公开(公告)号：JP2007059903A

公开(公告)日：2007-03-08

申请号：JP2006221924

申请日：2006-08-16

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： RIEL HEIKE E ,  BEIERLEIN TILMAN A ,  RIESS WALTER HEINRICH ,  KARG SIEGFRIED F ,  MUELLER PETER ,  RUHSTALLER BEAT ,  ALVARADO SANTOS F ,  CRONE BRIAN

IPC: H01L51/50

CPC classification number: H01L51/5012 ,  H01L51/005

Abstract: PROBLEM TO BE SOLVED: To provide an organic electroluminescence device with a reduced deterioration rate and an enhanced efficiency.
SOLUTION: An electroluminescene device comprises a positive electrode, a hole-injection layer, an emission layer including an emitting material, an electron-injection layer, and a negative electrode which are formed sequentially. Furthermore, the emission layer comprises a stabilizing material having an energy-bandgap greater than energy-bandgap of the emitting material.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 解决的问题：提供具有降低的劣化率和提高的效率的有机电致发光器件。 解决方案：依次形成的正电极，空穴注入层，包括发光材料的发射层，电子注入层和负极的电致发光器件。 此外，发射层包括具有大于发射材料的能带隙的能带隙的稳定材料。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006108670A

公开(公告)日：2006-04-20

申请号：JP2005286184

申请日：2005-09-30

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ALVARADO SANTOS F ,  MEIJER GERHARD INGMAR ,  BENDNORZ GEORG

IPC: H01L27/105 ,  G11C13/00 ,  H01L45/00 ,  H01L49/00

CPC classification number: G11C13/0007 ,  G11C13/0004 ,  G11C19/00 ,  G11C2213/31 ,  H01L27/24

Abstract: PROBLEM TO BE SOLVED: To provide a miniature electronic device, such as a device including a memory device, for reversibly switching among a plurality of resistance states. SOLUTION: The memory device includes a first number of electrodes, and a second number of conductive channels between the subgroups of two electrodes. The channels exhibit electric resistance that can be switched reversibly among different states. The first number is larger than 2, and the second number is larger than a number obtained by dividing the first number by 2. The conductive channels are given in a transition metal oxide material and exhibit resistance that can be switched reversibly caused by a switching phenomenon at the interface between the electrode and the transition metal oxide material. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种微型电子装置，例如包括存储装置的装置，用于在多个电阻状态之间可逆地切换。 解决方案：存储器件包括第一数量的电极和在两个电极的子组之间的第二数量的导电通道。 通道表现出可在不同状态之间可逆地切换的电阻。 第一数大于2，第二数大于通过将第一数除以2而获得的数字。导电通道在过渡金属氧化物材料中给出并且表现出可由开关现象可逆地切换的电阻 在电极和过渡金属氧化物材料之间的界面处。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：CA2470206A1

公开(公告)日：2003-07-03

申请号：CA2470206

申请日：2002-11-26

Applicant: IBM

Inventor： WIDMER ROLAND W ,  GERMANN ROLAND W ,  RUHSTALLER BEAT ,  BEIERLEIN TILMAN A ,  CRONE BRIAN ,  SEIDLER PAUL ,  ALVARADO SANTOS F ,  MUELLER PETER ,  KARG SIEGFRIED F ,  RIESS WALTER ,  DRECHSLER UTE ,  RIEL HEIKE

IPC: H01L51/50 ,  H01L51/52 ,  H05B33/10 ,  H05B33/22 ,  H01L51/20

Abstract: The present invention discloses an electrode structure for electronic and op to- electronic devices. Such a device comprises a first electrode substantially having a conductive layer (204), a nonmetal layer (206) formed on the conductive layer, a fluorocarbon layer (208) formed on the nonmetal layer, a structure (210) formed on the structure. The electrode may further comprise a buffer layer (205) between the conductive layer and the nonmetal layer.

公开(公告)号：CA2470206C

公开(公告)日：2010-03-30

申请号：CA2470206

申请日：2002-11-26

Applicant: IBM

Inventor： ALVARADO SANTOS F ,  BEIERLEIN TILMAN A ,  CRONE BRIAN ,  DRECHSLER UTE ,  GERMANN ROLAND W ,  KARG SIEGFRIED F ,  MUELLER PETER ,  RIEL HEIKE ,  RIESS WALTER ,  RUHSTALLER BEAT ,  SEIDLER PAUL ,  WIDMER ROLAND W

IPC: H05B33/22 ,  H01L51/50 ,  H01L51/52 ,  H05B33/10

Abstract: The present invention discloses an electrode structure for electronic and opto-electronic devices. Such a device comprises a first electrode substantially having a conductive layer (204), a nonmetal layer (206) formed on the conductive layer, a fluorocarbon layer (208) formed on the nonmetal layer, a structure (210) formed on the structure. The electrode may further comprise a buffer layer (205) between the conductive layer and the nonmetal layer.

公开(公告)号：AU2002347506A1

公开(公告)日：2003-07-09

申请号：AU2002347506

申请日：2002-11-26

Applicant: IBM

Inventor： BEIERLEIN TILMAN A ,  CRONE BRIAN ,  DRECHSLER UTE ,  GERMANN ROLAND W ,  KARG SIEGFRIED F ,  MUELLER PETER ,  RIEL HEIKE ,  RIESS WALTER ,  RUHSTALLER BEAT ,  SEIDLER PAUL ,  WIDMER ROLAND W ,  ALVARADO SANTOS F

IPC: H01L51/50 ,  H01L51/52 ,  H05B33/10 ,  H05B33/22 ,  H01L51/20

Abstract: The present invention discloses an electrode structure for electronic and opto-electronic devices. Such a device comprises a first electrode substantially having a conductive layer ( 204 ), a nonmetal layer ( 206 ) formed on the conductive layer, a fluorocarbon layer ( 208 ) formed on the nonmetal layer, a structure ( 210 ) formed on the structure. The electrode may further comprise a buffer layer ( 205 ) between the conductive layer and the nonmetal layer.