公开(公告)号：DE3279966D1

公开(公告)日：1989-11-02

申请号：DE3279966

申请日：1982-12-07

Applicant: IBM

Inventor： CHU SHAO-FU ,  HO ALLEN PANG-I ,  HORNG CHENG TZONG ,  KEMLAGE BERNARD MICHAEL

IPC: H01L21/76 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/762

Abstract: A method of forming a wide deep dielectric filled isolation trench in the surface of a silicon semiconductor substrate by forming a wide plug of chemical vapor deposited silicon dioxide in the trench, filling the remaining unfilled trench portions by chemical vapor depositing a layer of silicon dioxide over the substrate and etching back this layer. The method produces chemically pure, planar wide deep dielectric filled isolation trenches and may also be used to simultaneously produce narrow deep dielectric filled isolation trenches.