公开(公告)号：AU2002347506A1

公开(公告)日：2003-07-09

申请号：AU2002347506

申请日：2002-11-26

Applicant: IBM

Inventor： BEIERLEIN TILMAN A ,  CRONE BRIAN ,  DRECHSLER UTE ,  GERMANN ROLAND W ,  KARG SIEGFRIED F ,  MUELLER PETER ,  RIEL HEIKE ,  RIESS WALTER ,  RUHSTALLER BEAT ,  SEIDLER PAUL ,  WIDMER ROLAND W ,  ALVARADO SANTOS F

IPC: H01L51/50 ,  H01L51/52 ,  H05B33/10 ,  H05B33/22 ,  H01L51/20

Abstract: The present invention discloses an electrode structure for electronic and opto-electronic devices. Such a device comprises a first electrode substantially having a conductive layer ( 204 ), a nonmetal layer ( 206 ) formed on the conductive layer, a fluorocarbon layer ( 208 ) formed on the nonmetal layer, a structure ( 210 ) formed on the structure. The electrode may further comprise a buffer layer ( 205 ) between the conductive layer and the nonmetal layer.

公开(公告)号：CA2470206A1

公开(公告)日：2003-07-03

申请号：CA2470206

申请日：2002-11-26

Applicant: IBM

Inventor： WIDMER ROLAND W ,  GERMANN ROLAND W ,  RUHSTALLER BEAT ,  BEIERLEIN TILMAN A ,  CRONE BRIAN ,  SEIDLER PAUL ,  ALVARADO SANTOS F ,  MUELLER PETER ,  KARG SIEGFRIED F ,  RIESS WALTER ,  DRECHSLER UTE ,  RIEL HEIKE

IPC: H01L51/50 ,  H01L51/52 ,  H05B33/10 ,  H05B33/22 ,  H01L51/20

Abstract: The present invention discloses an electrode structure for electronic and op to- electronic devices. Such a device comprises a first electrode substantially having a conductive layer (204), a nonmetal layer (206) formed on the conductive layer, a fluorocarbon layer (208) formed on the nonmetal layer, a structure (210) formed on the structure. The electrode may further comprise a buffer layer (205) between the conductive layer and the nonmetal layer.

公开(公告)号：AU1296001A

公开(公告)日：2001-09-12

申请号：AU1296001

申请日：2000-11-28

Applicant: IBM

Inventor： BEYELER RENE ,  BLOCHL PETER ,  BONA GIAN-LUCA ,  GERMANN ROLAND W ,  HORST FOLKERT ,  OFFREIN BERT J ,  SALEMINK HUUB L ,  WIESMANN DOROTHEA W

IPC: G02B6/12 ,  C01B21/082 ,  C01B21/087 ,  C03B19/14 ,  C03C1/02 ,  C03C3/04 ,  C03C3/11 ,  C23C16/30 ,  C23C16/40 ,  G02B6/10 ,  G02B6/122 ,  G02B6/13 ,  G02B6/132

Abstract: A new material is provided that can be used for the fabrication of planar optical waveguides. The material includes silicon, oxygen and nitrogen and additionally deuterium. Also provided is a method for fabricating planar optical waveguides based on this new material, which uses deuterated gaseous precursors.

公开(公告)号：CA2470206C

公开(公告)日：2010-03-30

申请号：CA2470206

申请日：2002-11-26

Applicant: IBM

Inventor： ALVARADO SANTOS F ,  BEIERLEIN TILMAN A ,  CRONE BRIAN ,  DRECHSLER UTE ,  GERMANN ROLAND W ,  KARG SIEGFRIED F ,  MUELLER PETER ,  RIEL HEIKE ,  RIESS WALTER ,  RUHSTALLER BEAT ,  SEIDLER PAUL ,  WIDMER ROLAND W

IPC: H05B33/22 ,  H01L51/50 ,  H01L51/52 ,  H05B33/10

Abstract: The present invention discloses an electrode structure for electronic and opto-electronic devices. Such a device comprises a first electrode substantially having a conductive layer (204), a nonmetal layer (206) formed on the conductive layer, a fluorocarbon layer (208) formed on the nonmetal layer, a structure (210) formed on the structure. The electrode may further comprise a buffer layer (205) between the conductive layer and the nonmetal layer.

公开(公告)号：CA2397845A1

公开(公告)日：2001-09-07

申请号：CA2397845

申请日：2000-11-28

Applicant: IBM

Inventor： BONA GIAN-LUCA ,  GERMANN ROLAND W ,  OFFREIN BERT J ,  SALEMINK HUUB L ,  WIESMANN DOROTHEA W ,  HORST FOLKERT ,  BEYELER RENE ,  BLOCHL PETER

IPC: G02B6/12 ,  C01B21/082 ,  C01B21/087 ,  C03B19/14 ,  C03C1/02 ,  C03C3/04 ,  C03C3/11 ,  C23C16/30 ,  C23C16/40 ,  G02B6/10 ,  G02B6/122 ,  G02B6/13 ,  G02B6/132

Abstract: A new material is provided that can be used for the fabrication of planar optical waveguides. The material includes silicon, oxygen and nitrogen and additionally deuterium. Also provided is a method for fabricating planar optical waveguides based on this new material, which uses deuterated gaseous precursors.