Programmable non-volatile resistance switching device
    2.
    发明专利
    Programmable non-volatile resistance switching device 审中-公开
    可编程非易失性电阻开关器件

    公开(公告)号:JP2006108670A

    公开(公告)日:2006-04-20

    申请号:JP2005286184

    申请日:2005-09-30

    Abstract: PROBLEM TO BE SOLVED: To provide a miniature electronic device, such as a device including a memory device, for reversibly switching among a plurality of resistance states. SOLUTION: The memory device includes a first number of electrodes, and a second number of conductive channels between the subgroups of two electrodes. The channels exhibit electric resistance that can be switched reversibly among different states. The first number is larger than 2, and the second number is larger than a number obtained by dividing the first number by 2. The conductive channels are given in a transition metal oxide material and exhibit resistance that can be switched reversibly caused by a switching phenomenon at the interface between the electrode and the transition metal oxide material. COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题:提供一种微型电子装置,例如包括存储装置的装置,用于在多个电阻状态之间可逆地切换。 解决方案:存储器件包括第一数量的电极和在两个电极的子组之间的第二数量的导电通道。 通道表现出可在不同状态之间可逆地切换的电阻。 第一数大于2,第二数大于通过将第一数除以2而获得的数字。导电通道在过渡金属氧化物材料中给出并且表现出可由开关现象可逆地切换的电阻 在电极和过渡金属氧化物材料之间的界面处。 版权所有(C)2006,JPO&NCIPI

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