MICRO-MECHANICAL SENSOR FOR SHAPE MEASURING WITH AFM/ STM

    公开(公告)号:JPH1082794A

    公开(公告)日:1998-03-31

    申请号:JP14767297

    申请日:1997-06-05

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To provide a micro-mechanical sensor for measuring shape with an atomic force microscopic microscope(AFM)/a scanning tunnel microscope(STM) which has sufficient mechanical rigidity and is appropriate for measuring an extremely deep and narrow structure having a positive flank angle. SOLUTION: The micro-mechanical sensor includes a bar 2, with a tip 1 existing for interaction with a test face to be sampled on one of its ends, while a fixing block for fixing the bar 2 exists at the other end of the bar 2. The tip 1 includes a basically conic shank 1a having a dish-shaped tip part 1b.

    2.
    发明专利
    未知

    公开(公告)号:DE69427522D1

    公开(公告)日:2001-07-26

    申请号:DE69427522

    申请日:1994-04-11

    Applicant: IBM

    Abstract: To allow faithfully the quantitative interpretation of the measuring results obtained by scanning force microscopes (STM) or atomic force microscopes (AFM) the probe tips used have to be exactly characterized before and after measuring since their size and shape may change during the measuring procedure. If the tips are cone-shaped, their diameter and their cone angle have to be known accurately. Described are calibration standards for profilometers, especially for STMs and AFMs, which are of high accuracy and which allow calibration measurements without frequently removing the probe tips. Methods of producing these calibration standards are shown and examples are given for the use of the calibration standards for measuring features in the sub-nanometer range or for calibrating profilometers.

    4.
    发明专利
    未知

    公开(公告)号:DE69427522T2

    公开(公告)日:2002-03-28

    申请号:DE69427522

    申请日:1994-04-11

    Applicant: IBM

    Abstract: To allow faithfully the quantitative interpretation of the measuring results obtained by scanning force microscopes (STM) or atomic force microscopes (AFM) the probe tips used have to be exactly characterized before and after measuring since their size and shape may change during the measuring procedure. If the tips are cone-shaped, their diameter and their cone angle have to be known accurately. Described are calibration standards for profilometers, especially for STMs and AFMs, which are of high accuracy and which allow calibration measurements without frequently removing the probe tips. Methods of producing these calibration standards are shown and examples are given for the use of the calibration standards for measuring features in the sub-nanometer range or for calibrating profilometers.

    6.
    发明专利
    未知

    公开(公告)号:DE19614072A1

    公开(公告)日:1996-10-31

    申请号:DE19614072

    申请日:1996-04-09

    Applicant: IBM

    Abstract: A micromechanically manufactured read/write head (1) for charge coupled devices has a holder (2), a bearing arm (3) and a point (4) with a shaft (4a) and a front end (4b). The holder (2), the bearing arm (3) and the point form an integrated part (5) made of conductive material. The front end (4b) of the point (4) can directly contact the surface of a charge coupled device to read and write information. The shaft (4a) of the point (4) has a small diameter and is surrounded by a reinforcing sheath (6).

    7.
    发明专利
    未知

    公开(公告)号:DE68902141D1

    公开(公告)日:1992-08-20

    申请号:DE68902141

    申请日:1989-08-16

    Applicant: IBM

    Abstract: A method is described for producing micromechanical sensors for the AFM/STM profilometry, which consist of a cantilever beam with at least one tip at its end and a mounting block at the opposite, comprising: 1. bilaterally coating a wafer substrate with an insulating layer; 2. producing a mask in the insulating layer on the top side of the wafer for future trench or groove etching, and a mask in the insulating layer on the bottom side of the wafer, using a first photolithographic step and reactive ion etching: 3. producing a trench or a groove in the wafer substrate by reactive ion or anisotropic wet etching, respectively, followed by removing the insulating layer from the top side by etching: 4. coating the surface of the wafer and the trench or groove with the desired cantilever beam and tip material, respectively; 5. baring cantilever beam and tip in a second photolithographic step and dry or wet etching steps, respectively; and 6. removing the supporting wafer material from the bottom side by anisotropic wet etching through the bottom side mask. In a preferred embodiment the area on the top side of the cantilever beam corresponding to the remaining piece of wafer on the bottom side is bonded with a block of glass via 'mallory' bonding at about 300 DEG C and 1000 V. Furthermore, the surface of the wafer substrate and the trench can be coated in a first step with a material with nonconformal step coverage, and in a second step with a material with conformal step coverage. The cantilever beam and the tip are bared in the layer with conformal step coverage, and the supporting wafer and the layer with nonconformal step coverage are removed by selective etching through the bottom side mask. The invention also comprises a micromechanical sensor for AFM/STM profilometry which is micromechanically manufactured from one piece of material.

    8.
    发明专利
    未知

    公开(公告)号:DE68903950T2

    公开(公告)日:1993-07-01

    申请号:DE68903950

    申请日:1989-08-16

    Applicant: IBM

    Abstract: A method is described for producing ultrafine silicon tips for the AFM/STM profilometry comprising: 1. providing a silicon substrate and applying a silicon dioxide layer thereto; 2. producing a mask in said silicon dioxide layer by photolithography and wet or dry etching; 3. producing a tip shaft by transferring the mask pattern, produced in step 2, by reactive ion etching into the silicon substrate; 4. thinning the shaft and forming a base by isotropic wet etching; and 5. removing the mask by etching. The resulting tip shaft with a rectangular end may be pointed by argon ion milling. In a second embodiment there is an anisotropic wet etching step, prior to step 5, through the intact silicon dioxide mask, producing a negative profile of the shaft immediately below the mask. After this etching step the mask is removed by etching.

    9.
    发明专利
    未知

    公开(公告)号:DE68902141T2

    公开(公告)日:1993-02-25

    申请号:DE68902141

    申请日:1989-08-16

    Applicant: IBM

    Abstract: A method is described for producing micromechanical sensors for the AFM/STM profilometry, which consist of a cantilever beam with at least one tip at its end and a mounting block at the opposite, comprising: 1. bilaterally coating a wafer substrate with an insulating layer; 2. producing a mask in the insulating layer on the top side of the wafer for future trench or groove etching, and a mask in the insulating layer on the bottom side of the wafer, using a first photolithographic step and reactive ion etching: 3. producing a trench or a groove in the wafer substrate by reactive ion or anisotropic wet etching, respectively, followed by removing the insulating layer from the top side by etching: 4. coating the surface of the wafer and the trench or groove with the desired cantilever beam and tip material, respectively; 5. baring cantilever beam and tip in a second photolithographic step and dry or wet etching steps, respectively; and 6. removing the supporting wafer material from the bottom side by anisotropic wet etching through the bottom side mask. In a preferred embodiment the area on the top side of the cantilever beam corresponding to the remaining piece of wafer on the bottom side is bonded with a block of glass via 'mallory' bonding at about 300 DEG C and 1000 V. Furthermore, the surface of the wafer substrate and the trench can be coated in a first step with a material with nonconformal step coverage, and in a second step with a material with conformal step coverage. The cantilever beam and the tip are bared in the layer with conformal step coverage, and the supporting wafer and the layer with nonconformal step coverage are removed by selective etching through the bottom side mask. The invention also comprises a micromechanical sensor for AFM/STM profilometry which is micromechanically manufactured from one piece of material.

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