公开(公告)号：US3796926A

公开(公告)日：1974-03-12

申请号：US3796926D

申请日：1971-03-29

Applicant: IBM

Inventor： LAIBOWITZ R ,  PARK K ,  COLE J ,  CUOMO J

IPC: H01L21/00 ,  H01L45/00 ,  H01L3/16

CPC classification number: H01L21/00 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1633

Abstract: A switchable device using a doped insulator having two stable resistance states which does not require application of a forming voltage when being fabricated. The insulator is, for example, a multivalent oxide of 100-2,500 A thickness, containing impurities which provide conduction centers. Examples of these impurites include Bi, Sb, As, P, Ti, W, in amounts 0.05-10 percent by weight (1018- 1021 impurities/cm.3). The insulator is contacted by two electrodes which can be metals, such as transition metals. A particularly good device is NbBi alloy - NbBixOy-Bi.

公开(公告)号：US3795977A

公开(公告)日：1974-03-12

申请号：US3795977D

申请日：1971-12-30

Applicant: IBM

Inventor： BERKENBLIT M ,  COLE J ,  PARK K ,  REISMAN A ,  HERRELL D ,  LIGHT T

IPC: G11C11/41 ,  G11C11/39 ,  G11C13/00 ,  H01C7/00 ,  H01C7/108 ,  H01L29/86 ,  H01L45/00 ,  B01J17/00

CPC classification number: G11C13/0007 ,  G11C11/39 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2213/31 ,  H01C7/108 ,  H01L27/2472 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1633 ,  Y10T29/413

Abstract: Methods for providing bistable resistors fabricated from insulators exhibiting a plurality of impedance states, an example of which is a niobium-niobium oxide device. These methods use thermal treatment and chemical reduction of amorphous metal oxides to form an active filament in each device. In one method consumable metal dots are located on the amorphous metal oxide and the oxide is then annealed in an inert gas, preferably having a small percentage of oxygen therein. This causes an oxidationreduction reaction in the oxide regions directly beneath the metal dots. In a second method, the metal oxide layer is covered with a protective insulating mask except in selected portions, and the exposed metal oxide portions are then annealed in a reducing gas atmosphere. In each method, the top electrodes are deposited on the selectively reduced portions of the metal oxide layer and then the devices are electrically formed using only a small voltage (2 or 3 volts).

Abstract translation: 提供由表现出多个阻抗状态的绝缘体制造的双稳态电阻器的方法，其实例是铌 - 氧化铌器件。 这些方法使用无定形金属氧化物的热处理和化学还原来在每个装置中形成活性丝。 在一种方法中，可消耗金属点位于无定形金属氧化物上，然后氧化物在惰性气体中退火，优选在其中具有小百分比的氧。 这导致在金属点正下方的氧化物区域发生氧化还原反应。 在第二种方法中，除了选定的部分之外，金属氧化物层被保护绝缘掩模覆盖，然后暴露的金属氧化物部分在还原气体气氛中退火。 在每种方法中，顶部电极沉积在金属氧化物层的选择性还原部分上，然后仅使用小的电压（2或3伏特）电气地形成器件。