公开(公告)号：DE2060476A1

公开(公告)日：1971-07-22

申请号：DE2060476

申请日：1970-12-09

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  MAX D HEURLE FRANCOIS ,  GANGULEE AMITAVA

IPC: H01C17/06 ,  C23C14/14 ,  H01B1/00 ,  H01F10/06 ,  H01F10/10 ,  H01L21/00 ,  H01L21/28 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/532 ,  H01L29/43 ,  H01L39/22 ,  H01L39/24 ,  H05K3/14 ,  C22F3/00

公开(公告)号：DE2862036D1

公开(公告)日：1982-11-04

申请号：DE2862036

申请日：1978-12-09

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  GANGULEE AMITAVA ,  KOBLISKA ROBERT JOHN

IPC: C22C1/00 ,  C22C45/04 ,  C23C14/00 ,  C23C14/14 ,  C23C30/00 ,  H01C7/00 ,  H01F10/12 ,  H01F10/13 ,  H01F10/14 ,  H01F41/18 ,  C23C15/00

Abstract: These amorphous metal-alloy films include nitrogen, greater than about one atomic percent at least one transition metal selected from Cr, Fe, Co and Ni with at least one element forming an amorphous alloy therewith, selected from the "glass forming" elements, i.e., B, Si, Al, C and P. The alloys can be formed by deposition in a vacuum chamber. When films are sputtered, the target is composed of the above alloy elements with at least one element selected from each of the transition metal and glass forming element groups. Sputtering occurs in an atmosphere above about 2% vol. N2 gas mixed with an inert gas, e.g., Ar. Alloys produced include N, i.e., (Co-Fe-B)N and (Fe-B)N. Above about 2 atomic % N in the film, films have lower values of saturation magnetization 4 pi Ms. Above a 2% vol. N2 gas in the plasma, electrical resistivity increases. Over 0.5% vol. N2 gas in the plasma, the film's effective perpendicular anisotropy field Hk* increases. For (Co-Fe-B)N, the anisotropy direction moves from in plane to perpendicular above 2% vol. N2 plasmas. For (Fe-B)N, Hk* increases with N2 up to 10% vol. N2 plasma. The N% in a film varies linearly with the log of N2% vol. Films show markedly improved adhesion, corrosion resistance and hardness. Magnetic thermal stability increases with N2 above about 5% vol. N2 in a plasma. Structural and magnetic properties are stable for annealing up to 400 DEG C.

公开(公告)号：DE2761248D1

公开(公告)日：1981-12-10

申请号：DE2761248

申请日：1978-12-08

Applicant: IBM

Inventor： GANGULEE AMITAVA ,  HO PAUL SIU-CHUNG ,  HOWARD JAMES KENT

IPC: H05K1/09 ,  B41J2/335 ,  H01B1/02 ,  H01B5/14 ,  H01F10/06 ,  H01L21/3205 ,  H01L23/532 ,  H05K3/02 ,  H01L29/46 ,  H01L21/28

Abstract: Gold (a) and at least one metal (b) which is Zr, Nb, and/or Hf, are deposited on the substrate, followed by heating at 200-500 degrees C., pref. for 1-100 h, to form a cpd. (a,b). Masking and selective removal of the cpd. (a,b) is then used to form the conductor strip. The pref. substrate is suitable for mfg. magnetic bubble memories. Deposition pref. occurs in a vacuum harder than 10-5 torr total pressure in the absence of oxygen; or via cathodic sputtering in inert gas using high frequency of 500-2000 V and d.c. bias of 0-200 V. The strip pref. uses a bottom and top layer of cpd. (a,b), with a middle layer of gold. The min. dimension of the strip is pref. below 0.015 mm. Method is used to minimise electromigration on silicon semiconductor substrates carrying integrated circuits, and on garnet substrate for bubble memories.

公开(公告)号：CA906678A

公开(公告)日：1972-08-01

申请号：CA906678D

Applicant: IBM

Inventor： HEURLE FRANCOIS M D ,  CHAUDHARI PRAVEEN ,  GANGULEE AMITAVA

公开(公告)号：FR2420194A1

公开(公告)日：1979-10-12

申请号：FR7903174

申请日：1979-02-01

Applicant: IBM

Inventor： ABOAF JOSEPH A ,  CUOMO JEROME J ,  GANGULEE AMITAVA ,  KOBLISKA ROBERT J

IPC: C23C14/00 ,  C21D6/00 ,  C22F1/00 ,  C23C14/14 ,  C23C14/58 ,  H01F10/12 ,  H01F10/13 ,  H01F10/14 ,  H01F41/14 ,  H01F10/02 ,  C22C19/00 ,  C22C38/00 ,  C22F3/02

Abstract: A sputtered thin film of an amorphous material composed of a magnetic transition metal X and element Y plus possibly an element Z has low coercivity for domains in the plane, has a well defined and stable magnetic easy axis which is extremely stable without heating above the Curie point, with a high and flat value of permeability from low frequencies to greater than 10 megahertz. Metal X can include at least one of Fe, Ni, and Co. Element Y can include at least one of Si and B. Element Z can be included composed of Cr, for example.

公开(公告)号：DE2908972A1

公开(公告)日：1979-09-27

申请号：DE2908972

申请日：1979-03-07

Applicant: IBM

Inventor： ABOAF JOSEPH ADAM ,  CUOMO JEROME JOHN ,  GANGULEE AMITAVA ,  KOBLISKA ROBERT JOHN

IPC: C23C14/00 ,  C21D6/00 ,  C22F1/00 ,  C23C14/14 ,  C23C14/58 ,  H01F10/12 ,  H01F10/13 ,  H01F10/14 ,  H01F41/14 ,  H01F10/02 ,  G11B5/62 ,  G11B5/12 ,  G11C19/08

Abstract: A sputtered thin film of an amorphous material composed of a magnetic transition metal X and element Y plus possibly an element Z has low coercivity for domains in the plane, has a well defined and stable magnetic easy axis which is extremely stable without heating above the Curie point, with a high and flat value of permeability from low frequencies to greater than 10 megahertz. Metal X can include at least one of Fe, Ni, and Co. Element Y can include at least one of Si and B. Element Z can be included composed of Cr, for example.