lines and a plurality of second metal lines, each metal line not vertically contacting any metal via. Multiple instances of interdigitated structure may be laterally replicated and adjoined, with or without rotation, and/or vertically stacked to form a capacitor.