Abstract:
PROBLEM TO BE SOLVED: To provide an organic electroluminescence device with a reduced deterioration rate and an enhanced efficiency. SOLUTION: An electroluminescene device comprises a positive electrode, a hole-injection layer, an emission layer including an emitting material, an electron-injection layer, and a negative electrode which are formed sequentially. Furthermore, the emission layer comprises a stabilizing material having an energy-bandgap greater than energy-bandgap of the emitting material. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a miniature electronic device, such as a device including a memory device, for reversibly switching among a plurality of resistance states. SOLUTION: The memory device includes a first number of electrodes, and a second number of conductive channels between the subgroups of two electrodes. The channels exhibit electric resistance that can be switched reversibly among different states. The first number is larger than 2, and the second number is larger than a number obtained by dividing the first number by 2. The conductive channels are given in a transition metal oxide material and exhibit resistance that can be switched reversibly caused by a switching phenomenon at the interface between the electrode and the transition metal oxide material. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
The present invention discloses an electrode structure for electronic and op to- electronic devices. Such a device comprises a first electrode substantially having a conductive layer (204), a nonmetal layer (206) formed on the conductive layer, a fluorocarbon layer (208) formed on the nonmetal layer, a structure (210) formed on the structure. The electrode may further comprise a buffer layer (205) between the conductive layer and the nonmetal layer.
Abstract:
The present invention discloses an electrode structure for electronic and opto-electronic devices. Such a device comprises a first electrode substantially having a conductive layer (204), a nonmetal layer (206) formed on the conductive layer, a fluorocarbon layer (208) formed on the nonmetal layer, a structure (210) formed on the structure. The electrode may further comprise a buffer layer (205) between the conductive layer and the nonmetal layer.
Abstract:
The present invention discloses an electrode structure for electronic and opto-electronic devices. Such a device comprises a first electrode substantially having a conductive layer ( 204 ), a nonmetal layer ( 206 ) formed on the conductive layer, a fluorocarbon layer ( 208 ) formed on the nonmetal layer, a structure ( 210 ) formed on the structure. The electrode may further comprise a buffer layer ( 205 ) between the conductive layer and the nonmetal layer.