公开(公告)号：DE3070833D1

公开(公告)日：1985-08-08

申请号：DE3070833

申请日：1980-09-19

Applicant: IBM DEUTSCHLAND ,  IBM

Inventor： GRESCHNER JOHANN DR ,  KRAUS GEORG ,  SCHMID GERHARD DR

IPC: C30B33/00 ,  G03F1/20 ,  H01L21/027 ,  H01L29/06 ,  H01L21/00 ,  G03F1/00 ,  H01L23/52 ,  H01L29/40

Abstract: A structure for shaping or masking energetic radiation is described. The structure comprises a shallow silicon body having at least one through opening, and a metal silicide layer covering the surface of the structure. The structure characterized by having a high mechanical, and thermal stability may be used particularly in electron and X-ray lithography. More specifically, the structure may be used as an aperture for electron beams, or as a mask for X-rays. The production of the structure includes the steps of making through openings in the silicon body, and the forming of the silicide layer by vapor depositing a metal on the surface of the silicon body and by subsequent annealing.

公开(公告)号：DE3377454D1

公开(公告)日：1988-08-25

申请号：DE3377454

申请日：1983-09-23

Applicant: IBM DEUTSCHLAND ,  IBM

Inventor： BAYER THOMAS ,  KRAUS GEORG ,  KUNZEL ULRICH DR DIPL CHEM ,  RENZ GISELA ,  SCHAFER ROLF DR

IPC: H05K3/24 ,  C23C14/04 ,  C23C14/14 ,  C23C14/22 ,  C23C14/24 ,  C23C14/34 ,  H01J37/317 ,  H01J37/32 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H05K3/12 ,  H05K3/14 ,  H05K3/10 ,  C23C14/36

Abstract: A metal layer is applied selectively and self-adjustingly on conductive regions on the surface of insulating or semiconductive substrates by positioning a metal plate (3), consisting of one or more layers of material to be applied, facing and at a small spacinq from the conductive regions (2) and then producing Tesla currents between the metal plate (3) and the conductive regions (2). Also claimed are a system for carrying out the process and use of the process for thickening conductive patterns, esp. for prodn. of conductor lines on or in modules of (glass-) ceramic material, circuit boards and semiconductor bodies, of reproductions of metallic structures, for filling holes in insulating layers between two metallisation levels which are electrically interconnected, for contact improving of solder spots, and for repair purposes.

公开(公告)号：DE3374152D1

公开(公告)日：1987-11-26

申请号：DE3374152

申请日：1983-05-02

Applicant: IBM DEUTSCHLAND ,  IBM

Inventor： GLATZEL MICHAEL DIPL PHYS ,  HINKEL HOLGER DR DIPL PHYS ,  KAUS GERHARD DR ,  KRAUS GEORG ,  KUENZEL ULRICH DR DIPL CHEM ,  MAX ERHARD DR DIPL PHYS ,  MOENNICH ANNELIE

IPC: G11B5/72 ,  C09D5/23 ,  C09D163/00 ,  C10M107/38 ,  C10N40/18 ,  G11B5/40 ,  G11B5/725 ,  G11B5/82 ,  G11B5/187

Abstract: In an arrangement of a magnetic plate, and over that a magnetic head, the side of the head towards the plate consists of a magnetisable layer (1) of polymer binder contg. dispersed magnetic particles, a lubricant film (5) is applied over the layer (1), and the substrate of the head is at least partly ceramic. The surface (3) of the layer (1) is coated with a monomolecular bonding layer (4), consisting of a material which has been chemically bonded to the layer (1), which has a higher surface tension than the layer (1), and which forms van der waals' bonds with the lubricant film, and/or the lower side (6) and the back and front (7,8) of the head (2), consisting of magnetic head substrate, have been impregnated with a layer (9) of a material which prevents appreciable amts. of lubricant from adhering to the substrate.

公开(公告)号：DE3272669D1

公开(公告)日：1986-09-25

申请号：DE3272669

申请日：1982-03-18

Applicant: IBM DEUTSCHLAND ,  IBM

Inventor： HINKEL HOLGER DR DIPL PHYS ,  KAUS GERHARD DR ,  KRAUS GEORG ,  KUENZEL ULRICH DR DIPL CHEM ,  MUHL REINHOLD

IPC: H01L21/302 ,  C23C4/00 ,  C23C16/50 ,  C23C16/509 ,  C23F4/00 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/31 ,  C23C14/40

Abstract: A plasma reactor comprises a reaction chamber having two plate-shaped electrodes arranged parallel to and above each other, whereby the substrates are supported on the lower electrode and this electrode is additionally provided with a center opening (5) through which gas is fed into the electrode space or which is evacuated from it, and where (a) the upper electrode is connected to a high frequency AC or RF voltage and (b) which has no electrode material in the regions opposite the substrates and (c) where their position and shape are determined by the substrates on the lower electrode, causing the electric field in the electrode space to be selectively weakened at at least above the substrates.

