公开(公告)号：JP2006032333A

公开(公告)日：2006-02-02

申请号：JP2005183456

申请日：2005-06-23

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： MARX GEBHARD ,  ALLENSPACH ROLF ,  RIESS WALTER

IPC: H05B33/02 ,  H01L51/50 ,  H05B33/10 ,  H05B33/22

CPC classification number: H01J37/3175 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3177 ,  H01J2237/31779

Abstract: PROBLEM TO BE SOLVED: To provide a capping layer, a photoelectron device having a capping layer with which it is easy to adjust an optical property, a manufacturing method of the photoelectron device and a method to specify a refractive index of the capping layer. SOLUTION: The photoelectron device is equipped with photoelectron members (12, 14, 16) to emit light, a light emission surface (22) and a capping layer (18) on the light emission surface (22). The capping layer (18) contains a mixture of a first material having a first refractive index and a second material having a second refractive index. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种覆盖层，具有易于调节光学性质的覆盖层的光电子器件，光电子器件的制造方法和指定覆盖层的折射率的方法 层。 解决方案：光电子器件配备有发光的光电子部件（12,14,16），发光表面（22）上的发光表面（22）和覆盖层（18）。 封盖层（18）包含具有第一折射率的第一材料和具有第二折射率的第二材料的混合物。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2000101114A

公开(公告)日：2000-04-07

申请号：JP18747699

申请日：1999-07-01

Applicant: IBM

Inventor： MUELLER PETER ,  RIESS WALTER

IPC: G09F9/30 ,  G02F1/1343 ,  H01L31/0224 ,  H01L31/04 ,  H01L33/38 ,  H01L51/52

Abstract: PROBLEM TO BE SOLVED: To obtain an electrode that is high in conductivity, excellent in transparency, and wide in adaptability by a method wherein the electrode that transmits light is equipped with a conductive device pattern, and the circumferential length of the device is shorter than the wavelength of the transmitted light. SOLUTION: A first ITO(indium tin oxide) layer 12 is formed as thick as 5 nm or so on a rectangular glass substrate 11 by sputtering. The layer 12 is 1000 Ω/(square) in resistance and made to serve as an adhesive layer lastly. A conductive grid 13 of gold as thick as 50 nm or so is formed by the use of micro contact printing technique. The conductive grid 13 is equipped with a conductive device or straps 14, and the conductive straps 14 are arranged like a honeycomb possessed of empty spaces 15. Moreover, the strap 14 is smaller in size than the wavelength of light. This means that the conductive strap 14 has its circumferential length shorter than the wavelength λ of a transmitted light.

公开(公告)号：AU2002347506A1

公开(公告)日：2003-07-09

申请号：AU2002347506

申请日：2002-11-26

Applicant: IBM

Inventor： BEIERLEIN TILMAN A ,  CRONE BRIAN ,  DRECHSLER UTE ,  GERMANN ROLAND W ,  KARG SIEGFRIED F ,  MUELLER PETER ,  RIEL HEIKE ,  RIESS WALTER ,  RUHSTALLER BEAT ,  SEIDLER PAUL ,  WIDMER ROLAND W ,  ALVARADO SANTOS F

IPC: H01L51/50 ,  H01L51/52 ,  H05B33/10 ,  H05B33/22 ,  H01L51/20

Abstract: The present invention discloses an electrode structure for electronic and opto-electronic devices. Such a device comprises a first electrode substantially having a conductive layer ( 204 ), a nonmetal layer ( 206 ) formed on the conductive layer, a fluorocarbon layer ( 208 ) formed on the nonmetal layer, a structure ( 210 ) formed on the structure. The electrode may further comprise a buffer layer ( 205 ) between the conductive layer and the nonmetal layer.

公开(公告)号：CA2470206C

公开(公告)日：2010-03-30

申请号：CA2470206

申请日：2002-11-26

Applicant: IBM

Inventor： ALVARADO SANTOS F ,  BEIERLEIN TILMAN A ,  CRONE BRIAN ,  DRECHSLER UTE ,  GERMANN ROLAND W ,  KARG SIEGFRIED F ,  MUELLER PETER ,  RIEL HEIKE ,  RIESS WALTER ,  RUHSTALLER BEAT ,  SEIDLER PAUL ,  WIDMER ROLAND W

IPC: H05B33/22 ,  H01L51/50 ,  H01L51/52 ,  H05B33/10

Abstract: The present invention discloses an electrode structure for electronic and opto-electronic devices. Such a device comprises a first electrode substantially having a conductive layer (204), a nonmetal layer (206) formed on the conductive layer, a fluorocarbon layer (208) formed on the nonmetal layer, a structure (210) formed on the structure. The electrode may further comprise a buffer layer (205) between the conductive layer and the nonmetal layer.

公开(公告)号：DE69831860D1

公开(公告)日：2006-02-23

申请号：DE69831860

申请日：1998-07-04

Applicant: IBM

Inventor： MUELLER PETER ,  RIESS WALTER

IPC: G09F9/30 ,  G02F1/1343 ,  H01B5/02 ,  H01L31/0224 ,  H01L31/04 ,  H01L33/38 ,  H01L51/52 ,  H05B33/12

Abstract: An electrode for an electro-optical device is provided. Light is passing through this electrode which comprises a pattern of conductive elements. The elements have dimensions small compared to the wavelength of light, so that the electrode appear transparent. The light intensity distribution after having penetrated the electrode compared with the light intensity distribution before having penetrated the electrode is influenced by forward scattering.

公开(公告)号：CA2470206A1

公开(公告)日：2003-07-03

申请号：CA2470206

申请日：2002-11-26

Applicant: IBM

Inventor： WIDMER ROLAND W ,  GERMANN ROLAND W ,  RUHSTALLER BEAT ,  BEIERLEIN TILMAN A ,  CRONE BRIAN ,  SEIDLER PAUL ,  ALVARADO SANTOS F ,  MUELLER PETER ,  KARG SIEGFRIED F ,  RIESS WALTER ,  DRECHSLER UTE ,  RIEL HEIKE

IPC: H01L51/50 ,  H01L51/52 ,  H05B33/10 ,  H05B33/22 ,  H01L51/20

Abstract: The present invention discloses an electrode structure for electronic and op to- electronic devices. Such a device comprises a first electrode substantially having a conductive layer (204), a nonmetal layer (206) formed on the conductive layer, a fluorocarbon layer (208) formed on the nonmetal layer, a structure (210) formed on the structure. The electrode may further comprise a buffer layer (205) between the conductive layer and the nonmetal layer.