公开(公告)号：JP2001332553A

公开(公告)日：2001-11-30

申请号：JP2001098276

申请日：2001-03-30

Applicant: IBM

Inventor： JAMES W ADKINSON ,  BALLANTINE ARNE W ,  MATTHEW D GULAGER ,  PETER J GASE ,  GILBERT JEFFREY D ,  SHU-JEN JEN ,  DANA K JOHNSON ,  ROBB A JOHNSON ,  MILES GLEN L ,  PETERSON KIRK D ,  JAMES J TOOMEY ,  TINA WAGNER

IPC: C23C16/42 ,  H01L21/02 ,  H01L21/28 ,  H01L21/318 ,  H01L21/331 ,  H01L21/822 ,  H01L21/8238 ,  H01L27/04 ,  H01L27/092 ,  H01L29/73 ,  H01L29/737

Abstract: PROBLEM TO BE SOLVED: To provide a nitride film that has characteristics being more superior than a conventional nitride film obtained by the conventional PECVD or LPCVD onto a semiconductor substrate. SOLUTION: In the manufacturing process of a semiconductor device, a method is indicated, where the method includes a step for exposing the surface of the substrate to a rapid thermochemical vapor deposition(RTCVD). The nitride film obtained by the method has an etching-resistant property and high conformality, and an excellent barrier layer can be provided without changing the structure and processes of a conventional semiconductor device.

公开(公告)号：JP2000208499A

公开(公告)日：2000-07-28

申请号：JP37251599

申请日：1999-12-28

Applicant: IBM

Inventor： MICHAEL AAMAKOSUTO ,  SANDRA G MARUHOTORA ,  TINA WAGNER ,  RICHARD WISE

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/336 ,  H01L21/60 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming an improved self-aligned spacer. SOLUTION: A conductive gate structure is provided on a semiconductor substrate 1 and a first dielectric gate cap material layer and a second dielectric material layer 5 are provided thereon. Subsequently, a region 6 of high dopant level is provided on the second dielectric material layer 5 for fabricating a self-aligned spacer. Selective etching takes place through the dopant and a self-aligned conductive spacer is defined.