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    Integrated circuit design adapted to interconnection
    2.
    发明专利
    Integrated circuit design adapted to interconnection 审中-公开
    集成电路设计适用于互连

    公开(公告)号：JP2005158075A

    公开(公告)日：2005-06-16

    申请号：JP2004339631

    申请日：2004-11-24

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

    Inventor： GOREN DAVID ,  GORDIN RACHEL ,  ZELIKSON MICHAEL

    IPC: G06F17/50 ,  G06F9/455 ,  H01L21/82

    CPC classification number: G06F17/5036

    Abstract: PROBLEM TO BE SOLVED: To provide an IC design method for accommodating crossing line effects. SOLUTION: A preliminary design of the integrated circuit is defined and critical interconnect lines in a preliminary design are identified (21). Further, critical interconnect lines which are affected by the crossing lines in the preliminary design are identified (22) and a transmission line model is defined to represent each critical interconnect line (23). A layout design of the integrated circuit comprising circuit components and parameters thereof is then defined by using the preliminary design and the transmission line model for each critical interconnect line (24). Next, component parameters are extracted from the layout design 25 (26) and the extracted components parameters are used for the simulation of the design (27). During this design process, an environment terminal is provided every transmission line model representing critical interconnect lines affected by a crossing line. COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题：提供一种用于适应交叉线效应的IC设计方法。

    解决方案：定义了集成电路的初步设计，并确定了初步设计中的关键互连线（21）。 此外，识别在初步设计中受交叉线影响的关键互连线（22），并且传输线模型被定义为表示每个关键互连线（23）。 然后通过使用每个关键互连线（24）的初步设计和传输线模型来定义包括电路部件及其参数的集成电路的布局设计。 接下来，从布局设计25（26）中提取组件参数，并且提取的组件参数用于设计的仿真（27）。 在该设计过程中，为每个传输线模型提供环境终端，表示受交叉线影响的关键互连线。 版权所有（C）2005，JPO＆NCIPI

    INTEGRATED CIRCUIT TRANSFORMER DEVICES FOR ON-CHIP MILLIMETER-WAVE APPLICATIONS
    3.
    发明申请
    INTEGRATED CIRCUIT TRANSFORMER DEVICES FOR ON-CHIP MILLIMETER-WAVE APPLICATIONS 审中-公开
    用于片上微波应用的集成电路变压器设备

    公开(公告)号：WO2006110207A2

    公开(公告)日：2006-10-19

    申请号：PCT/US2006005013

    申请日：2006-02-10

    Applicant: IBM ,  GOREN DAVID ,  PFEIFFER ULLRICH R ,  SHEINMAN BENNY ,  SHLAFMAN SHLOMO

    Inventor： GOREN DAVID ,  PFEIFFER ULLRICH R ,  SHEINMAN BENNY ,  SHLAFMAN SHLOMO

    IPC: H01L29/00

    CPC classification number: H01L23/5223 ,  H01L23/5225 ,  H01L23/5286 ,  H01L23/645 ,  H01L2924/0002 ,  H01L2924/3011 ,  H03F3/26 ,  H03F3/45089 ,  H03F3/602 ,  H01L2924/00

    Abstract: Methods are provided for building integrated circuit transformer devices having compact universal and scalable architectures for millimeter wave applications. For example, an integrated circuit transformer (22) is formed on a semiconductor substrate (21) and includes a ground shield (23) formed on the substrate (21), a primary conductor (24) comprising an elongated conductive strip and a secondary conductor (25) comprising an elongated conductive strip. The primary conductor (24) and the secondary conductor (25) are aligned to form a coupled-wire structure that is disposed adjacent to the ground shield (23). The ground shield (23) comprises a pattern of close-ended parallel elongated slots (23a) and parallel conductive strips (23b) that are commonly connected at end portions thereof along edge regions (23c) of the ground shield (23). The slots (23a) and strips (23b) are disposed orthogonal to the primary (24) and secondary (25) conductors. The edge regions (23c) provide current return paths that are collinear to the primary (24) and secondary (25) conductors. The integrated circuit transformer (22) can be used as template or building block, which is parameterized by length, for constructing various integrated circuit devices and modular structures including, but not limited to, power amplifiers, n:l impendence transformers, and power combiners.

    Abstract translation: 提供了用于构建具有用于毫米波应用的紧凑通用和可扩展架构的集成电路变压器设备的方法。 例如，集成电路变压器（22）形成在半导体衬底（21）上并且包括形成在衬底（21）上的接地屏蔽（23），包括细长导电条和次级导体 （25）包括细长导电条。 主导体（24）和次级导体（25）被对准以形成邻近接地屏蔽（23）设置的耦合线结构。 接地屏蔽（23）包括在接地屏蔽（23）的边缘区域（23c）处在其端部共同连接的近端平行细长槽（23a）和平行导电条（23b）的图案。 槽（23a）和条（23b）与主（24）和次（25）导体正交设置。 边缘区域（23c）提供与初级（24）和次级（25）导体共线的电流返回路径。 集成电路变压器（22）可以用作模板或构件块，其长度参数化，用于构建各种集成电路装置和模块化结构，包括但不限于功率放大器，n阻抗变压器和功率组合器 。

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