公开(公告)号：US3580732A

公开(公告)日：1971-05-25

申请号：US3580732D

申请日：1968-01-15

Applicant: IBM

Inventor： BLAKESLEE A EUGENE ,  GUKELBERGER THOMAS F JR ,  LYONS VINCENT J

IPC: C30B11/12 ,  C30B13/02 ,  C30B13/06 ,  C30B13/08 ,  B44D1/02

CPC classification number: C30B29/60 ,  C30B11/12 ,  C30B13/02 ,  C30B13/06 ,  C30B13/08 ,  Y10S148/085 ,  Y10S148/15 ,  Y10S148/152 ,  Y10S148/17

Abstract: A METHOD FOR SELECTIVELY GROWING SINGLE CRYSTAL ISLANDS IN A DIELECTRIC SUBSTRATE AND THE RESULTING STRUCTURE. THE SUBSTRATE HAS RECESSES FORMED IN ITS SURFACE TO RECEIVE BODIES THEREIN. BY APPLYING A TEMPERATURE GRADIENT ACROSS EACH OF THE BODIES THROUGOUT THE ENTIRE HEATING CYCLE, NUCLEATION OCCURS ONLY AT A BOTTOM POINT ON EACH OF THE

BODIES WHEN A VAPOR CONTAINING THE MATERIAL TO BE NUCLEATED IS PASSED OVER THE BODIES WITH THE MATERIAL OF THE BODIES BEING MOLTEN.

公开(公告)号：CA1088189A

公开(公告)日：1980-10-21

申请号：CA287548

申请日：1977-09-26

Applicant: IBM

Inventor： BLAKESLEE A EUGENE ,  HOVEL HAROLD J

IPC: H01L31/10 ,  H01L31/042 ,  H01L31/052 ,  H01L31/04

Abstract: PHOTOELECTRICAL CONVERTER A photoresponsive device for the photoelectrical conversion of energy is formed in a device body which has first and second major parallel opposed surfaces. A photoresponsive active region of semiconductor material is formed along one major surface and a thermally absorbing member is bonded to the other major surface. A region of electrically insulating material is provided which is epitaxial with the photoresponsive active region and separates the active region from the second major surface.

公开(公告)号：DE2747717A1

公开(公告)日：1978-05-11

申请号：DE2747717

申请日：1977-10-25

Applicant: IBM

Inventor： BLAKESLEE A EUGENE ,  HOVEL HAROLD JOHN ,  MCGRODDY JAMES CLEARY

IPC: H01L31/052 ,  H01L23/40 ,  H01L31/06

Abstract: A photoresponsive device comprises (a) a device body having two opposed parallel major surfaces, (b) a photoresponsive semiconductor active region along a first major surface, (c) a region of electrically insulating material epitaxial with the active regions, separating it from the second major surface, and (d) a heat sink bonded to the second major surface. Used esp. for photoelectric conversion cell arrays. The integral insulator may be much smaller than separate insulators allowing max. thermal conduction, and full use can be made of the accurate control of diffusion and vapour deposition techniques.

公开(公告)号：DE2416550A1

公开(公告)日：1974-10-31

申请号：DE2416550

申请日：1974-04-05

Applicant: IBM

Inventor： BLAKESLEE A EUGENE ,  MATTHEWS JOHN WAUCHOPE

IPC: C30B25/02 ,  C23C16/44 ,  C30B19/10 ,  C30B19/12 ,  C30B29/40 ,  H01L21/20 ,  H01L21/205 ,  H01L29/15 ,  H01L31/0352 ,  H01L33/00 ,  B01J17/00

Abstract: A method of growing superlattice crystals containing alternating layers of two semiconductor materials in which misfit and threading dislocations are eliminated by growing the layers of superlattice crystal to some thickness less than that which will generate new dislocations, and matching the average lattice parameter of the superlattice with that of substrate so misfit dislocations between the superlattice and the substrate are not formed.