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公开(公告)号：JPH10261584A
公开(公告)日：1998-09-29
申请号：JP5301298
申请日：1998-03-05
Applicant: IBM
Inventor： BAYER THOMAS , GRESCHNER JOHANN , KALT SAMUEL , MEISSNER KLAUS , PFEIFFER HANS
IPC: G03F1/20 , G03F1/22 , H01L21/027 , H01L21/306 , G03F1/16
Abstract: PROBLEM TO BE SOLVED: To easily form a support wall by forming a film mask with a mask field and a single-crystal silicon body, providing a support wall being covered with a film, forming the support wall by anisotropic plasma etching, and performing wet etching immediately before reaching the covering film of the support wall. SOLUTION: The support wall of a mask with a mask field 8 where a boundary is screened by a thin support wall 1 consists of a single-crystal silicon and is covered with a film 2 that is approximately 0.2 mm-2 μm thick. The support wall is formed by the anisotropic plasma etching of the single-crystal silicon body 1. Therefore, an opening that is approximately 400 μm deep with a vertical wall is etched into the silicon body. Plasma etching stops immediately before reaching the film 2 and the final thickness part before the film is eliminated by wet etching. A support wall being arranged accurately vertically to the film is formed easily, thus preventing the film from being damaged.
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公开(公告)号：JPH1082794A
公开(公告)日：1998-03-31
申请号：JP14767297
申请日：1997-06-05
Applicant: IBM
Inventor： BAYER THOMAS , GRESCHNER JOHANN DR , WEISS HELGA
Abstract: PROBLEM TO BE SOLVED: To provide a micro-mechanical sensor for measuring shape with an atomic force microscopic microscope(AFM)/a scanning tunnel microscope(STM) which has sufficient mechanical rigidity and is appropriate for measuring an extremely deep and narrow structure having a positive flank angle. SOLUTION: The micro-mechanical sensor includes a bar 2, with a tip 1 existing for interaction with a test face to be sampled on one of its ends, while a fixing block for fixing the bar 2 exists at the other end of the bar 2. The tip 1 includes a basically conic shank 1a having a dish-shaped tip part 1b.
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公开(公告)号：JP2002098713A
公开(公告)日：2002-04-05
申请号：JP2001218755
申请日：2001-07-18
Applicant: IBM
Inventor： BAYER THOMAS , GRESCHNER JOHANN DR , MEISSNER KLAUS , STEINER WERNER , STOEHR ROLAND
Abstract: PROBLEM TO BE SOLVED: To provide a contact probe arrangement 1 for connecting electrically a test device to circular contact pads 2 of a device 3 to be tested. SOLUTION: The contact probes 4 are pressed perpendicularly onto the contact pads 2 in order to realize a low contact resistance, and can be bent in the transverse direction in regions 6a, 6b where the contact probes are installed in order to adjust the difference of heights of the contact pads 2 caused by a non-uniform surface of the device 3 to be tested. The contact probes 4 are installed in a guide groove 5. The guide groove 5 and the regions 6a, 6b are formed on a plane parallel to the plane of a guide groove 7, and covered with a protection plate. This constitution assures a contact probe array having a very high density. This kind of contact probe array can be used, for example, for detecting open and short in an electric circuit array of a microelectronic composite device.
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公开(公告)号：JPH11260247A
公开(公告)日：1999-09-24
申请号：JP301999
申请日：1999-01-08
Applicant: IBM
Inventor： BAYER THOMAS , GRESCHNER JOHANN DR , KALT SAMUEL , MEISSNER KLAUS , PAUL RUDOLF
Abstract: PROBLEM TO BE SOLVED: To obtain a field-emission element of various types by which obstacles of prior art such as high leakage current or the like can be overcome. SOLUTION: This field-emission element contains plural tip parts 2 composed in each aperture 5 which are formed by a gate electrode. When a prescribed voltage between the gate and a cathode is applied, electrons are emitted from one or more tip parts 2 into a vacuum. The tip parts 2 are made of single- crystal silicon 1 or polycrystal line silicon, and all of them have nearly same the height and end in the boundary layer between single-crystal silicon 1 or polycrystal line silicon and an insulator 3, respectively. The plural tip parts 2 are formed through plasma etching without special lithographic process. The tip-part forming process can be applied to a substrate of an arbitrary size, so that this field-emission element can be applied to a flat panel display.
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公开(公告)号：JPH11258251A
公开(公告)日：1999-09-24
申请号：JP36210998
申请日：1998-12-21
Applicant: IBM
Inventor： BAYER THOMAS , GRESCHNER JOHANN DR , DR ROBERT YUNJINJAA , KALT SAMUEL , HELGA WEISS
Abstract: PROBLEM TO BE SOLVED: To provide a micromachine-type sensor which is used to measure a shape by an atomic force microscope (AFM)/a scanning tunneling microscope(STM). SOLUTION: A micromachine-type sensor which is used to measure a shape by an AFM/an STM contains a cantilever beam 2 which holds a tip part 1a at one end and a fixed block 2 at the other end which is separated at a proper distance from the tip part 1a. The cantilever beam 2, the tip part 1a and the fixed block 3 are formed to be of a micromachine type. The tip part 1a is formed on the cantilever beam 2 at an angle of, e.g., 92 to 105 deg.. As a proper execution example, the tip part 1a is composed of polycrystal diamond, the cantilever beam 2 is composed of silicon nitride, and the fixed block 3 is composed of Pyrex glass. In addition, this invention is related to a tip part which is formed on a pedestal, to a tip part which comprises an arrow-shaped or spherical tip and to a method which forms the micromachine-type sensor.
