公开(公告)号：DE68902141D1

公开(公告)日：1992-08-20

申请号：DE68902141

申请日：1989-08-16

Applicant: IBM

Inventor： GRESCHNER JOHANN DR DIPL-PHYS ,  BAYER THOMAS ,  KRAUS GEORG ,  WOLTER OLAF DR DIPL PHYS ,  WEISS HELGA ,  BARTHA JOHANN DR DIPL PHYS

IPC: G01B7/34 ,  B44C1/22 ,  B81C1/00 ,  C03C15/00 ,  C23F1/00 ,  G01N27/00 ,  G01Q60/04 ,  G01Q70/16 ,  H01J37/28 ,  H01L21/306 ,  H01L41/09

Abstract: A method is described for producing micromechanical sensors for the AFM/STM profilometry, which consist of a cantilever beam with at least one tip at its end and a mounting block at the opposite, comprising: 1. bilaterally coating a wafer substrate with an insulating layer; 2. producing a mask in the insulating layer on the top side of the wafer for future trench or groove etching, and a mask in the insulating layer on the bottom side of the wafer, using a first photolithographic step and reactive ion etching: 3. producing a trench or a groove in the wafer substrate by reactive ion or anisotropic wet etching, respectively, followed by removing the insulating layer from the top side by etching: 4. coating the surface of the wafer and the trench or groove with the desired cantilever beam and tip material, respectively; 5. baring cantilever beam and tip in a second photolithographic step and dry or wet etching steps, respectively; and 6. removing the supporting wafer material from the bottom side by anisotropic wet etching through the bottom side mask. In a preferred embodiment the area on the top side of the cantilever beam corresponding to the remaining piece of wafer on the bottom side is bonded with a block of glass via 'mallory' bonding at about 300 DEG C and 1000 V. Furthermore, the surface of the wafer substrate and the trench can be coated in a first step with a material with nonconformal step coverage, and in a second step with a material with conformal step coverage. The cantilever beam and the tip are bared in the layer with conformal step coverage, and the supporting wafer and the layer with nonconformal step coverage are removed by selective etching through the bottom side mask. The invention also comprises a micromechanical sensor for AFM/STM profilometry which is micromechanically manufactured from one piece of material.

公开(公告)号：DE68903951D1

公开(公告)日：1993-01-28

申请号：DE68903951

申请日：1989-08-16

Applicant: IBM

Inventor： GRESCHNER JOHANN DR DIPL PHYS ,  BAYER THOMAS ,  KRAUS GEORG ,  WOLTER OLAF DR DIPL PHYS ,  WEISS HELGA

IPC: G01B7/34 ,  B81C1/00 ,  C23F1/00 ,  G01N27/00 ,  G01Q60/16 ,  G01Q60/38 ,  G01Q70/02 ,  G02B21/00 ,  H01J37/28 ,  H01L21/302 ,  H01L41/09

公开(公告)号：DE68903950T2

公开(公告)日：1993-07-01

申请号：DE68903950

申请日：1989-08-16

Applicant: IBM

Inventor： BAYER THOMAS ,  GRESCHNER JOHANN DR DIPL PHYS ,  WEISS HELGA ,  WOLTER OLAF DR DIPL PHYS ,  WICKRAMASINGHE DIPL-PHYS DR ,  MARTIN DIPL-PHYS DR

IPC: G01B7/34 ,  G01B21/30 ,  G01N27/00 ,  G01Q10/04 ,  G01Q60/04 ,  G01Q60/16 ,  G01Q60/38 ,  G01Q70/10 ,  H01J37/28 ,  H01L21/00 ,  H01L21/66

Abstract: A method is described for producing ultrafine silicon tips for the AFM/STM profilometry comprising: 1. providing a silicon substrate and applying a silicon dioxide layer thereto; 2. producing a mask in said silicon dioxide layer by photolithography and wet or dry etching; 3. producing a tip shaft by transferring the mask pattern, produced in step 2, by reactive ion etching into the silicon substrate; 4. thinning the shaft and forming a base by isotropic wet etching; and 5. removing the mask by etching. The resulting tip shaft with a rectangular end may be pointed by argon ion milling. In a second embodiment there is an anisotropic wet etching step, prior to step 5, through the intact silicon dioxide mask, producing a negative profile of the shaft immediately below the mask. After this etching step the mask is removed by etching.

