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    2.
    发明专利
    未知

    公开(公告)号：FR2286419A1

    公开(公告)日：1976-04-23

    申请号：FR7525149

    申请日：1975-08-07

    Applicant: IBM

    Inventor： GIPSTEIN EDWARD ,  MOREAU WAYNE M ,  NEED OMAR U III

    IPC: G03F7/039 ,  G03F7/00

    Abstract: 1500403 Sensitized olefin-sulphone polymers INTERNATIONAL BUSINESS MACHINES CORP 21 May 1975 [26 Sept 1974] 21838/75 Addition to 1421805 Heading G2C A radiation sensitive positive resist comprises an olefin-sulphone polymer sensitized by a charge transfer agent or a free radical source. The polymer is preferably poly (hexene-1-sulphone) and sensitizers include azulene, 2, 4, 7-trinitrofluorenone, fluorene, diphenylamine, p-nitroaniline, CCl4, CBr4, Cl4, phenyl disulphide, azobenzene, and poly(alpha-chloromethylacrylate). The resist is degraded on exposure to U.V., visible light, x-rays, gamma radiation and low energy electron beams of from 10 to 30 KeV. The exposed areas of the polymer are removed using a solvent such as 1,4- dichlorobutane.

    A magnetoresistive spin valve sensor and magnetic storage system incorporation such a sensor
    4.
    发明专利
    A magnetoresistive spin valve sensor and magnetic storage system incorporation such a sensor 未知

    公开(公告)号：SG42851A1

    公开(公告)日：1997-10-17

    申请号：SG1996000141

    申请日：1994-01-11

    Applicant: IBM

    Inventor： GURNEY BRUCE ALVIN ,  HEIM DAVID EUGENE ,  LEFAKIS HARALAMBOS ,  NEED OMAR U III ,  SPERIOSU VIRGIL SIMON ,  WILHOIT DENNIS RICHARD

    IPC: G01R33/09 ,  G11B5/00 ,  G11B5/39 ,  H01F10/08 ,  H01F10/30 ,  H01F10/32 ,  H01L43/08 ,  G01R33/06

    Abstract: A magnetoresistive read sensor based on the spin valve effect is described, in which a component of the read element resistance varies as the cosine of the angle between the magnetization directions in two adjacent magnetic layers. The sensor read element includes two adjacent ferromagnetic layers separated by a nonmagnetic metallic layer. A layer of nonmagnetic electrically conductive material is deposited adjacent to and in contact with at least one of the ferromagnetic layers (referred to as a filter layer) to form a back or conduction layer which provides a low resistance path for conduction electrons transmitted through the adjacent filter layer. The thickness of the filter layer is selected such that it effectively blocks conduction electrons having spins antiparallel to the direction of magnetization in the filter layer while allowing conduction electrons with parallel spins to be transmitted through the layer into the adjacent back layer. The magnetization of the filter layer is free to rotate in response to an applied magnetic field thereby effectively varying the electrically resistance to conduction electrons in the back/filter layer. The thickness of the back layer is selected to optimize the sensor parameters being measured and is in a range of about 4.0A to 1000A.

    5.
    发明专利
    未知

    公开(公告)号：FR2299665A1

    公开(公告)日：1976-08-27

    申请号：FR7538564

    申请日：1975-12-09

    Applicant: IBM

    Inventor： GIPSTEIN EDWARD ,  NEED OMAR U III ,  MOREAU WAYNE M

    IPC: B41C1/00 ,  C08J3/28 ,  G03F7/039 ,  H01L21/027 ,  G03C1/495 ,  C08F220/10 ,  H01L21/312

    Abstract: 1515330 Electron sensitive polymers INTERNATIONAL BUSINESS MACHINES CORP 5 Dec 1975 [29 Jan 1975] 49960/75 Heading G2C Positive resist masks are formed by exposing a supported film of a non-crosslinked polymeric material to electron beam radiation in a predetermined pattern so as to degrade the polymeric material in the exposed areas, and removing the degraded products in the exposed areas. The polymeric material used is selected from (1) polyalkyl methacrylates and copolymers of alkyl methacrylates with halogen - or cyano - containing monomers and (2) post halogenated derivatives of the polymers in (1). The coated polymers may be baked prior to exposure and also after development.

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