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公开(公告)号：DE69534314T2
公开(公告)日：2006-04-20
申请号：DE69534314
申请日：1995-05-02
Applicant: IBM
Inventor： COFFEY KEVIN ROBERT , GURNEY BRUCE ALVIN , HEIM DAVID EUGENE , LEFAKIS HARALAMBOS , MAURI DANIELE , SPERIOSU VIRGIL SIMON , WILHOIT DENNIS RICHARD
Abstract: An SVMR sensor (60) having a self-pinned laminated layer (70) with at least two ferromagnetic films (72,74) antiferromagnetically coupled to one another across a thin antiferromagnetically (AF) coupling film (73). Since the two ferromagnetic films (72,74) in this laminated layer (70) have their magnetic moments aligned antiparallel, their two magnetic moments can be made to essentially cancel by making the two ferromagnetic films (72,74) of substantially the same thickness. The magnetic field energy generated by the signal field acting on this laminated layer (70) will be significantly less than the effective anisotropy energy of the laminated layer (70). As a result, the laminated layer (70) will not rotate in the presence of the signal field, but will be "self-pinned". A hard-bias or exchange bias layer in not needed, also eliminating the need for Ni-Mn and its associated high-temperature process.
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公开(公告)号：AT221999T
公开(公告)日：2002-08-15
申请号：AT94119895
申请日：1994-12-16
Applicant: IBM
Inventor： COFFEY KEVIN ROBERT , FONTANA ROBERT EDWARD , HOWARD JAMES KENT , HYLTON TODD LANIER , PARKER MICHAEL ANDREW , TSANG CHING HWA
Abstract: A magnetoresistive read sensor incorporates a multilayer sensing element formed of one or more magnetoresistive elements in a planar array, each magnetoresistive element having a multilayer structure of at least two ferromagnetic layers separated by a nonmagnetic layer. The ferromagnetic layers are coupled antiferromagnetically by magnetostatic coupling at opposing edges of the ferromagnetic layers. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point for linear response. The magnetoresistive sensing element is formed by alternatively depositing layers of ferromagnetic material and layers of nonmagnetic material on a substrate and then patterning the resulting structure using photolithographic techniques to provide a planar array of magnetoresistive elements. A conductive layer is deposited over the array filling in the spaces separating the magnetoresistive elements to provide electrical conductivity between the elements in the plane of the structure.
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公开(公告)号：DE69534314D1
公开(公告)日：2005-08-25
申请号：DE69534314
申请日：1995-05-02
Applicant: IBM
Inventor： COFFEY KEVIN ROBERT , GURNEY BRUCE ALVIN , HEIM DAVID EUGENE , LEFAKIS HARALAMBOS , MAURI DANIELE , SPERIOSU VIRGIL SIMON , WILHOIT DENNIS RICHARD
Abstract: An SVMR sensor (60) having a self-pinned laminated layer (70) with at least two ferromagnetic films (72,74) antiferromagnetically coupled to one another across a thin antiferromagnetically (AF) coupling film (73). Since the two ferromagnetic films (72,74) in this laminated layer (70) have their magnetic moments aligned antiparallel, their two magnetic moments can be made to essentially cancel by making the two ferromagnetic films (72,74) of substantially the same thickness. The magnetic field energy generated by the signal field acting on this laminated layer (70) will be significantly less than the effective anisotropy energy of the laminated layer (70). As a result, the laminated layer (70) will not rotate in the presence of the signal field, but will be "self-pinned". A hard-bias or exchange bias layer in not needed, also eliminating the need for Ni-Mn and its associated high-temperature process.
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公开(公告)号：SG30327A1
公开(公告)日：1996-06-01
申请号：SG1995000170
申请日：1995-03-27
Applicant: IBM
Inventor： GURNEY BRUCE ALVIN , MAURI DANIEL , HEIM DAVID EUGENE , WILHOIT DENNIS RICHARD , LEFAKIS HARALAMBOS , COFFEY KEVIN ROBERT , SPERIOSU VIRGIL SIMON
IPC: G11B5/39
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公开(公告)号：DE69431149T2
公开(公告)日：2003-05-28
申请号：DE69431149
申请日：1994-12-16
Applicant: IBM
Inventor： COFFEY KEVIN ROBERT , FONTANA ROBERT EDWARD , HOWARD JAMES KENT , HYLTON TODD LANIER , PARKER MICHAEL ANDREW , TSANG CHING HWA
Abstract: A magnetoresistive read sensor incorporates a multilayer sensing element formed of one or more magnetoresistive elements in a planar array, each magnetoresistive element having a multilayer structure of at least two ferromagnetic layers separated by a nonmagnetic layer. The ferromagnetic layers are coupled antiferromagnetically by magnetostatic coupling at opposing edges of the ferromagnetic layers. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point for linear response. The magnetoresistive sensing element is formed by alternatively depositing layers of ferromagnetic material and layers of nonmagnetic material on a substrate and then patterning the resulting structure using photolithographic techniques to provide a planar array of magnetoresistive elements. A conductive layer is deposited over the array filling in the spaces separating the magnetoresistive elements to provide electrical conductivity between the elements in the plane of the structure.
