公开(公告)号：EP0698230A4

公开(公告)日：1995-10-24

申请号：EP94900495

申请日：1993-10-29

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM ROSS ,  BREYTA GREGORY ,  DIPIETRO RICHARD ANTHONY ,  ITO HIROSHI ,  KNORS CHRISTOPHER JOHN ,  KWONG RANEE WAI-LING ,  MIURA STEVE SEIICHI ,  MONTGOMERY MELVIN WARREN ,  MOREAU WAYNE MARTIN ,  SACHDEV HARBANS SINGH ,  WELSH KEVIN MICHAEL

IPC: G03F7/004 ,  G03F7/039 ,  H01L21/027 ,  G03C5/16 ,  G03F7/029

CPC classification number: G03F7/039

Abstract: Resists for use in ultraviolet, electron beam and x-ray exposure devices comprising a polymeric or molecular composition the solubility of which is dependent upon the presence of acid removable protecting groups and a sulfonic acid precursor which generates a strong acid upon exposure to such radiation. The preferred sulfonic acid precursors are triflate esters or benzenesulfonyloxy esters of N-hydroxyimides.

公开(公告)号：JP2003109431A

公开(公告)日：2003-04-11

申请号：JP2002184636

申请日：2002-06-25

Applicant: IBM

Inventor： JOHN M COTTE ,  MCCULLOUGH KENNETH JOHN ,  MOREAU WAYNE MARTIN ,  PETRARCA KEVIN ,  SIMONS JOHN P ,  TAFT CHARLES J ,  VOLANT RICHARD

IPC: H01B3/30 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provide a new kind of high polymer material having a lowered dielectric constant, properly applicable to an electric assembly using a small semiconductor element recently developed. SOLUTION: This high polymer material is formed by forcing a polymer having a low dielectric constant into contact with liquid or supercritical carbon dioxide under a thermodynamic condition to maintain the carbon dioxide in a liquid or supercritical state. Thereby, a porous product is formed. Subsequently, the high polymer material having a substantially lowered dielectric constant can be obtained by changing the thermodynamic condition to a working environment wherein the carbon dioxide escapes from fine holes and is replaced with air.

公开(公告)号：JP2002225000A

公开(公告)日：2002-08-13

申请号：JP2001369501

申请日：2001-12-04

Applicant: IBM

Inventor： JOHN MICHAEL COTT ,  MCCULLOUGH KENNETH JOHN ,  MOREAU WAYNE MARTIN ,  SIMONS JOHN P ,  TAFT CHARLES J

IPC: B81C1/00 ,  B05D1/18 ,  B82B3/00 ,  C23C18/00

Abstract: PROBLEM TO BE SOLVED: To provide a method for sticking a thin film to a nanometer structure. SOLUTION: The method is to stick the thin film to the nanometer structure preparing an aerogel material or a coating that can be formed as a metal seed layer. The coating is mixed with a supercritical composition to form a supercritical coating composition. The supercritical coating composition is stuck to the nanometer structure under a supercritical condition. Then the supercritical condition is eliminated and the supercritical composition is removed to solidify the coating into a solid thin film.

公开(公告)号：JP2002222786A

公开(公告)日：2002-08-09

申请号：JP2001388283

申请日：2001-12-20

Applicant: IBM

Inventor： JOHN MICHAEL COTT ,  DELEHANTY DONALD J ,  MCCULLOUGH KENNETH JOHN ,  MOREAU WAYNE MARTIN ,  SIMONS JOHN P ,  TAFT CHARLES J ,  VOLANT RICHARD P

IPC: H01L21/304 ,  B08B7/00 ,  C11D1/00 ,  C11D3/20 ,  C11D3/43 ,  C23G5/00 ,  H01L21/3105 ,  H01L21/321

Abstract: PROBLEM TO BE SOLVED: To provide a process for removing residual slurry which is generated by chemical mechanical polishing of a workpiece. SOLUTION: This process includes a step for removing the residual slurry resulting from the chemical mechanical polishing which uses composition containing mixture of supercritical fluid, which contains carbon dioxide, co- solvent and a surfactant. It is considered that the supercritical fluid must satisfy two conditions. Firstly, residual slurry removing fluid whose surface tension is sufficiently low must be used, in order to permeate as far as very narrow apertures. Secondly, the fluid must be able to neutralize electric charges applied to slurry particles, in order not only to permeate as far as the narrow apertures but also to remove the residual slurry particles.

