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1.发明授权Process for increasing photoresist adhesion to a semiconductor by treating the semiconductor with a disilylamide 失效通过用二甲苯胺处理半导体来增加光电子能力来降低半导体的工艺
公开(公告)号：US3586554A
公开(公告)日：1971-06-22
申请号：US3586554D
申请日：1969-01-15
Applicant: IBM
Inventor： COUTURE ROGER A , GLEASON ROBERT T , LAJZA JOHN J JR
IPC: G03F7/075 , H01L21/312 , H01L7/00
CPC classification number: H01L21/3121 , G03F7/0751 , Y10S438/948
Abstract: VERY SMALL PATTERNS MAY BE ETCHED IN SILICON DIOXIDE OR OTHER OXIDE SURFACES USING PHOTORESIST TO MASK AREAS OF SURFACES WHERE ETCHING IS NOT DESRIED BY APPLYING A DISILYLAMIDE TO THE SURFACE TO INCREASE THE AHESION OF THE PHOTORESIST. THE PROCESS IS PARTICULARLY USEFUL FOR ETCHING PATTERNS IN SILICON DIOXIDE MASKS USED IN THE FABRICATION OF MICROMINIATURE SEMICONDUCTOR DEVICES.
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公开(公告)号：DE68919573T2
公开(公告)日：1995-05-24
申请号：DE68919573
申请日：1989-07-03
Applicant: IBM
Inventor： GLEASON ROBERT T , LINDE HAROLD G
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公开(公告)号：DE68919573D1
公开(公告)日：1995-01-12
申请号：DE68919573
申请日：1989-07-03
Applicant: IBM
Inventor： GLEASON ROBERT T , LINDE HAROLD G
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