公开(公告)号：DE68902141T2

公开(公告)日：1993-02-25

申请号：DE68902141

申请日：1989-08-16

Applicant: IBM

Inventor： GRESCHNER JOHANN DR DIPL-PHYS ,  BAYER THOMAS ,  KRAUS GEORG ,  WOLTER OLAF DR DIPL PHYS ,  WEISS HELGA ,  BARTHA JOHANN DR DIPL PHYS

IPC: G01B7/34 ,  B44C1/22 ,  B81C1/00 ,  C03C15/00 ,  C23F1/00 ,  G01N27/00 ,  G01Q60/04 ,  G01Q70/16 ,  H01J37/28 ,  H01L21/306 ,  H01L41/09

Abstract: A method is described for producing micromechanical sensors for the AFM/STM profilometry, which consist of a cantilever beam with at least one tip at its end and a mounting block at the opposite, comprising: 1. bilaterally coating a wafer substrate with an insulating layer; 2. producing a mask in the insulating layer on the top side of the wafer for future trench or groove etching, and a mask in the insulating layer on the bottom side of the wafer, using a first photolithographic step and reactive ion etching: 3. producing a trench or a groove in the wafer substrate by reactive ion or anisotropic wet etching, respectively, followed by removing the insulating layer from the top side by etching: 4. coating the surface of the wafer and the trench or groove with the desired cantilever beam and tip material, respectively; 5. baring cantilever beam and tip in a second photolithographic step and dry or wet etching steps, respectively; and 6. removing the supporting wafer material from the bottom side by anisotropic wet etching through the bottom side mask. In a preferred embodiment the area on the top side of the cantilever beam corresponding to the remaining piece of wafer on the bottom side is bonded with a block of glass via 'mallory' bonding at about 300 DEG C and 1000 V. Furthermore, the surface of the wafer substrate and the trench can be coated in a first step with a material with nonconformal step coverage, and in a second step with a material with conformal step coverage. The cantilever beam and the tip are bared in the layer with conformal step coverage, and the supporting wafer and the layer with nonconformal step coverage are removed by selective etching through the bottom side mask. The invention also comprises a micromechanical sensor for AFM/STM profilometry which is micromechanically manufactured from one piece of material.

公开(公告)号：DE68903951T2

公开(公告)日：1993-07-08

申请号：DE68903951

申请日：1989-08-16

Applicant: IBM

Inventor： GRESCHNER JOHANN DR DIPL PHYS ,  BAYER THOMAS ,  KRAUS GEORG ,  WOLTER OLAF DR DIPL PHYS ,  WEISS HELGA

IPC: G01B7/34 ,  B81C1/00 ,  C23F1/00 ,  G01N27/00 ,  G01Q60/16 ,  G01Q60/38 ,  G01Q70/02 ,  G02B21/00 ,  H01J37/28 ,  H01L21/302 ,  H01L41/09

公开(公告)号：DE68903950D1

公开(公告)日：1993-01-28

申请号：DE68903950

申请日：1989-08-16

Applicant: IBM

Inventor： BAYER THOMAS ,  GRESCHNER JOHANN DR DIPL PHYS ,  WEISS HELGA ,  WOLTER OLAF DR DIPL PHYS ,  WICKRAMASINGHE DIPL-PHYS DR ,  MARTIN DIPL-PHYS DR

IPC: G01B7/34 ,  G01B21/30 ,  G01N27/00 ,  G01Q10/04 ,  G01Q60/04 ,  G01Q60/16 ,  G01Q60/38 ,  G01Q70/10 ,  H01J37/28 ,  H01L21/00 ,  H01L21/66

Abstract: A method is described for producing ultrafine silicon tips for the AFM/STM profilometry comprising: 1. providing a silicon substrate and applying a silicon dioxide layer thereto; 2. producing a mask in said silicon dioxide layer by photolithography and wet or dry etching; 3. producing a tip shaft by transferring the mask pattern, produced in step 2, by reactive ion etching into the silicon substrate; 4. thinning the shaft and forming a base by isotropic wet etching; and 5. removing the mask by etching. The resulting tip shaft with a rectangular end may be pointed by argon ion milling. In a second embodiment there is an anisotropic wet etching step, prior to step 5, through the intact silicon dioxide mask, producing a negative profile of the shaft immediately below the mask. After this etching step the mask is removed by etching.