公开(公告)号：DE69227210T2

公开(公告)日：1999-06-02

申请号：DE69227210

申请日：1992-02-11

Applicant: IBM

Inventor： CORNETT KATHLEEN MARIE ,  HEFFERON GEORGE JOSEPH ,  MONTGOMERY MELVIN WARREN ,  MOREAU WAYNE MARTIN

IPC: G03F7/004 ,  G03F7/022 ,  G03F7/16 ,  H01L21/027

公开(公告)号：DE2536299A1

公开(公告)日：1976-04-08

申请号：DE2536299

申请日：1975-08-14

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  MOREAU WAYNE MARTIN ,  NEED III OMAR U

IPC: H05K3/00 ,  G03F7/039 ,  H01L21/027 ,  G03F7/10 ,  G03F1/00

公开(公告)号：DE69514171D1

公开(公告)日：2000-02-03

申请号：DE69514171

申请日：1995-07-13

Applicant: IBM

Inventor： FAHEY JAMES THOMAS ,  HERBST BRIAN WAYNE ,  LINEHAN LEO LAWRENCE ,  MOREAU WAYNE MARTIN ,  SPINILLO GARY THOMAS ,  WELSH KEVIN MICHAEL ,  WOOD ROBERT LAVIN

IPC: G03F7/004 ,  C08G65/40 ,  C08G67/00 ,  C09D171/00 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027

Abstract: A co-polymer of benzophenone and bisphenol A has been shown to have DUV absorption properties. Therefore, the co-polymer has particular utility as an antireflective coating in microlithography applications. Incorporating anthracene into the co-polymer backbone enhances absorption at 248 nm. The endcapper used for the co-polymer can vary widely depending on the needs of the user and can be selected to promote adhesion, stability, and absorption of different wavelengths.

公开(公告)号：DE69125745T2

公开(公告)日：1997-11-13

申请号：DE69125745

申请日：1991-01-25

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM ROSS ,  KNORS CHRISTOPHER JOHN ,  MONTGOMERY MELVIN WARREN ,  MOREAU WAYNE MARTIN ,  WELSH KEVIN MICHAEL

IPC: G03F7/004 ,  G03F7/029 ,  G03F7/039 ,  H01L21/027 ,  H01L21/30

公开(公告)号：DE2535423A1

公开(公告)日：1976-04-15

申请号：DE2535423

申请日：1975-08-08

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  MOREAU WAYNE MARTIN ,  NEED III OMAR U

IPC: G03F7/039 ,  G03F7/38 ,  G03C5/00 ,  G03F7/10

Abstract: The prodn. of an image from a radiation-sensitive, thermostable, positive resist with high resolving power comprises (a) applying a polycarbonate film to a substrate; (b) exposing the film selectively; and (c) removing the degradation prods. from the exposed areas with a solvent. Exposure pref. is carried out with a low energy electron beam with an acceleration potential of 10-30 keV and a charge density of 3 x 10-6 to 1 C/cm2. A thin metal film can be deposited on the polycarbonate film after exposure and before development with the solvent. Used esp. in the prodn. of microcircuits of high density. Electron-sensitive resist materials are used which are stable up to 400 degrees C and give esp. good results in the metal lift-off process.

公开(公告)号：DE2428812A1

公开(公告)日：1975-01-23

申请号：DE2428812

申请日：1974-06-14

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  CORTELLINO CHARLES ANTHONY ,  MOREAU WAYNE MARTIN ,  WAPPINGERS FALLS N Y

IPC: G03F7/038 ,  G03F7/20 ,  G03G15/05 ,  H01L21/027 ,  H05K3/06 ,  G03F7/00 ,  G03F1/00