公开(公告)号：EP2013659A4

公开(公告)日：2011-12-07

申请号：EP07760816

申请日：2007-04-18

Applicant: IBM

Inventor： CHEN KUANG-JUNG ,  KHOJASTEH MAHMOUD ,  KWONG RANEE WAI-LING ,  LAWSON MARGARET C ,  LI WENJIE ,  PATEL KAUSHAL S ,  VARANASI PUSHKARA R

IPC: G03F7/09 ,  C08F220/28

CPC classification number: G03F7/091 ,  C08F220/28 ,  C08F222/40 ,  C08F232/08 ,  Y10S430/151

公开(公告)号：EP2510538A4

公开(公告)日：2014-03-26

申请号：EP10836729

申请日：2010-12-10

Applicant: ADVANCED TECH MATERIALS ,  IBM

Inventor： AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  TOTIR GEORGE GABRIEL ,  NUNES RONALD W

IPC: H01L21/311 ,  G03F7/42

CPC classification number: H01L21/31133 ,  G03F7/423

公开(公告)号：EP1825325A4

公开(公告)日：2010-05-26

申请号：EP05857596

申请日：2005-11-30

Applicant: IBM

Inventor： HUANG WU-SONG ,  BURNS SEAN ,  KHOJASTEH MAHMOUD

IPC: G03F7/09 ,  G03C1/76

CPC classification number: G03F7/094 ,  G03F7/091

公开(公告)号：JPH10182989A

公开(公告)日：1998-07-07

申请号：JP25249297

申请日：1997-09-17

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM ROSS ,  FAHEY JAMES THOMAS ,  HEFFERON GEORGE JOSEPH ,  HUANG WU-SONG ,  JAGANNATHAN PREMLATHA ,  KATNANI AHMAD DAUOD ,  KHOJASTEH MAHMOUD ,  KWONG RANEE WAI-LING ,  KIM YAN LEE ,  SACHDEV HARBANS SINGH ,  SACHDEV KRISHNA GANDI ,  SOORIYAKUMARAN RATNAM ,  WOOD ROBERT LAVIN

IPC: C08L25/02 ,  C08L61/10 ,  C08L101/00 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To make a composition hardly receive a disadvantageous reaction with environmental contaminants, enhance the tolerance for variable or long delay between exposure and printing after the exposure or printing after the exposure and development, eliminate any deterioration in a profile, stabilize the solubility in solvents and impart storage life thereof in a solution for a long period at ambient temperature. SOLUTION: This microlithographic composition comprises a composition, containing a film-forming polymer substituted at the o-position with an acid unstable compound containing a ketal component in at least a part of a chemically bound recurring hydroxyl group and an acid-generating compound, capable of forming an acid by exposure to actinic radiations and chemically bound to the polymer and used as the microlithographic composition. The acid generated by the exposure initiates the cleavage of at least a part of the compound containing the ketal component and the exposed composition becomes selectively more soluble in an aqueous base as compared with an unexposed composition.

公开(公告)号：WO2011080023A3

公开(公告)日：2011-11-17

申请号：PCT/EP2010068813

申请日：2010-12-03

Applicant: IBM ,  KHOJASTEH MAHMOUD ,  TOTIR GEORGE GABRIEL ,  AFZALI-ARDAKANI ALI ,  NUNES RONALD WAYNE

Inventor： KHOJASTEH MAHMOUD ,  TOTIR GEORGE GABRIEL ,  AFZALI-ARDAKANI ALI ,  NUNES RONALD WAYNE

IPC: H01L21/311 ,  G03F7/42

CPC classification number: H01L21/311 ,  G03F7/40 ,  G03F7/423

Abstract: A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.

Abstract translation: 提供了一种可用于汽提离子注入光刻胶的旋涂配方，其包括含有至少一个酸性官能团的水溶性聚合物的水溶液和至少一种含镧系金属的氧化剂。 将旋涂制剂施加到离子注入的光致抗蚀剂上并烘烤以形成改性的光致抗蚀剂。 改性光致抗蚀剂可溶于含水，酸或有机溶剂。 因此，上述溶剂之一可以用于完全剥离离子注入的光致抗蚀剂以及可能存在的任何光致抗蚀剂残余物。 冲洗步骤可以跟随改性光致抗蚀剂的剥离。

公开(公告)号：WO2011072188A3

公开(公告)日：2011-09-15

申请号：PCT/US2010059800

申请日：2010-12-10

Applicant: ADVANCED TECH MATERIALS ,  IBM ,  AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  NUNES RONALD W ,  TOTIR GEORGE GABRIEL

Inventor： AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  TOTIR GEORGE GABRIEL

IPC: H01L21/3063

CPC classification number: H01L21/31133 ,  G03F7/423

Abstract: Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium and at least one additional oxidant. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate. The at least one additional oxidant may be a manganese, ruthenium, and/or osmium-containing compound.

