公开(公告)号：WO2011080023A3

公开(公告)日：2011-11-17

申请号：PCT/EP2010068813

申请日：2010-12-03

Applicant: IBM ,  KHOJASTEH MAHMOUD ,  TOTIR GEORGE GABRIEL ,  AFZALI-ARDAKANI ALI ,  NUNES RONALD WAYNE

Inventor： KHOJASTEH MAHMOUD ,  TOTIR GEORGE GABRIEL ,  AFZALI-ARDAKANI ALI ,  NUNES RONALD WAYNE

IPC: H01L21/311 ,  G03F7/42

CPC classification number: H01L21/311 ,  G03F7/40 ,  G03F7/423

Abstract: A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.

Abstract translation: 提供了一种可用于汽提离子注入光刻胶的旋涂配方，其包括含有至少一个酸性官能团的水溶性聚合物的水溶液和至少一种含镧系金属的氧化剂。 将旋涂制剂施加到离子注入的光致抗蚀剂上并烘烤以形成改性的光致抗蚀剂。 改性光致抗蚀剂可溶于含水，酸或有机溶剂。 因此，上述溶剂之一可以用于完全剥离离子注入的光致抗蚀剂以及可能存在的任何光致抗蚀剂残余物。 冲洗步骤可以跟随改性光致抗蚀剂的剥离。

公开(公告)号：DE69618386D1

公开(公告)日：2002-02-14

申请号：DE69618386

申请日：1996-05-07

Applicant: TOSHIBA KAWASAKI KK ,  IBM

Inventor： LICATA THOMAS JOHN ,  NUNES RONALD WAYNE ,  OKAZAKI MOTOYA

IPC: H01L23/538 ,  H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/768

Abstract: A process for forming a dual-damascene interconnect employs a spun-on organic layer above an interlayer dielectric having a set of apertures for vias that forms tapered regions about the apertures without penetrating the apertures. The slope of the tapered regions is transferred during the etching process to form self-aligned tapered vias. A silicon substrate (10) over which an oxide or other insulating layer (110) is first formed. A layer first level of metal interconnect (120) and a layer of SiO2 (130) are formed insequent onto the structure, then an aperture (140) extending down to and stopping on metal interconnect layer is formed. Now an anti-reflective coating (ARC) layer (135) is put down and spun onto the structure. Unexpectedly, the surface tension of the ARC layer prevents the ARC material from getting into the aperture but forms a tapered rim at its edge (as illustrated). After baking the ARC layer, a layer of resist (150) is deposited, exposed, and developed to form a novel aperture (142). An non-isotropic etch using CF4/O2 chemistry as the etching gas is performed, then both the resist and ARC layer are stripped. The result is an aperture having a tapered bottom selection which, when filled with metal (147/147) and polished to become level with the top of SiO2 layer produces the chemical Damascene interconnect.

公开(公告)号：GB2488653A

公开(公告)日：2012-09-05

申请号：GB201203506

申请日：2010-12-03

Applicant: IBM

Inventor： KHOJASTEH MAHMOUD ,  TOTIR GEORGE GABRIEL ,  AFZALIARDAKANI ALI ,  NUNES RONALD WAYNE

IPC: H01L21/311 ,  G03F7/40 ,  G03F7/42

Abstract: A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.

公开(公告)号：GB2368190B

公开(公告)日：2005-02-23

申请号：GB0109462

申请日：2001-04-18

Applicant: IBM

Inventor： BREEN TRICIA L ,  FRYER PETER ,  NUNES RONALD WAYNE ,  ROTHWELL MARY ELIZABETH

IPC: B41K3/00 ,  C01G15/00 ,  C01G19/00 ,  C23C30/00 ,  G02F1/1333 ,  G03F7/00 ,  G03F7/16 ,  B05D1/28 ,  C23C16/04

Abstract: Microcontact printing to pattern a self-assembled monolayer (SAM) of an alkanephosphonic acid on a film of indium zinc oxide (IZO). The SAM is robust enough to protect the undelying IZO from wet chemical etching, and thus defines a pattern of IZO on the substrate. In the microcontact printing process, a patterned, elastomeric stamp is inked with a solution of octadecylphosphonic acid and brought into conformal contact with the IZO surface. A SAM of alkanesulfonic acid forms where the stamp and the surface make contact; the rest remains underivatized. The stamp is then removed from the surface. Etching the sample in aqueous oxalic acid removes the unprotected areas, while the areas protected by the SAM remain in place.

公开(公告)号：GB2368190A

公开(公告)日：2002-04-24

申请号：GB0109462

申请日：2001-04-18

Applicant: IBM

Inventor： BREEN TRICIA L ,  FRYER PETER ,  NUNES RONALD WAYNE ,  ROTHWELL MARY ELIZABETH

IPC: B41K3/00 ,  C01G15/00 ,  C01G19/00 ,  C23C30/00 ,  G02F1/1333 ,  G03F7/00 ,  G03F7/16 ,  B05D1/28 ,  C23C16/04

Abstract: A method of patterning a metal oxide surface (25) of a substrate (27) by microcontact printing comprises providing a stamp (20) with a surface (21) with at least one indentation (22), coating the stamp with a molecular species (24) terminating in a functional group which is capable of reacting with the metal oxide surface, positioning the coated stamp on the surface of the metal oxide (25) such that the functional group contacts and reacts with at least a portion of the metal oxide surface to form a bond therebetween, and removing the stamp to obtain a self assembled monolayer (SAM). The oxide film surface may be indium zinc oxide or indium tin oxide and the non contacted portion of the film is removed after the patterning stage by etching the exposed portion of the IZO or ITO film.

