公开(公告)号：US3796548A

公开(公告)日：1974-03-12

申请号：US3796548D

申请日：1971-09-13

Applicant: IBM

Inventor： BOSS D ,  HULL E ,  SCILLA S

IPC: C30B11/00 ,  C30B11/06 ,  C30B11/14 ,  C30B29/40 ,  H01L21/208 ,  B01J17/06

CPC classification number: C30B11/14 ,  C30B11/003 ,  Y10S117/90 ,  Y10T117/1092

Abstract: An apparatus useful for growing single crystal semiconductor material comprising a liquid melt section coaxially integrated with a seed cavity and having an annularly disposed integral thermal reflector means and a radiant heat dissipating member horizontally disposed and in a post linear direction from the seed cavity.

Abstract translation: 一种用于生长单晶半导体材料的装置，包括与种子腔同轴一体化的液体熔融部分，并且具有环形布置的整体式热反射器装置和从种子腔水平放置并沿着直线方向的辐射散热构件。

公开(公告)号：US3765960A

公开(公告)日：1973-10-16

申请号：US3765960D

申请日：1970-11-02

Applicant: IBM

Inventor： LYONS V ,  POGGE H ,  BOSS D ,  KEMLAGE B

IPC: C30B25/02 ,  H01L21/00 ,  H01L21/205 ,  H01L21/22 ,  H01L21/74 ,  H01L7/36 ,  C23C13/02

CPC classification number: C30B29/06 ,  C30B25/02 ,  C30B29/08 ,  H01L21/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2205 ,  H01L21/74 ,  Y10S148/007 ,  Y10S148/037 ,  Y10S438/916

Abstract: Autodoping is minimized during the growth of an epitaxial layer on a semiconductor substrate by contacting the substrate with a gaseous reaction mixture at a low pressure, substantially below atmospheric to deposit at least the initial capping layer. The reaction mixture contains a relatively minor portion of a semiconductor compound along with a carrier gas. Subsequently, a second gaseous reaction mixture containing a greater portion of a compound of a semiconductor material may be used to complete the deposition of the epitaxial layer. This is done merely to reduce the total growth cycle.

Abstract translation: 在半导体衬底上外延层的生长过程中，通过在基本上低于大气压的低压下将衬底与气态反应混合物接触，使自掺杂最小化，从而沉积至少初始的覆盖层。