公开(公告)号：DE69220393T2

公开(公告)日：1998-01-15

申请号：DE69220393

申请日：1992-02-04

Applicant: IBM

Inventor： ABERNATHEY JOHN R ,  DAUBENSPECK TIMOTHY H ,  LUCE STEPHEN E ,  POLEY DENIS J ,  PREVITI-KELLEY ROSEMARY A ,  VIENS GARY P ,  YOON JUNG H

IPC: G03F7/11 ,  G03F7/09 ,  G03F7/36 ,  H01L21/027

Abstract: A process of patterning a conductive layer on a substrate avoiding webbing yet permitting high density patterning places two layers between the resist and the metal. The first layer is an antireflective coating such as titanium nitride applied to the metal. The second layer is a barrier comprising silicon such as sputtered silicon or SiO2. The barrier layer may also be a thin coating of spin-on glass. The barrier layer prevents interaction between the TiN and acid groups which are generated during exposure of the resist. With this structure in place the resist is applied, exposed and developed.

公开(公告)号：DE69220393D1

公开(公告)日：1997-07-24

申请号：DE69220393

申请日：1992-02-04

Applicant: IBM

Inventor： ABERNATHEY JOHN R ,  DAUBENSPECK TIMOTHY H ,  LUCE STEPHEN E ,  POLEY DENIS J ,  PREVITI-KELLEY ROSEMARY A ,  VIENS GARY P ,  YOON JUNG H

IPC: G03F7/11 ,  G03F7/09 ,  G03F7/36 ,  H01L21/027

Abstract: A process of patterning a conductive layer on a substrate avoiding webbing yet permitting high density patterning places two layers between the resist and the metal. The first layer is an antireflective coating such as titanium nitride applied to the metal. The second layer is a barrier comprising silicon such as sputtered silicon or SiO2. The barrier layer may also be a thin coating of spin-on glass. The barrier layer prevents interaction between the TiN and acid groups which are generated during exposure of the resist. With this structure in place the resist is applied, exposed and developed.