公开(公告)号：GB2488653B

公开(公告)日：2014-03-26

申请号：GB201203506

申请日：2010-12-03

Applicant: IBM

Inventor： KHOJASTEH MAHMOUD ,  TOTIR GEORGE GABRIEL ,  AFZALI-ARDAKANI ALI ,  NUNES RONALD WAYNE

IPC: H01L21/311 ,  G03F7/40 ,  G03F7/42

Abstract: A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.

公开(公告)号：DE112010004081B4

公开(公告)日：2013-08-14

申请号：DE112010004081

申请日：2010-12-03

Applicant: IBM

Inventor： TOTIR GEORGE GABRIEL ,  KHOJASTEH MAHMOUD ,  AFZALI-ARDAKANI ALI ,  NUNES RONALD WAYNE

IPC: H01L21/311 ,  G03F7/42 ,  H01L21/312

Abstract: Verfahren mit Entfernen eines ionenimplantierten Fotolackmaterials von einem Halbleitersubstrat, wobei das Verfahren die folgenden Schritte umfasst: Bereitstellen eines strukturierten Fotolacks auf einer Oberfläche einer Halbleiterstruktur, wobei sich in dem strukturierten Fotolack mindestens eine Öffnung befindet, die eine obere Oberfläche eines Halbleitersubstrats der Halbleiterstruktur freilegt; Einlagern von Dotanden in die freiliegende obere Oberfläche des Halbleitersubstrats sowie in den strukturierten Fotolack durch Ionenimplantation; Bilden eines Polymerfilms, der ein Oxidationsmittel enthält, zumindest auf freiliegenden oberen Oberflächen des ionenimplantierten und strukturierten Fotolacks; Durchführen eines Temperschrittes, der eine Reaktion zwischen dem Polymerfilm und dem ionenimplantierten und strukturierten Fotolack verursacht, bei welcher ein modifizierter strukturierter Fotolack gebildet wird, der in wässrigen, sauren oder organischen Lösemitteln löslich ist; und Entfernen des veränderten strukturierten Fotolacks von der Halbleiterstruktur unter Verwendung eines wässrigen, sauren oder organischen Lösemittels.

公开(公告)号：DE112010004081T5

公开(公告)日：2012-11-15

申请号：DE112010004081

申请日：2010-12-03

Applicant: IBM

Inventor： TOTIR GEORGE GABRIEL ,  KHOJASTEH MAHMOUD ,  AFZALI-ARDAKANI ALI ,  NUNES RONALD WAYNE

IPC: H01L21/311 ,  G03F7/42

Abstract: Es wird eine Rezeptur für die Rotationsbeschichtung bereitgestellt, die zum Ablösen eines ionenimplantierten Fotolacks geeignet ist und eine wässrige Lösung eines wasserlöslichen Polymers, welches mindestens eine saure funktionelle Gruppe und mindestens ein Oxidationsmittel enthält, beinhaltet, wobei Letzteres ein Metall der Lanthanidengruppe enthält. Die Rezeptur für die Rotationsbeschichtung wird auf einen ionenimplantierten Fotolack aufgebracht und getempert, um einen veränderten Fotolack zu bilden. Der veränderte Fotolack ist in wässrigen, sauren oder organischen Lösemitteln löslich. Demgemäß kann eines der oben erwähnten Lösemittel zum vollständigen Ablösen des ionenimplantierten Fotolacks sowie aller möglicherweise vorhandenen Fotolackrückstände verwendet werden. An das Ablösen des veränderten Fotolacks kann sich ein Spülschritt anschließen.

公开(公告)号：DE69618386T2

公开(公告)日：2002-09-26

申请号：DE69618386

申请日：1996-05-07

Applicant: TOSHIBA KAWASAKI KK ,  IBM

Inventor： LICATA THOMAS JOHN ,  NUNES RONALD WAYNE ,  OKAZAKI MOTOYA

IPC: H01L23/538 ,  H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/768

Abstract: A process for forming a dual-damascene interconnect employs a spun-on organic layer above an interlayer dielectric having a set of apertures for vias that forms tapered regions about the apertures without penetrating the apertures. The slope of the tapered regions is transferred during the etching process to form self-aligned tapered vias. A silicon substrate (10) over which an oxide or other insulating layer (110) is first formed. A layer first level of metal interconnect (120) and a layer of SiO2 (130) are formed insequent onto the structure, then an aperture (140) extending down to and stopping on metal interconnect layer is formed. Now an anti-reflective coating (ARC) layer (135) is put down and spun onto the structure. Unexpectedly, the surface tension of the ARC layer prevents the ARC material from getting into the aperture but forms a tapered rim at its edge (as illustrated). After baking the ARC layer, a layer of resist (150) is deposited, exposed, and developed to form a novel aperture (142). An non-isotropic etch using CF4/O2 chemistry as the etching gas is performed, then both the resist and ARC layer are stripped. The result is an aperture having a tapered bottom selection which, when filled with metal (147/147) and polished to become level with the top of SiO2 layer produces the chemical Damascene interconnect.