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Patent Agency Ranking
公开(公告)号：DE69431149D1
公开(公告)日：2002-09-12
申请号：DE69431149
申请日：1994-12-16
Applicant: IBM
Inventor： COFFEY KEVIN ROBERT , FONTANA ROBERT EDWARD , HOWARD JAMES KENT , HYLTON TODD LANIER , PARKER MICHAEL ANDREW , TSANG CHING HWA
Abstract: A magnetoresistive read sensor incorporates a multilayer sensing element formed of one or more magnetoresistive elements in a planar array, each magnetoresistive element having a multilayer structure of at least two ferromagnetic layers separated by a nonmagnetic layer. The ferromagnetic layers are coupled antiferromagnetically by magnetostatic coupling at opposing edges of the ferromagnetic layers. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point for linear response. The magnetoresistive sensing element is formed by alternatively depositing layers of ferromagnetic material and layers of nonmagnetic material on a substrate and then patterning the resulting structure using photolithographic techniques to provide a planar array of magnetoresistive elements. A conductive layer is deposited over the array filling in the spaces separating the magnetoresistive elements to provide electrical conductivity between the elements in the plane of the structure.
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公开(公告)号：DE69419202T2
公开(公告)日：2000-01-20
申请号：DE69419202
申请日：1994-04-07
Applicant: IBM
Inventor： COFFEY KEVIN ROBERT , HOWARD JAMES KENT , HYLTON TODD LANIER , PARKER MICHAEL ANDREW
IPC: G01R33/09 , G11B5/39 , H01F10/08 , H01F10/14 , H01F10/32 , H01L43/08 , H01L43/10 , G01R33/06 , H01F10/00
Abstract: A magnetoresistive read sensor incorporates a granular multilayer sensing element comprising a plurality of layers of generally flat particles of a ferromagnetic material embedded in a nonmagnetic electrically conductive material. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point. The ferromagnetic and the nonmagnetic materials are mutually immiscible, or may be miscible or partially miscible and processed in a manner to control interdiffusion. The magnetoresistive sensing element is formed by alternatively depositing layers of ferromagnetic material and layers of nonmagnetic conductive material on a substrate and then annealing the structure. During the annealing cycle, the layers of nonmagnetic material above and below the ferromagnetic layers penetrate at grain boundaries and break the continuity of the ferromagnetic layers to form layers or planes of ferromagnetic particles embedded in a matrix of nonmagnetic material.
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公开(公告)号：DE69419202D1
公开(公告)日：1999-07-29
申请号：DE69419202
申请日：1994-04-07
Applicant: IBM
Inventor： COFFEY KEVIN ROBERT , HOWARD JAMES KENT , HYLTON TODD LANIER , PARKER MICHAEL ANDREW
IPC: G01R33/09 , G11B5/39 , H01F10/08 , H01F10/14 , H01F10/32 , H01L43/08 , H01L43/10 , G01R33/06 , H01F10/00
Abstract: A magnetoresistive read sensor incorporates a granular multilayer sensing element comprising a plurality of layers of generally flat particles of a ferromagnetic material embedded in a nonmagnetic electrically conductive material. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistive sensing element at a desired non-signal point. The ferromagnetic and the nonmagnetic materials are mutually immiscible, or may be miscible or partially miscible and processed in a manner to control interdiffusion. The magnetoresistive sensing element is formed by alternatively depositing layers of ferromagnetic material and layers of nonmagnetic conductive material on a substrate and then annealing the structure. During the annealing cycle, the layers of nonmagnetic material above and below the ferromagnetic layers penetrate at grain boundaries and break the continuity of the ferromagnetic layers to form layers or planes of ferromagnetic particles embedded in a matrix of nonmagnetic material.
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公开(公告)号：IN190594B
公开(公告)日：2003-08-09
申请号：IN1430DE1994
申请日：1994-11-09
Applicant: IBM
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公开(公告)号：SG49605A1
公开(公告)日：1998-06-15
申请号：SG1996000761
申请日：1994-06-08
Applicant: IBM
Inventor： COFFEY KEVIN ROBERT , HOWARD JAMES KENT , HYLTON TODD LANIER , PARKER MICHAEL ANDREW
Abstract: A heterogeneous thin film structure (10) including a discontinuous layer (15) of ferromagnetic material deposited on an insulating substrate (13) and overcoated with a layer (17) of nonmagnetic electrically conductive material exhibits giant magnetoresistance in saturation fields on the order of 350 Oersteds. A layer of ferromagnetic material is deposited on a heated insulating substrate by evaporation techniques to form a layer of isolated ferromagnetic particles and overcoated with a nonmagnetic conductive material to form a plurality of ferromagnetic particles embedded in a nonmagnetic conductive matrix. As the ferromagnetic and nonmagnetic materials are deposited separately, it is not required that the two materials be immiscible and subsequent annealing is not required to induce phase separation.
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