公开(公告)号：JP2000124572A

公开(公告)日：2000-04-28

申请号：JP11767999

申请日：1999-04-26

Applicant: IBM

Inventor： DONALD RENE WALL ,  SURINIVASA S N REDI

IPC: H05K1/09 ,  C04B41/52 ,  C04B41/89 ,  C12N15/34 ,  C23C16/06 ,  H01L23/498 ,  H05K1/03 ,  H05K1/11 ,  H05K3/24 ,  H05K3/40

Abstract: PROBLEM TO BE SOLVED: To optimize the amount of non-metal added to a paste by mixing a filler material with either a titania or zirconia related to a paste for a via of a ceramic substrate and external feature. SOLUTION: A via 2 is formed inside a substrate 1 comprising three layers of ceramic material layer, and related to the via 2, a paste is formed from either titania or zirconia or both 2A and any one of a plurality of standard fillers such as alumina, sub-micron alumina, etc., or a plurality of objects 2B, molybdenum 2C, glass 2D, etc. A surface layer with the bias 2 exposed is plated with a dry process nickel plating or its alloy ion. Thus, the amount of non-metal added to a paste is optimized.

公开(公告)号：JP2000001782A

公开(公告)日：2000-01-07

申请号：JP7810099

申请日：1999-03-23

Applicant: IBM

Inventor： DONALD RENE WALL ,  GARANT JOHN J ,  PRETTYMAN KEVIN MICHAEL ,  REDDY SRINIVASA S-N

IPC: C23C16/14 ,  C23C16/44 ,  H01L21/285

Abstract: PROBLEM TO BE SOLVED: To provide a method for depositing a source metal on a receiving metal joined to a ceramic substrate. SOLUTION: A CVD(chemical vapor deposition) process is indicated. In this process, nickel or a nickel alloy is deposited on the surface of a receiving metal 12. At this time, an iodine source is used, and at least one kind of inert separating material 23 to be in contact with the surface of the receiving metal is used. This method fundamentally enables the CVD of Ni on Mo or Wo. The nickel source is physically separated from the surface of the high m.p. metal to be plated by using at least one kind of inert material. The inert material is in contact with the surface of the m.p. metal to be coated with nickel in a state of being floated.

公开(公告)号：JPH11323554A

公开(公告)日：1999-11-26

申请号：JP7813199

申请日：1999-03-23

Applicant: IBM

Inventor： DONALD RENE WALL ,  GOVINDARAJAN NATARAJAN ,  REDDY SRINIVASA S-N

IPC: C23C16/08 ,  H01L21/285

Abstract: PROBLEM TO BE SOLVED: To provide a device for depositing a source metal on the surface of an accepting metal bonded to a ceramic substrate. SOLUTION: A CVD process in indicated. In this process, a source metal 21 such as nickel or a nickel metal is deposited on to the surface of an accepting metal 12 by using an iodine source 27. The soruce metal and an inert material 23 giving separation to the space between the source metal and the surface of the accepting metal is integrated to a single structure 20. Fundamentally, the CVD of Ni on Mo or W is made possible. The nickel source is physically separated from the surface of a high m.p. metal to be applied with plating by using at least one kind of inert material. The inert material is in floating contact with the surface of the high m.p. metal to be coated with nickel or a nickel alloy.