公开(公告)号：DE2407897A1

公开(公告)日：1974-09-12

申请号：DE2407897

申请日：1974-02-19

Applicant: IBM

Inventor： BRASLAU NORMAN ,  CUOMO JEROME JOHN ,  HARRIS ERIK PRESTON ,  HOVEL HAROLD JOHN

IPC: H01L33/00 ,  H05B33/12 ,  H05B33/02

Abstract: A GaN electroluminescent structure has been fabricated on a silicon substrate allowing for the construction of light-emitting diodes in the visible region on a planar surface carrying other silicon dependent devices.

公开(公告)号：DE3170605D1

公开(公告)日：1985-06-27

申请号：DE3170605

申请日：1981-08-19

Applicant: IBM

Inventor： CHANG WEN HSING ,  GHEEWALA TUSHAR RAMESH ,  HARRIS ERIK PRESTON

IPC: H01L27/18 ,  H01L39/02 ,  H01L39/22 ,  H01L39/08

Abstract: In superconductive circuitry including a superconducting ground plane (18), a magnetic flux trapping moat (24) is provided which surrounds a superconductive device (I). The moat is preferably a cut through the superconducting ground plane which extends along a perimeter surrounding the superconducting device, the moat being continuous except for small regions (26) where there is no cut. The small regions serve as current carrying portions to link the ground plane within the moat to the rest of the ground plane outside of the moat. The moat is a flux pinning center so that magnetic flux does not enter the ground plane region located near the superconducting device.

公开(公告)号：DE2808701A1

公开(公告)日：1978-09-14

申请号：DE2808701

申请日：1978-03-01

Applicant: IBM

Inventor： HARRIS ERIK PRESTON ,  KEYES ROBERT WILLIAM

IPC: B21C37/04 ,  C23C14/48 ,  C23F1/02 ,  C23F4/00 ,  H01L21/306 ,  H01L21/768 ,  H01L39/24 ,  H01L21/265 ,  H01L21/283