公开(公告)号：DE3071381D1

公开(公告)日：1986-03-13

申请号：DE3071381

申请日：1980-06-03

Applicant: IBM

Inventor： HORNG CHENG TZONG ,  SCHWENKER ROBERT OTTO

IPC: H01L21/76 ,  H01L21/033 ,  H01L21/263 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/316 ,  H01L21/762 ,  H01L21/768 ,  H01L21/90 ,  H01L23/52

Abstract: 1. Method of making wide, deep recessed isolation trenches in a semiconductor substrate, where a) narrow, shallow trenches (16) are formed in the surface of the semiconductor substrate, said trenches having vertical sidewalls (18) and being separated from each other by profiles with a mesa cross section ; b) the bottom and sidewall surfaces (20, 18) of the trenches (16) formed in the semiconductor substrate, as well as the surfaces of the mesa profile are coated with a masking material (22) ; c) the masking material is removed from the bottom surfaces (20) of the trenches (16) and from the covering surfaces of the profiles by means of reactive ion etching ; d) the semiconductor substrate is exposed to a reactive ion etching, the masking material (24) remaining at the sidewalls of the trenches being used as an etching mask in order to produce a series of deep trenches separated from each other by means of narrow mesa sidewalls (28) ; e) the width of the sidewalls (28) is determined by the layer thickness of the masking material (22) ; and f) the material of the sidewalls is completely thermally oxidized.

公开(公告)号：DE3172466D1

公开(公告)日：1985-11-07

申请号：DE3172466

申请日：1981-01-23

Applicant: IBM

Inventor： CAVALIERE JOSEPH RICHARD ,  HORNG CHENG TZONG ,  KONIAN RICHARD ROBERT ,  RUPPRECHT HANS STEPHAN ,  SCHWENKER ROBERT OTTO

IPC: H01L21/8222 ,  H01L21/033 ,  H01L21/285 ,  H01L21/331 ,  H01L21/762 ,  H01L27/06 ,  H01L29/73 ,  H01L29/732 ,  H01L29/72 ,  H01L21/76

公开(公告)号：HK202396A

公开(公告)日：1996-11-15

申请号：HK202396

申请日：1996-11-07

Applicant: IBM

Inventor： GRILL ALFRED ,  HORNG CHENG TZONG ,  MEYERSON BERNARD STEELE ,  PATEL VISHNUBHAI VITTHALBHAI ,  RUSSAK MICHAEL ALLEN ,  CHANG HENRY CHINLIN ,  CHEN MAO-MIN ,  SCHWENKER ROBERT OTTO

IPC: G11B5/31 ,  G11B5/60

公开(公告)号：DE3070813D1

公开(公告)日：1985-08-01

申请号：DE3070813

申请日：1980-10-15

Applicant: IBM

Inventor： HORNG CHENG TZONG ,  POPONIAK MICHAEL ROBERT ,  RUPPRECHT HANS STEPHAN ,  SCHWENKER ROBERT OTTO

IPC: H01L21/76 ,  H01L21/331 ,  H01L21/74 ,  H01L21/762 ,  H01L29/08 ,  H01L29/10 ,  H01L29/73 ,  H01L29/732 ,  H01L29/72 ,  H01L29/62 ,  H01L21/82

Abstract: A method for device fabrication disclosed is a self-aligned process. The device formed has small vertical as well as horizontal dimensions. The device region is surrounded by a deep oxide trench which has nearly vertical sidewalls. The deep trench extends from the epitaxial silicon surface through N+ subcollector region into the P substrate. The width of the deep trench is about 2 mu m to 3.0 mu m. A shallow oxide trench extending from the epitaxial silicon surface to the upper portion of the N+ subcollector separates the base and collector contact. The surface of the isolation regions and the silicon where the transistor is formed is coplanar. As shown in FIG. 1, the fabricated bipolar transistor has a mesa-type structure. The transistor base dimension is only slightly larger than the emitter. This small base area results in low collector-base capacitance which is a very important parameter in ultra-high performance integrated circuit devices. Contact to the transistor base in the disclosed structure is achieved by a thick heavily boron doped polysilicon layer which surrounds the emitter and makes lateral contact to the active base.

