公开(公告)号：GB2523870A

公开(公告)日：2015-09-09

申请号：GB201419302

申请日：2014-10-30

Applicant: IBM

Inventor： VENTRONE SEBASTIAN THEODORE ,  GOODNOW KENNETH JOSEPH ,  OGILVIE CLARENCE ROSSER ,  WOODRUFF CHARLES ,  GRAF RICHARD STEPHEN

IPC: H01L25/065 ,  H01L21/768 ,  H01L23/48

Abstract: A heat conductive layer 308 is deposited on a first surface of a wafer of semiconductor chips 332. An insulating layer 312 is then deposited on top of the heat conducting layer. The heat conductive layer is etched to form vias that expose through-electrodes 305 on the first surface of each semiconductor chip. Conductive pads 316 are deposited on the through-electrodes on a second surface of each semiconductor chip. The semiconductor chips are stacked, wherein the conductive bumps of a second one of the semiconductor chips electrically contact the through-electrodes of a first one of the semiconductor chips through the vias of the first semiconductor chip and the conductive bumps of a third one of the semiconductor chips electrically contact the through-electrodes of the second semiconductor chip through the vias of the second semiconductor chip. The holes in the thermally conductive layer and the insulating layer may be formed by etching. The through electrodes may be copper pillars and an underfill may be applied between the bottom semiconductor chip and a substrate.