Abstract:
This invention is directed generally to integrated semiconductor devices including fabrication methods therefor and, more particularly, to insulator encapsulated, dielectrically isolated, integrated semiconductor devices including fabrication methods therefor.
Abstract:
A resistance standard for calibrating four-point probes used to measure resistances of semiconductor material has a metal pattern having an area of known resistance value deposited on the surface of a semiconductor wafer. Four diffused areas of opposite conductivity to the remainder of the wafer are disposed adjacent to and are electrically connected to the area of known resistance value. One point of the probe is contacted to each of the diffused areas to connect the probe to the standard. A constant current is passed through the area of known resistance and the voltage drop across the area measured. This standard is both stable and allows probe to semiconductor contact experienced in actual measurements to be duplicated during calibration of the probe.