公开(公告)号：DE2855788A1

公开(公告)日：1979-07-19

申请号：DE2855788

申请日：1978-12-22

Applicant: IBM

Inventor： MATTHEWS JOHN WAUCHOPE ,  STOBBS WILLIAM MICHAEL

IPC: C30B23/02 ,  C30B25/18 ,  C30B29/40 ,  H01L21/203 ,  H01L21/363 ,  B01J17/20

Abstract: A method is described for reducing the defect density in a crystalline film grown on a substrate with which it has a substantial misfit. The principle of the method is to grow the film, not directly from the substrate, but from a layer of small islands previously deposited onto the substrate. The technique has been fully investigated for the growth of Ag (and then Au) films on NaCl, a substantial improvement in the quality of the overgrown film being obtained when an intermediate layer of Ni islands is deposited on the NaCl prior to the deposition of the Ag. It has been demonstrated that it is important for the intermediate islands to be (a) generally epitaxially aligned with the substrate, even if as a result of their misfit with the substrate, they are partially incoherent; (b) weakly bonded to the substrate so that they can move on this substrate during the deposition of the upper layer upon them; (c) approximately hemispherical and small so that elastic strains in the overgrown layer decay rapidly with distance from the island and so that the preferred adatom site density is large on the islands compared with the substrate despite a relatively low coverage of islands on the substrate of about 10%; (d) be of intermediate misfit with the substrate compared with the crystal layer to be overgrown. While these principles have been demonstrated for the NaCl/Ni island (Ag/Au) system, it is to be expected that the use of this "multiple aligned seed island" technique could be applied to a number of other systems, such as the growth of GaAs on Si or GaP on GaAs or Si on Al2O3, provided that the material and general specifications of the intermediate seed islands met those listed above.

公开(公告)号：DE2310117A1

公开(公告)日：1973-09-06

申请号：DE2310117

申请日：1973-03-01

Applicant: IBM

Inventor： MADER SIEGFRIED REINHARD DR ,  MATTHEWS JOHN WAUCHOPE

IPC: C30B25/18 ,  C30B13/34 ,  C30B15/36 ,  H01L21/205 ,  H01L21/208 ,  B01J17/22

公开(公告)号：DE2416550A1

公开(公告)日：1974-10-31

申请号：DE2416550

申请日：1974-04-05

Applicant: IBM

Inventor： BLAKESLEE A EUGENE ,  MATTHEWS JOHN WAUCHOPE

IPC: C30B25/02 ,  C23C16/44 ,  C30B19/10 ,  C30B19/12 ,  C30B29/40 ,  H01L21/20 ,  H01L21/205 ,  H01L29/15 ,  H01L31/0352 ,  H01L33/00 ,  B01J17/00

Abstract: A method of growing superlattice crystals containing alternating layers of two semiconductor materials in which misfit and threading dislocations are eliminated by growing the layers of superlattice crystal to some thickness less than that which will generate new dislocations, and matching the average lattice parameter of the superlattice with that of substrate so misfit dislocations between the superlattice and the substrate are not formed.

公开(公告)号：DE2364241A1

公开(公告)日：1974-07-11

申请号：DE2364241

申请日：1973-12-22

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  CUOMO JEROME JOHN ,  MATTHEWS JOHN WAUCHOPE

IPC: C30B13/06 ,  C30B1/02 ,  C30B1/08 ,  C30B29/06 ,  H01L21/20 ,  H01L21/205 ,  H01L21/208 ,  B01J17/12

Abstract: 1393337 Mono-crystalline films INTERNATIONAL BUSINESS MACHINES CORP 15 Nov 1973 [29 Dec 1972] 52952/73 Heading B1S Single crystal films are grown on a substrate by depositing an amorphous film of a crystallizable material on the substrate at a temperature below the crystallization temperature of the material forming the film and heating the film to propagate from a seed crystal a mono-crystalline phase throughout the material of the film. Two or more films of monocrystalline materials may be formed on the substrate. The film may in certain cases be stripped from the substrate. The seed crystal may be a substrate which promotes epitaxial deposition or a portion of such a substrate, or the seed crystal may be formed in situ from a portion of the amorphous film and propogated throughout the remainder of the film by passing a hot zone across the film from the seed crystal. The film may be applied as a pattern to the substrate which may be inert and the seed formed at a peripheral part of the pattern e.g. where it comes to a point The substrate may be a single crystal of Gd 3 Ga 5 O 12 or Sm 3 Ga 5 O 12 with an amorphous portion of SiO 2 , a quartz substrate or a plastic support from which the monocrystalline film can be stripped. The material applied to the substrate may be an amorphous layer of Y 3 Ga 1À1 Fe 3À9 O 12 by sputtering, Y 3 Fe 5 O 12 , Y 3 (GaFe) 5 O 12 , (GdY) 3 (GaFe) 5 O 12 , or amorphous SiO 2 containing boron or phosphorus as a dopant. The heating may be effected by an electron beam. As shown in the Figure a single crystal film is formed on a completely inert substrate 18, by depositing an amorphous film 20 on the substrate in such a pattern that a peripheral portion is pointed and by heating this point a seed crystal 22, is formed which is propagated across and throughout the film by passing a hot zone across the pattern from the seed crystal.