公开(公告)号：DE3068214D1

公开(公告)日：1984-07-19

申请号：DE3068214

申请日：1980-09-06

Applicant: IBM DEUTSCHLAND ,  IBM

Inventor： FROSCH ALBERT ,  HINKEL HOLGER DR ,  KRAUS GEORG ,  KUNZEL ULRICH DR ,  ROGALLA DIETRICH DR ,  SCHNEIDER JOCHEN

IPC: B32B5/28 ,  B32B5/22 ,  B32B33/00 ,  G11B5/62 ,  G11B5/73 ,  G11B5/733 ,  G11B5/82 ,  G11B5/70 ,  H01F10/28

Abstract: 1. A magnetic disk substrate comprising a laminate of thin plastic lamellae (L1, L2, ..., LK), characterized in that said lamellae are reinforced by fibers (2) aligned in parallel to each other, that said anisotropic lamellae are arranged on top of each other at angular distances that are as large as possible, ranging from 0 to 60 degrees, and that the density of the outer lamellae is lower than that of the inner lamellae.

公开(公告)号：DE3376186D1

公开(公告)日：1988-05-05

申请号：DE3376186

申请日：1983-08-02

Applicant: IBM DEUTSCHLAND ,  IBM

Inventor： DRUSCHKE FRANK DR DIPL CHEM ,  KRAUS GEORG ,  KUNZEL ULRICH DR DIPL CHEM ,  RUH WOLF-DIETER DIPL ING ,  SCHAFER ROLF DR

IPC: C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H05K3/08 ,  C23F1/00 ,  H01L21/31

Abstract: Cpds. (A) contg. at least one CH3- or -CH2- gp. are used for dry-etching Cu in a glow discharge. The Cu can be etched selectively in the presence of polymers, e.g. after partly masking with a polymer layer of esp. a negative or positive lacquer or a polyimide.

公开(公告)号：DE3272083D1

公开(公告)日：1986-08-28

申请号：DE3272083

申请日：1982-03-31

Applicant: IBM DEUTSCHLAND ,  IBM

Inventor： BRANDEIS CHRISTINE ING GRAD ,  KEMPF JURGEN DR DIPL PHYS ,  KRAUS GEORG ,  KUNZEL ULRICH DR DIPL CHEM

IPC: C23F4/00 ,  H01J37/32 ,  H01J37/34 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/673

Abstract: A reactor comprising a plate-shaped cathode that is horizontally arranged and connected to an alternating voltage, in a ground connected casing, and gas inlet and gas outlet lines. The cathode is equipped with means for generating local magnetic fields restricted to the region of the individually supported substrates. The cathode can be furthermore have holes or openings in which are arranged substrate holders shiftable or movable vertically to relate to the substrate surface. The substrates are etched in the reactor by means of a plasma which is produced from at least one reactive gas. Each substrate is exposed to at least one local magnetic field. If a mostly chemically etchable material is to be etched in the presence of a mostly physically etchable material, to a much stronger extent than the latter, the advantageous etching speed ratio can be set in that the substrates are additionally raised over the cathode surface.

公开(公告)号：DE3071288D1

公开(公告)日：1986-01-23

申请号：DE3071288

申请日：1980-09-19

Applicant: IBM DEUTSCHLAND ,  IBM

Inventor： HINKEL HOLGER DR ,  KEMPF JURGEN DR ,  KRAUS GEORG ,  SCHMID GERHARD DR

IPC: H01L21/266 ,  H01L21/265 ,  H01L21/316

公开(公告)号：DE68903951T2

公开(公告)日：1993-07-08

申请号：DE68903951

申请日：1989-08-16

Applicant: IBM

Inventor： GRESCHNER JOHANN DR DIPL PHYS ,  BAYER THOMAS ,  KRAUS GEORG ,  WOLTER OLAF DR DIPL PHYS ,  WEISS HELGA

IPC: G01B7/34 ,  B81C1/00 ,  C23F1/00 ,  G01N27/00 ,  G01Q60/16 ,  G01Q60/38 ,  G01Q70/02 ,  G02B21/00 ,  H01J37/28 ,  H01L21/302 ,  H01L41/09

公开(公告)号：DE3233087A1

公开(公告)日：1984-03-08

申请号：DE3233087

申请日：1982-09-07

Applicant: IBM DEUTSCHLAND

Inventor： HINKEL HOLGER DIPL PHYS DR ,  KEMPF JUERGEN DIPL PHYS DR ,  KRAUS GEORG

IPC: C23C14/24 ,  C23C14/54 ,  H01L21/28 ,  H01L21/3205 ,  H01L29/49 ,  C23C13/02 ,  C30B33/00 ,  H01L21/285

Abstract: In the process, thin layers of a metal, preferably gold or silver, are vaporised onto a substrate at a substrate temperature below 30 DEG C at a rate of 1 to 1.5 nm/sec. The layers, with their layer thickness of 20 nm, have an optical transparency in the order of magnitude of > 10 %, a layer resistance of