公开(公告)号：DE2908972A1

公开(公告)日：1979-09-27

申请号：DE2908972

申请日：1979-03-07

Applicant: IBM

Inventor： ABOAF JOSEPH ADAM ,  CUOMO JEROME JOHN ,  GANGULEE AMITAVA ,  KOBLISKA ROBERT JOHN

IPC: C23C14/00 ,  C21D6/00 ,  C22F1/00 ,  C23C14/14 ,  C23C14/58 ,  H01F10/12 ,  H01F10/13 ,  H01F10/14 ,  H01F41/14 ,  H01F10/02 ,  G11B5/62 ,  G11B5/12 ,  G11C19/08

Abstract: A sputtered thin film of an amorphous material composed of a magnetic transition metal X and element Y plus possibly an element Z has low coercivity for domains in the plane, has a well defined and stable magnetic easy axis which is extremely stable without heating above the Curie point, with a high and flat value of permeability from low frequencies to greater than 10 megahertz. Metal X can include at least one of Fe, Ni, and Co. Element Y can include at least one of Si and B. Element Z can be included composed of Cr, for example.

公开(公告)号：DE2862036D1

公开(公告)日：1982-11-04

申请号：DE2862036

申请日：1978-12-09

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  GANGULEE AMITAVA ,  KOBLISKA ROBERT JOHN

IPC: C22C1/00 ,  C22C45/04 ,  C23C14/00 ,  C23C14/14 ,  C23C30/00 ,  H01C7/00 ,  H01F10/12 ,  H01F10/13 ,  H01F10/14 ,  H01F41/18 ,  C23C15/00

Abstract: These amorphous metal-alloy films include nitrogen, greater than about one atomic percent at least one transition metal selected from Cr, Fe, Co and Ni with at least one element forming an amorphous alloy therewith, selected from the "glass forming" elements, i.e., B, Si, Al, C and P. The alloys can be formed by deposition in a vacuum chamber. When films are sputtered, the target is composed of the above alloy elements with at least one element selected from each of the transition metal and glass forming element groups. Sputtering occurs in an atmosphere above about 2% vol. N2 gas mixed with an inert gas, e.g., Ar. Alloys produced include N, i.e., (Co-Fe-B)N and (Fe-B)N. Above about 2 atomic % N in the film, films have lower values of saturation magnetization 4 pi Ms. Above a 2% vol. N2 gas in the plasma, electrical resistivity increases. Over 0.5% vol. N2 gas in the plasma, the film's effective perpendicular anisotropy field Hk* increases. For (Co-Fe-B)N, the anisotropy direction moves from in plane to perpendicular above 2% vol. N2 plasmas. For (Fe-B)N, Hk* increases with N2 up to 10% vol. N2 plasma. The N% in a film varies linearly with the log of N2% vol. Films show markedly improved adhesion, corrosion resistance and hardness. Magnetic thermal stability increases with N2 above about 5% vol. N2 in a plasma. Structural and magnetic properties are stable for annealing up to 400 DEG C.