公开(公告)号：US3816845A

公开(公告)日：1974-06-11

申请号：US18322571

申请日：1971-09-23

Applicant: IBM

Inventor： CUOMO J ,  LAIBOWITZ R ,  MAYADAS A ,  ROSENBERG R

IPC: H01L27/00 ,  H01L39/00 ,  H01L39/22 ,  H01L17/00

CPC classification number: H01L39/223 ,  H01L27/00 ,  H01L27/18 ,  H01L39/228 ,  Y10S505/874

Abstract: A tunneling device, or array of such devices, having at least one electrode which is a single crystal. Tunnel devices having two or more electrodes are shown, as are thin film Josephson devices having two single crystal electrodes. The electrodes of any device can be of the same or different material, and the crystallographic orientations of these electrodes can be the same or different. Although the tunnel barrier is usually an insulator, it can be other materials, or even a vacuum. In a particular embodiment, the barrier is an epitaxial layer. Both in-line and crossed-stripe geometries are used.

Abstract translation: 具有至少一个电极是单晶的隧道装置或这种装置的阵列。 示出了具有两个或更多个电极的隧道装置，以及具有两个单晶电极的薄膜约瑟夫逊装置。 任何器件的电极可以是相同或不同的材料，并且这些电极的晶体取向可以相同或不同。 虽然隧道屏障通常是绝缘体，但它可以是其他材料，甚至是真空。 在特定实施例中，势垒是外延层。 使用在线和横条纹几何形状。

公开(公告)号：US3813549A

公开(公告)日：1974-05-28

申请号：US31797372

申请日：1972-12-26

Applicant: IBM

Inventor： DI STEFANO T ,  LAIBOWITZ R ,  ROSENBERG R

IPC: G03G15/02 ,  H01T19/00 ,  H05F3/04

CPC classification number: G03G15/0291 ,  H05F3/04

Abstract: The present invention relates to electrodes used for charging electrophotographic image surfaces in copying machines. More particularly, the disclosure is directed to the negative corona discharge electrodes which produce a negative charge that is applied to the photoconductive surface exposed to the corona discharge. In the present invention, the electrode structure includes a combination of a wire of valve metal with a high resistivity coating spread uniformly over the surface of the wire. The valve metal, one example being tantalum, may serve as the electrode wire itself or may surround an inner wire such as stainless steel. By providing an electrode for corona discharge having a uniform high resistive coating, the plasma glow produced will spread uniformly along the length of the wire. By using a valve metal, which forms a hard oxide under the high resistivity coating, the electrode is self-healing in that if cracks or imperfections occur in the coating, the exposed valve metal will oxidize and fill in the cracks and imperfections.

Abstract translation: 本发明涉及用于在复印机中对电子照相图像表面进行充电的电极。 更具体地，本公开涉及产生施加到暴露于电晕放电的光电导表面的负电荷的负电晕放电电极。 在本发明中，电极结构包括在金属丝的表面均匀扩散的阀金属线与高电阻率涂层的组合。 阀金属，一个例子是钽，可以用作电极线本身，或者可以包围诸如不锈钢的内部线。 通过提供具有均匀的高电阻涂层的电晕放电用电极，产生的等离子体辉光将沿导线的长度均匀扩散。 通过使用在高电阻率涂层下形成硬质氧化物的阀金属，电极是自愈的，因为如果涂层中出现裂纹或缺陷，暴露的阀金属将氧化并填充裂纹和缺陷。

公开(公告)号：US3806430A

公开(公告)日：1974-04-23

申请号：US4667770

申请日：1970-06-16

Applicant: IBM

Inventor： LAIBOWITZ R ,  LEVI A ,  ROSENBERG R

IPC: C25D11/02 ,  C23B9/00

CPC classification number: C25D11/02

Abstract: A METHOD IS DISCLOSED FOR PRODUCING DEFECT-FREE ULTRATHIN ANODIC OXIDE FILMS OF LESS THAN APPROXIMATELY 50 A. THICKNESS. ILLUSTRATIVELY, A THIN INSULATING FILM IS FORMED ON A NIOBIUM SUBSTRATE. A RESIDUALL OXIDE HAVING A THICKNESS OF ABOUT 30 A. IS NORMALLY PRESENT ON THE NIOBIUM SUBSTRATE. THE RESIDUAL OXIDE FILM IS REMOVED PRIOR TO ANODIZING, LEAVING MORE UNIFORM NIOBIUM SUBSTRATE. BY ANODIZING UNDER CONTROLLED CONDITIONS ANY DESIRED OXIDE DIMENSION LESS THAN APPROXIMATELY 50 A. MAY BE ACHIEVED BY THE PRACTICE OF THIS DISCLOSURE. THE METHOD COMPRISES ANODIZING THE NIOBIUM SUBSTRATE IN A SUITABLE ELECTROLYTE WITH AN APPLIED POTENTIAL UP TO APPOXIMATELY 1 VOLT, AND SUBSEQUENTLY REMOVING THE RESULTANT OXIDE BY ETCHING WITH A SUITABLE ETCHANT, E.G., HF, AND HF+HNO3, THE ANODIZING-ETCHING STEPS ARE PREFERABLY REPEATED TO REMOVE SURFACE CAVITIES AND GROWTHS FOR OBTAINING A SURFACE ON THE NIOBIUM SUBSTRATE WITH DESIRED UNIFORMITY. ILLUSTRATIVELY, THE FINAL ANODIZATION OF THE NIOBIUM SURFACE IS ACHIEVED BY CONNECTING THE TWO ELECTRODES OF THE ELECTROLYTIC CELL (THE NIOBIUM SURFACE AND THE CATHODE) THROUGH A CONSTANT CURRENT SOURCE TO ACHIEVE THE DESIRED FINAL THICKNESS OF THE ANODIC FILM. ALTERNATIVELY, THE ELECTRODES MAY BE CONNECTED TO EACH OTHER THROUGH A RESISTOR FOR CONTROLLING THE RATE OF ANODIC FILM GROWTH.

公开(公告)号：US3796926A

公开(公告)日：1974-03-12

申请号：US3796926D

申请日：1971-03-29

Applicant: IBM

Inventor： LAIBOWITZ R ,  PARK K ,  COLE J ,  CUOMO J

IPC: H01L21/00 ,  H01L45/00 ,  H01L3/16

CPC classification number: H01L21/00 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1633

Abstract: A switchable device using a doped insulator having two stable resistance states which does not require application of a forming voltage when being fabricated. The insulator is, for example, a multivalent oxide of 100-2,500 A thickness, containing impurities which provide conduction centers. Examples of these impurites include Bi, Sb, As, P, Ti, W, in amounts 0.05-10 percent by weight (1018- 1021 impurities/cm.3). The insulator is contacted by two electrodes which can be metals, such as transition metals. A particularly good device is NbBi alloy - NbBixOy-Bi.