Abstract:
A voltage-stable, negative resistance device is provided that comprises a bulk material which is subjected to both a selected Radio Frequency electric field and a DC bias electric field. A pair of such devices provides a memory when mounted in a waveguide that is subjected to either a standing wave field or a traveling wave field.
Abstract:
Electrical parameter values, such as semiconductor sheet resistivity and mobility values, of a sample are measured in an apparatus of the kind in which the sample is positioned in a microwave guide and the microwave signal reflected from the sample is compared to the incident microwave to provide information about the values. The sample, a wafer 1, is positioned between parallel plates 2, 3 in a wafer holder 4, the plate 3 comprising support plate 30, 31 and wafer backing plate 33 held in place by vacuum chamber 34,35. The plate 2 has a groove 27 positioned and dimensioned to provide a so-called "choke flange" which compensates for the transmission discontinuity in the waveguide caused by the gap between the plates 2,3. The wafer 1 extends right across the total cross-section of the waveguide formed by the duct 7,8. The end of the duct 7 is coupled to a microwave source and the end of duct 8 is terminated in a short circuit, the spacing of which from the sample can be adjusted.
Abstract:
A GaN electroluminescent structure has been fabricated on a silicon substrate allowing for the construction of light-emitting diodes in the visible region on a planar surface carrying other silicon dependent devices.
Abstract:
A GaN electroluminescent structure has been fabricated on a silicon substrate allowing for the construction of light-emitting diodes in the visible region on a planar surface carrying other silicon dependent devices.