PRODUCTION METHOD OF HIGH-DENSITY SEMICONDUCTOR SUBSTRATE AND HIGH-DENSITY FIRED SUBSTRATE

    公开(公告)号:JP2000236038A

    公开(公告)日:2000-08-29

    申请号:JP2000025917

    申请日:2000-02-03

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To offer a structure and a method which enable usage of at least one very thin green tape with an assistance of at least one thick green tape. SOLUTION: This method for forming a lamination structure uses at least one organic bonding barrier 33 to bond at least one very thin green sheet 10 and/or at least one green sheet having high-density conductive patterns 26 and 28 to at least one thick green sheet 20. This enables the high-density multilayer ceramic structure to be intactly peeled from the lamination plate, and to be obtained as a product.

    DEVICE FOR DEPOSITING METAL
    3.
    发明专利

    公开(公告)号:JPH11323554A

    公开(公告)日:1999-11-26

    申请号:JP7813199

    申请日:1999-03-23

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To provide a device for depositing a source metal on the surface of an accepting metal bonded to a ceramic substrate. SOLUTION: A CVD process in indicated. In this process, a source metal 21 such as nickel or a nickel metal is deposited on to the surface of an accepting metal 12 by using an iodine source 27. The soruce metal and an inert material 23 giving separation to the space between the source metal and the surface of the accepting metal is integrated to a single structure 20. Fundamentally, the CVD of Ni on Mo or W is made possible. The nickel source is physically separated from the surface of a high m.p. metal to be applied with plating by using at least one kind of inert material. The inert material is in floating contact with the surface of the high m.p. metal to be coated with nickel or a nickel alloy.

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