公开(公告)号：JP2000340552A

公开(公告)日：2000-12-08

申请号：JP2000124026

申请日：2000-04-25

Applicant: IBM

Inventor： DAINE C BOYD ,  BURNS STUART M ,  HUSSEIN I HANAPHY ,  WOLDEMAR W KOKON ,  WILLIAM C WILEY ,  RICHARD WISE

IPC: H01L29/417 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/336 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To pattern a silicon nitride layer so that it has a high aspect ratio by etching an exposed part of the silicon nitride layer with a high density plasma generated by exciting an etchant gas which includes a polymerizing agent, a source of hydrogen, an oxidant, and a noble gas diluent, to form a trench. SOLUTION: An etchant gas includes a polymerizing agent, a source of hydrogen, an oxidant, and a noble gas diluent. The polymerizing agent is a precursor for causing formation of passivation layer and is preferably selected from among CF4, C2F6, and C3F8. The source of hydrogen is preferably selected from among CHF3, CH2F2, CH3F, and H2, and the oxidant is selected among CO, CO2, and O2. This etchant gas is excited to generate a high density plasma. A part of a silicon nitride layer 131 is exposed by an etch window 133 to etch the exposed part of the silicon nitride layer 131 with the plasma, to form a trench which extends to a silicon oxide layer.

公开(公告)号：JP2004214630A

公开(公告)日：2004-07-29

申请号：JP2003396388

申请日：2003-11-26

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： RICHARD WISE ,  MARK C HEIKY ,  PANDA SIDDHARTHA ,  CHEN BOMY A

IPC: H05H1/46 ,  C23C16/513 ,  H01J37/32 ,  H01L21/00 ,  H01L21/205 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01J37/32192 ,  H01J37/32357 ,  H01L21/308

Abstract: PROBLEM TO BE SOLVED: To provide a system for effectively separating the reactivity of a gaseous phase reactant and the chemical reaction of a wafer surface. SOLUTION: A processing system, based on previously loaded plasma, is provided with a preliminary reaction plasma processing chamber, a power source connected to the preliminary reaction plasma processing chamber so as to drive the chamber and a wafer plasma processing chamber connected to the preliminary reaction plasma processing chamber through fluid. The preliminary reaction plasma processing chamber is constituted so as to generate reaction radicals, by subjecting to chemical reaction based on the plasma of a reaction substance. The wafer plasma processing chamber is constituted so as to allow reaction radicals to react with the seeds on the surface of a wafer arranged in the wafer plasma processing chamber. Another example includes a method for processing a wafer in a plasma environment, pre-loading a reactive gaseous flow and previously preventing the erosion of a wafer mask or an etching stop layer. COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2000208499A

公开(公告)日：2000-07-28

申请号：JP37251599

申请日：1999-12-28

Applicant: IBM

Inventor： MICHAEL AAMAKOSUTO ,  SANDRA G MARUHOTORA ,  TINA WAGNER ,  RICHARD WISE

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/336 ,  H01L21/60 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming an improved self-aligned spacer. SOLUTION: A conductive gate structure is provided on a semiconductor substrate 1 and a first dielectric gate cap material layer and a second dielectric material layer 5 are provided thereon. Subsequently, a region 6 of high dopant level is provided on the second dielectric material layer 5 for fabricating a self-aligned spacer. Selective etching takes place through the dopant and a self-aligned conductive spacer is defined.

公开(公告)号：SG98375A1

公开(公告)日：2003-09-19

申请号：SG200002004

申请日：2000-04-07

Applicant: IBM

Inventor： DIANE C BOYD ,  RICHARD WISE ,  WILLIAM C WILLIE ,  WALDERMAR W KOCON ,  STUART M BURNS ,  HUSSEIN I HANAFI

IPC: H01L29/417 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/336 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/78 ,  B08B7/00 ,  H01L21/00