公开(公告)号：JPH11265866A

公开(公告)日：1999-09-28

申请号：JP512899

申请日：1999-01-12

Applicant: IBM ,  SIEMENS AG

Inventor： JASO MARK A ,  SCHNABEL RAINER F

IPC: H01L21/304 ,  H01L21/321

Abstract: PROBLEM TO BE SOLVED: To polish efficiently a work covered with a metal layer applying a damascene method by a method wherein a wafer covered with the metal layer is polished unit the metal layer is stopped leaving on the outside of a desired circuit pattern and the outside of an arbitrary dummy circuit pattern. SOLUTION: Opening parts 15a, 15b, 15c and 15d for interconnecting opening parts are formed in a silicon dioxide dielectric layer 14 laminated on a silicon substrate 13, a metal layer 16, which is extended from the surface of the layer 14 to the surface of the silicon wafer 13, is covered on the upper surface of the layer 14 and the opening parts 15a to 15d and dummy opening parts 20 are filled with the layer 16, but a metallization on the surface of a region 17 is evenly executed. The metallized wafer is placed on a chemical polishing machine using a well-know means and the layer 16 is removed up to the surface of the layer 14. The surface of the remaining layer 14, which is shown at the end parts 14a and 14b on both sides of the layer 14, is substantially formed horizontally extending over the whole region 17 of chips.

公开(公告)号：JPH11265862A

公开(公告)日：1999-09-28

申请号：JP533099

申请日：1999-01-12

Applicant: IBM

Inventor： GAMBINO JEFFREY P ,  JASO MARK A

IPC: B24B37/00 ,  H01L21/304 ,  H01L21/321

Abstract: PROBLEM TO BE SOLVED: To provide a process which is capable of minimizing the corrosion of an insulator at the edge section of an array, during the selective chemical mechanical polishing(CMP) of a silicon wafer. SOLUTION: A polishing process which can reduce the corrosion of a polishing stopping layer 4 includes the use of a slurry composed of particles and an alkali solution. The slurry which reduces the corrosion of the layer 4 is prepared by mixing solid particles having fine particle sizes in the alkali solution at a mixing ratio of about 0.2 wt.% to about 0.4 wt.% and furthermore increasing the chemical component of the alkali solution. The pH of the slurry is adjusted to be between about 9.5 and about 10.5.

公开(公告)号：JPH10178096A

公开(公告)日：1998-06-30

申请号：JP34005197

申请日：1997-12-10

Applicant: SIEMENS AG ,  IBM

Inventor： JASO MARK A ,  PALM HERBERT ,  POETZLBERGER HANS WERNER

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To eliminate an excessive amount of aluminum on the surface of silicon oxide by adhering an aluminum layer onto a metal-stopping layer so that a via and an opining can be filled and chemically and mechanically polishing the aluminum layer toward the metal-stopping layer downward and eliminating the metal-stopping layer. SOLUTION: An aluminum layer 26 is adhered onto a metal sopping layer 24 and an opening and vias 18 and 22 are filled. The aluminum layer 26 is not in a flay-surface shape on the opening but is lightly isometric. Then, the excessive amount of aluminum layer 26 treated by using CMP to eliminate an excessive amount of aluminum front the surface of a silicon dioxide layer. In this case, the metal-stopped layer 24 remains to exposed. Then, the exposed metal-stopping layer 24 is eliminated, for example, by normal etching. On the other hand, since aluminum is slightly indented due to a recess generated by CMP, silicon dioxide - aluminum layers 12 and 26 that are in flat-surface shape and are not damaged are generated due to etching or polishing.

公开(公告)号：SG77213A1

公开(公告)日：2000-12-19

申请号：SG1999000035

申请日：1999-01-11

Applicant: IBM

Inventor： GAMBINO JEFFREY PETER ,  JASO MARK A

IPC: H01L21/304 ,  H01L21/321 ,  B24B37/00

Abstract: A process for reducing polish stop erosion includes using a slurry of particles and an alkaline solution. The slurry for reducing polish stop erosion has a reduced solids content, finer particle size, and an increased chemical component. The pH of the slurry is between about 9.5 and 10.5.

公开(公告)号：MY117502A

公开(公告)日：2004-07-31

申请号：MYPI9802182

申请日：1998-05-15

Applicant: IBM

Inventor： JASO MARK A ,  MANDELMAN JACK A ,  TONTI WILLIAM R ,  WORDEMAN MATTHEW R

IPC: H01L27/01 ,  H01L21/00 ,  H01L21/20 ,  H01L21/76 ,  H01L21/762 ,  H01L21/84 ,  H01L27/12 ,  H01L31/0392

Abstract: A SEMICONDUCTOR DEVICE HAVING AREAS (100) THAT ARE SEMICONDUCTOR ON INSULATOR (SOI) AND AREAS (102) THAT ARE BULK, SINGLE CRYSTALLINE SEMICONDUCTIVE AREAS IS PROVIDED IN WHICH CONDUCTIVE SPACERS (105, 124) MAY BE FORMED TO ELECTRICALLY CONNECT THE SOI AREAS TO GROUND IN ORDER TO OVERCOME FLOATING BODY EFFECTS THAT CAN OCCUR WITH SOI. ADDITIONALLY, INSULATIVE SPACERS (107, 126) MAY BE FORMED ON THE SURFACE OF THE CONDUCTIVE SPACERS TO ELECTRICALLY ISOLATE THE SOI REGIONS (120) FROM THE BULK REGIONS (122). A NOVEL METHOD FOR MAKING BOTH OF THESE PRODUCTS IS PROVIDED IN WHICH THE EPITAXIALLY GROWN, SINGLE CRYSTALLINE BULK REGIONS NEED NOT BE SELECTIVELY GROWN, BECAUSE A SACRIFICIAL POLISHING LAYER IS DEPOSITED, IS ALSO PROVIDED.(FIG. 4)