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公开(公告)号：GB2548762A
公开(公告)日：2017-09-27
申请号：GB201710319
申请日：2016-01-05
Applicant: IBM
Inventor： SANGBUM KIM , CHONG HON LAM
Abstract: A neuromorphic memory circuit (102) includes a programmable resistive memory element (108), an axon LIF line (116) to transmit an axon LIF pulse, and a dendrite LIF line (110) to build up a dendrite LIF charge over time. A first transistor (104) provides a discharge path for the dendrite LIF charge through the programmable resistive memory element (108) when the axon LIF line (116) transmits the axon LIF pulse. An axon STDP line (122) transmits an axon STDP pulse. The axon STDP pulse is longer than the axon LIF pulse. A dendrite STDP line (118) is configured to transmit a dendrite STDP pulse after voltage (V post) at the dendrite LIF line (110) falls below a threshold voltage (120). A second transistor (106) is coupled to the axon STDP line (122) and the programmable resistive memory element (108). The second transistor (106) provides an electrical path for the dendrite STDP pulse through the programmable resistive memory element (108) when the axon STDP line (122) transmits the axon STDP pulse.
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公开(公告)号：GB2548762B
公开(公告)日：2018-05-09
申请号：GB201710319
申请日：2016-01-05
Applicant: IBM
Inventor： SANGBUM KIM , CHONG HON LAM
Abstract: A method for operating a neuromorphic memory circuit. The method includes accumulating a dendrite LIF charge over time on a conductive dendrite LIF line. A first transmitting operation transmits an axon LIF pulse on a conductive axon LIF line. A first switching operation switches on a LIF transistor by the axon LIF pulse such that the LIF transistor provides a discharge path for the dendrite LIF charge through a programmable resistive memory element when the axon LIF line transmits the axon LIF pulse. A second transmitting operation transmits a dendrite STDP pulse if the dendrite LIF charge falls below a threshold voltage. A third transmitting operation transmits an axon STDP pulse on a conductive axon STDP line. A second switching operation switches on a STDP transistor by the axon STDP pulse. The STDP transistor provides an electrical path for the dendrite STDP pulse through the programmable resistive memory element when the axon STDP line transmits the axon STDP pulse.
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公开(公告)号：GB2515101A
公开(公告)日：2014-12-17
申请号：GB201310630
申请日：2013-06-14
Applicant: IBM
Inventor： SANGBUM KIM , KREBS DANIEL , LAM HON CHUNG , POZIDIS CHARALAMPOS
Abstract: Phase-change memory cells 40 are provided for storing information in a plurality of programmable cell states. A phase-change material 41 is located between first and second electrodes 42,43 for applying a read voltage to the phase-change material to read the programmed cell state. An electrically-conductive component 44 and comprising for example Tantalum Nitride (TaN) or Titanium Aluminium Nitride (TiAlN) extends from one electrode to the other, but also is in contact with the phase-change material 41. The resistance presented by the electrically conductive component 44 to a cell current produced by the read voltage placed across the electrodes 43,46 is less than that of the amorphous phase, and greater than that of the crystalline phase, of the phase-change material 41 in any of said cell states. The electrically conductive material may form a sheath or lining surrounding the phase change material 41 and may comprise of layers of material ranging between 1 and 5nm. The sheath may have a base portion disposed between the phase change material and the electrode and may be in contact with both electrodes. The phase change material in cross section may be smaller or narrower near one of the electrodes. The cell may store more than two levels or information s>2. The memory device may further comprise an array of phase change memory cells and a read write controller for reading and writing data.
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