公开(公告)号：IT8021996D0

公开(公告)日：1980-05-13

申请号：IT2199680

申请日：1980-05-13

Applicant: IBM

Inventor： HORNG CHENG TZONG ,  SCHWENKER ROBERT OTTO

IPC: H01L21/76 ,  H01L21/033 ,  H01L21/263 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/316 ,  H01L21/762 ,  H01L21/768 ,  H01L

Abstract: 1. Method of making wide, deep recessed isolation trenches in a semiconductor substrate, where a) narrow, shallow trenches (16) are formed in the surface of the semiconductor substrate, said trenches having vertical sidewalls (18) and being separated from each other by profiles with a mesa cross section ; b) the bottom and sidewall surfaces (20, 18) of the trenches (16) formed in the semiconductor substrate, as well as the surfaces of the mesa profile are coated with a masking material (22) ; c) the masking material is removed from the bottom surfaces (20) of the trenches (16) and from the covering surfaces of the profiles by means of reactive ion etching ; d) the semiconductor substrate is exposed to a reactive ion etching, the masking material (24) remaining at the sidewalls of the trenches being used as an etching mask in order to produce a series of deep trenches separated from each other by means of narrow mesa sidewalls (28) ; e) the width of the sidewalls (28) is determined by the layer thickness of the masking material (22) ; and f) the material of the sidewalls is completely thermally oxidized.

公开(公告)号：SG46462A1

公开(公告)日：1998-02-20

申请号：SG1996004890

申请日：1991-12-09

Applicant: IBM

Inventor： CHANG HENRY CHINLIN ,  HORNG CHENG TZONG ,  CHEN MAO-MIN ,  SCHWENKER ROBERT OTTO

IPC: G11B5/31 ,  G11B5/60 ,  G11B5/187 ,  G11B21/21

Abstract: A magnetic head slider having a protective coating on the rails thereof, the protective coating comprising a thin adhesion layer, a thin layer of amorphous hydrogenated carbon, and a thin masking layer. The protective coating is deposited on the air bearing surface of the slider after the thin film magnetic heads are lapped to a chosen dimension, but before the pattern of rails is produced on the air bearing surface. The protective coating protects the magnetic head during the rail fabrication process and in usage in a magnetic recording system protects the magnetic head from wear and corrosion damage.

公开(公告)号：CA2055801C

公开(公告)日：1996-01-23

申请号：CA2055801

申请日：1991-11-19

Applicant: IBM

Inventor： GRILL ALFRED ,  HORNG CHENG TZONG ,  MEYERSON BERNARD STEELE ,  PATEL VISHNUBHAI VITTHALBHAI ,  RUSSAK MICHAEL ALLEN

IPC: G11B5/29 ,  G11B5/31 ,  G11B5/60 ,  G11B5/255

Abstract: A magnetic head slider having a protective coating on the rails thereof, the protective coating comprising a thin adhesion layer and a thin layer of amorphous hydrogenated carbon. The protective coating is deposited on the air bearing surface of the slider after the thin film magnetic heads are lapped to a chosen dimension, but before the pattern of rails is produced on the air bearing surface. The protective coating protects the magnetic head during the rail fabrication process and in usage in a magnetic recording system protects the magnetic head from wear and corrosion damage.

公开(公告)号：DE69113188D1

公开(公告)日：1995-10-26

申请号：DE69113188

申请日：1991-07-18

Applicant: IBM

Inventor： GALICKI ARKADI ,  HORNG CHENG TZONG ,  SCHWENKER ROBERT OTTO

IPC: C23C14/22 ,  C23C14/34 ,  H01J37/32 ,  C23C14/14 ,  H01J37/34

公开(公告)号：DE3174374D1

公开(公告)日：1986-05-22

申请号：DE3174374

申请日：1981-01-23

Applicant: IBM

Inventor： HORNG CHENG TZONG ,  MICHEL ALWIN EARL

IPC: H01L21/76 ,  H01L21/225 ,  H01L21/28 ,  H01L21/331 ,  H01L21/60 ,  H01L29/04 ,  H01L29/45 ,  H01L21/00 ,  H01L21/285

公开(公告)号：DE69117916T2

公开(公告)日：1996-10-02

申请号：DE69117916

申请日：1991-12-09

Applicant: IBM

Inventor： GRILL ALFRED ,  HORNG CHENG TZONG ,  MEYERSON BERNARD STEELE ,  PATEL VISHNUBHAI VITTHALBHAI ,  RUSSAK MICHAEL ALLEN ,  CHANG HENRY CHINLIN ,  CHEN MAO-MIN ,  SCHWENKER ROBERT OTTO

IPC: G11B5/31 ,  G11B5/60