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Patent Agency Ranking
公开(公告)号：DE3377454D1
公开(公告)日：1988-08-25
申请号：DE3377454
申请日：1983-09-23
Applicant: IBM DEUTSCHLAND , IBM
Inventor： BAYER THOMAS , KRAUS GEORG , KUNZEL ULRICH DR DIPL CHEM , RENZ GISELA , SCHAFER ROLF DR
IPC: H05K3/24 , C23C14/04 , C23C14/14 , C23C14/22 , C23C14/24 , C23C14/34 , H01J37/317 , H01J37/32 , H01L21/28 , H01L21/285 , H01L21/3205 , H05K3/12 , H05K3/14 , H05K3/10 , C23C14/36
Abstract: A metal layer is applied selectively and self-adjustingly on conductive regions on the surface of insulating or semiconductive substrates by positioning a metal plate (3), consisting of one or more layers of material to be applied, facing and at a small spacinq from the conductive regions (2) and then producing Tesla currents between the metal plate (3) and the conductive regions (2). Also claimed are a system for carrying out the process and use of the process for thickening conductive patterns, esp. for prodn. of conductor lines on or in modules of (glass-) ceramic material, circuit boards and semiconductor bodies, of reproductions of metallic structures, for filling holes in insulating layers between two metallisation levels which are electrically interconnected, for contact improving of solder spots, and for repair purposes.
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公开(公告)号：DE3365839D1
公开(公告)日：1986-10-09
申请号：DE3365839
申请日：1983-05-27
Applicant: IBM DEUTSCHLAND , IBM
Inventor： BAYER THOMAS , HINKEL HOLGER DR DIPL PHYS , KLEISCHMANN KURT , KUNZEL ULRICH DR DIPL CHEM , SCHAFER ROLF DR
Abstract: The invention relates to a composite magnetic disk for magnetic recording, which consists of an annular core of polymeric material to which is bonded at least one disk of reaction-bonded silicon carbide with a magnetic recording layer on its outer surface. After its processing, the SiSiC disk surface shows optimum planarity and smoothness so that it can be used as a magnetic disk substrate. Furthermore, the material has a low density and an extremely high specific modulus of elasticity so that numbers of revolution higher than obtainable with formerly known AlMg5 disk substrates can be reached.
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公开(公告)号：DE69427522D1
公开(公告)日：2001-07-26
申请号：DE69427522
申请日：1994-04-11
Applicant: IBM
Inventor： BAYER THOMAS , GRESCHNER DR , MARTIN YVES , MEISSNER KLAUS , WEISS HELGA
Abstract: To allow faithfully the quantitative interpretation of the measuring results obtained by scanning force microscopes (STM) or atomic force microscopes (AFM) the probe tips used have to be exactly characterized before and after measuring since their size and shape may change during the measuring procedure. If the tips are cone-shaped, their diameter and their cone angle have to be known accurately. Described are calibration standards for profilometers, especially for STMs and AFMs, which are of high accuracy and which allow calibration measurements without frequently removing the probe tips. Methods of producing these calibration standards are shown and examples are given for the use of the calibration standards for measuring features in the sub-nanometer range or for calibrating profilometers.
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公开(公告)号：DE19651029C2
公开(公告)日：1999-12-02
申请号：DE19651029
申请日：1996-12-09
Applicant: IBM
Inventor： BAYER THOMAS , GRESCHNER JOHANN , MEISSNER KLAUS
Abstract: The invention relates to calibration standards which are used chiefly for the calibration of profilometers and in atomic force- and scanning probe microscopes. The calibration standard has one step of defined height H or a multi-step system formed of several steps of the same step-height H and consisting of exactly one material. The manufacturing procedure for the calibration standard requires only a single masking layer for each of the different versions in the form of a one-step standard or a multi-step system.
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公开(公告)号：FR2740224A1
公开(公告)日：1997-04-25
申请号：FR9612844
申请日：1996-10-15
Applicant: IBM
Inventor： BAYER THOMAS , MEISSNER KLAUS , STOHR ROLAND , GRESCHNER JOHANN , STEINER WERNER
Abstract: The invention relates to a contact probe arrangement for electrically connecting a test system with contact pads of a device to be tested. The contact probes are located in guide grooves. The guide grooves as well as areas are provided in a plane parallel to the surface of a guide plate and are covered by a protective plate. The contact probes may bend out laterally into the respective areas. This assures a very dense contact probe array. Contact probe arrays of this type may be used, for example, for detecting opens and shorts in integrated circuits or semiconductor chips. The invention overcomes the problem of adjusting for height differences in the contact pads caused by an uneven surface of the device to be tested.
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