公开(公告)号：US3840865A

公开(公告)日：1974-10-08

申请号：US26594372

申请日：1972-06-23

Applicant: IBM

Inventor： HOLTZBERG F ,  VON MOLNAR S ,  MAYADAS A ,  THOMPSON W

IPC: G11C11/14 ,  G01R33/06 ,  G11B5/00 ,  G11C19/08 ,  H01L27/00 ,  H01L29/00 ,  H01L29/82

CPC classification number: H01L29/82 ,  G01R33/06 ,  G11B5/00 ,  G11C19/0866 ,  H01L27/00 ,  H01L29/00

Abstract: Tunnel junctions are used to detect magnetic domains, such as bubble domains, using the change in Fermi level of one (or both) electrodes due to the magnetic field of the domain. The Fermi level shift causes the tunnel barrier height to change, leading to a change in tunneling conductance which is detectable as a current or voltage change. A simple tunnel junction in flux coupling proximity to the magnetic domains is suitable, but more sensitive detectors are made using Schottky barrier junctions, and magnetic semiconductors which exhibit conduction band splitting due to the stray field of the domains. In another embodiment, the magnetic sheet supporting the domains provides the tunnel barrier for sensing of the domains within it. Detection of submicron domains is easily achieved.

公开(公告)号：US3816845A

公开(公告)日：1974-06-11

申请号：US18322571

申请日：1971-09-23

Applicant: IBM

Inventor： CUOMO J ,  LAIBOWITZ R ,  MAYADAS A ,  ROSENBERG R

IPC: H01L27/00 ,  H01L39/00 ,  H01L39/22 ,  H01L17/00

CPC classification number: H01L39/223 ,  H01L27/00 ,  H01L27/18 ,  H01L39/228 ,  Y10S505/874

Abstract: A tunneling device, or array of such devices, having at least one electrode which is a single crystal. Tunnel devices having two or more electrodes are shown, as are thin film Josephson devices having two single crystal electrodes. The electrodes of any device can be of the same or different material, and the crystallographic orientations of these electrodes can be the same or different. Although the tunnel barrier is usually an insulator, it can be other materials, or even a vacuum. In a particular embodiment, the barrier is an epitaxial layer. Both in-line and crossed-stripe geometries are used.

Abstract translation: 具有至少一个电极是单晶的隧道装置或这种装置的阵列。 示出了具有两个或更多个电极的隧道装置，以及具有两个单晶电极的薄膜约瑟夫逊装置。 任何器件的电极可以是相同或不同的材料，并且这些电极的晶体取向可以相同或不同。 虽然隧道屏障通常是绝缘体，但它可以是其他材料，甚至是真空。 在特定实施例中，势垒是外延层。 使用在线和横条纹几何形状。

公开(公告)号：US3726776A

公开(公告)日：1973-04-10

申请号：US3726776D

申请日：1969-06-30

Applicant: IBM

Inventor： ROSENBERG R ,  CUOMO J ,  MAYADAS A

IPC: C30B23/08 ,  C23C14/40 ,  C30B23/06 ,  C23C15/00

CPC classification number: C30B23/06 ,  Y10S505/816

Abstract: A SPUTTERING PROCESS FOR DEPOSITING THIN, SINGLE CRYSTAL FILMS HAVING BULK PROPERTIES. THE PROCESS IS CHARACTERIZED BY AN EXTREMELY LOW PRE-SPUTTERING TIME, A SUBSTRATE BIAS OF AT LEAST APPROXIMATELY -30 VOLTS, AND LOW DEPOSITION TEMPERATURES. BOTH RF AND DC SPUTTERING ARE USED. IMPROVIDED THIN FILMS HAVING BULK PROPERTIES ARE PRODUCED. SAID THIN FILMS IN PARTICULAR BEING SUPERCONDUCTING MATERIALS, SUCH AS NIOBIUM. THE FILMS HAVE EXCELLENT CHEMICAL PURITY AND LOW DEFECT DENSITY, AND ARE SINGLE CRYSTALS.