Abstract translation: 提出了用于去除掩模材料（例如光致抗蚀剂）的方法以及通过去除掩模材料形成的电子器件。 例如，用于去除掩蔽材料的方法包括使掩蔽材料与包含铈和至少一种另外的氧化剂的溶液接触。 铈可以包含在盐中。 盐可以是硝酸铈铵。 该至少一种另外的氧化剂可以是锰，钌和/或含锇化合物。

公开(公告)号：WO2007121456A3

公开(公告)日：2008-03-27

申请号：PCT/US2007066841

申请日：2007-04-18

Applicant: IBM ,  CHEN KUANG-JUNG ,  KHOJASTEH MAHMOUD ,  KWONG RANEE WAI-LING ,  LAWSON MARGARET C ,  LI WENJIE ,  PATEL KAUSHAL S ,  VARANASI PUSHKARA R

Inventor： CHEN KUANG-JUNG ,  KHOJASTEH MAHMOUD ,  KWONG RANEE WAI-LING ,  LAWSON MARGARET C ,  LI WENJIE ,  PATEL KAUSHAL S ,  VARANASI PUSHKARA R

IPC: G03C1/00

CPC classification number: G03F7/091 ,  C08F220/28 ,  C08F222/40 ,  C08F232/08 ,  Y10S430/151

Abstract: The present invention discloses an antireflective coating composition for applying between a substrate surface and a positive photoresist composition. The antireflective coating composition is developable in an aqueous alkaline developer. The antireflective coating composition comprises a polymer, which comprises at least one monomer unit containing one or more moieties selected from the group consisting of a lactone, maleimide, and an N-alkyl maleimide; and at least one monomer unit containing one or more absorbing moieties. The polymer does not comprise an acid labile group. The present invention also discloses a method of forming and transferring a relief image by using the inventive antireflective coating composition in photolithography.

Abstract translation: 本发明公开了一种用于在基材表面和正性光致抗蚀剂组合物之间施加的抗反射涂料组合物。 抗反射涂料组合物可在含水碱性显影剂中显影。 抗反射涂料组合物包括聚合物，其包含至少一种含有一个或多个选自内酯，马来酰亚胺和N-烷基马来酰亚胺的部分的单体单元; 和含有一个或多个吸收部分的至少一个单体单元。 聚合物不包含酸不稳定基团。 本发明还公开了一种通过在光刻中使用本发明的抗反射涂料组合物来形成和转印浮雕图像的方法。

公开(公告)号：SG181642A1

公开(公告)日：2012-07-30

申请号：SG2012042941

申请日：2010-12-10

Applicant: ADVANCED TECH MATERIALS ,  IBM

Inventor： AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  NUNES RONALD W ,  TOTIR GEORGE GABRIEL

Abstract: Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium and at least one additional oxidant. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate. The at least one additional oxidant may be a manganese, ruthenium, and/or osmium-containing compound.

公开(公告)号：GB2488653A

公开(公告)日：2012-09-05

申请号：GB201203506

申请日：2010-12-03

Applicant: IBM

Inventor： KHOJASTEH MAHMOUD ,  TOTIR GEORGE GABRIEL ,  AFZALIARDAKANI ALI ,  NUNES RONALD WAYNE

IPC: H01L21/311 ,  G03F7/40 ,  G03F7/42

Abstract: A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.

公开(公告)号：CA2586864A1

公开(公告)日：2006-05-18

申请号：CA2586864

申请日：2005-11-14

Applicant: IBM ,  ST JEAN PHOTOCHIMIE INC

Inventor： KHOJASTEH MAHMOUD ,  VARANASI PUSHKARA RAO ,  FEGHALI KHALIL ,  MOTALLEBI SHAHROKH ,  BOUCHARD LUC ,  MARCOTTE IAN ,  DESILETS DENIS

IPC: C07C69/74 ,  G03F7/20 ,  H01L21/308