公开(公告)号：JP2000208499A

公开(公告)日：2000-07-28

申请号：JP37251599

申请日：1999-12-28

Applicant: IBM

Inventor： MICHAEL AAMAKOSUTO ,  SANDRA G MARUHOTORA ,  TINA WAGNER ,  RICHARD WISE

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/336 ,  H01L21/60 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming an improved self-aligned spacer. SOLUTION: A conductive gate structure is provided on a semiconductor substrate 1 and a first dielectric gate cap material layer and a second dielectric material layer 5 are provided thereon. Subsequently, a region 6 of high dopant level is provided on the second dielectric material layer 5 for fabricating a self-aligned spacer. Selective etching takes place through the dopant and a self-aligned conductive spacer is defined.