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    TRANSPARENT ELECTRODE
    2.
    发明专利
    TRANSPARENT ELECTRODE 失效

    公开(公告)号：JP2000101114A

    公开(公告)日：2000-04-07

    申请号：JP18747699

    申请日：1999-07-01

    Applicant: IBM

    Inventor： MUELLER PETER ,  RIESS WALTER

    IPC: G09F9/30 ,  G02F1/1343 ,  H01L31/0224 ,  H01L31/04 ,  H01L33/38 ,  H01L51/52

    Abstract: PROBLEM TO BE SOLVED: To obtain an electrode that is high in conductivity, excellent in transparency, and wide in adaptability by a method wherein the electrode that transmits light is equipped with a conductive device pattern, and the circumferential length of the device is shorter than the wavelength of the transmitted light. SOLUTION: A first ITO(indium tin oxide) layer 12 is formed as thick as 5 nm or so on a rectangular glass substrate 11 by sputtering. The layer 12 is 1000 Ω/(square) in resistance and made to serve as an adhesive layer lastly. A conductive grid 13 of gold as thick as 50 nm or so is formed by the use of micro contact printing technique. The conductive grid 13 is equipped with a conductive device or straps 14, and the conductive straps 14 are arranged like a honeycomb possessed of empty spaces 15. Moreover, the strap 14 is smaller in size than the wavelength of light. This means that the conductive strap 14 has its circumferential length shorter than the wavelength λ of a transmitted light.

    4.
    发明专利
    未知

    公开(公告)号：DE69831860D1

    公开(公告)日：2006-02-23

    申请号：DE69831860

    申请日：1998-07-04

    Applicant: IBM

    Inventor： MUELLER PETER ,  RIESS WALTER

    IPC: G09F9/30 ,  G02F1/1343 ,  H01B5/02 ,  H01L31/0224 ,  H01L31/04 ,  H01L33/38 ,  H01L51/52 ,  H05B33/12

    Abstract: An electrode for an electro-optical device is provided. Light is passing through this electrode which comprises a pattern of conductive elements. The elements have dimensions small compared to the wavelength of light, so that the electrode appear transparent. The light intensity distribution after having penetrated the electrode compared with the light intensity distribution before having penetrated the electrode is influenced by forward scattering.

    Storage device with 2D configuration of phase change memory integrated circuits
    5.
    发明专利
    Storage device with 2D configuration of phase change memory integrated circuits 未知

    公开(公告)号：GB2524003A

    公开(公告)日：2015-09-16

    申请号：GB201404173

    申请日：2014-03-10

    Applicant: IBM

    Inventor： ANTONAKOPOULOS THEODORE ,  ELEFTHERIOU EVANGELOS STAVROS ,  KOLTSIDAS IOANNIS ,  MUELLER PETER ,  PALLI ASPASIA ,  PLETKA ROMAN

    IPC: G11C13/00 ,  G06F11/10 ,  G06F12/00 ,  G11C11/56 ,  H01L45/00

    Abstract: A storage device 100 and method of operation (figure 5), comprising a channel controller 10 and phase change memory integrated circuits 20, (PCM ICs) arranged in sub-channels 30, wherein each of the sub-channels 30 comprises several PCM ICs connected by at least one data bus line 35, in which at least one data bus line connects to the channel controller which is configured to write data to and/or read data from the PCM ICs according to a matrix configuration of PCM ICs. The number of columns of this matrix configuration respectively corresponds to a number Ns of the sub-channels, Ns ≥ 2, the sub-channels 30 forming a channel; and a number of rows of this matrix configuration respectively corresponds to a number Nl of sub-banks (40), Nl ≥ 2, the sub-banks 40 forming a bank, wherein each of the sub-banks 40 comprises PCM ICs that belong, each, to a distinct sub-channel 30. The channel controller is configured to break data (71,72 figure 2) to be written to the PCM ICs into data chunks (711-71n, 721-72n figure 2) and buffer data chunks according to the data bus lines 35 consistent with the organisation of the sub banks. Thus the asymmetry in the write/read times associated with PCM memories is mitigated.

    SEMI-ACTIVE MAGNETIC SHIELDING FOR QUBIT UNIT COMPONENTS OF QUANTUM COMPUTING APPARATUSES
    7.
    发明专利
    SEMI-ACTIVE MAGNETIC SHIELDING FOR QUBIT UNIT COMPONENTS OF QUANTUM COMPUTING APPARATUSES 未知

    公开(公告)号：AU2021405238B2

    公开(公告)日：2024-12-05

    申请号：AU2021405238

    申请日：2021-12-21

    Applicant: IBM

    Inventor： MUELLER PETER ,  MORF THOMAS

    IPC: G06N10/40

    Abstract: A computer-implemented method of reducing an impact of stray magnetic fields on components of a quantum computing chip is disclosed. The computer implemented method includes applying a first current signal to a first component of a quantum computing chip, whereby the first component generates a stray magnetic field impacting an operation of a second component of the quantum computing chip. The computer implemented method further includes applying a compensation current signal to a shielding circuit of the quantum computing chip, the compensation current signal generated according to a predetermined function of the first signal, to magnetically shield the second component from the stray magnetic field generated by the first component.

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