公开(公告)号：HK203396A

公开(公告)日：1996-11-15

申请号：HK203396

申请日：1996-11-07

Applicant: IBM

Inventor： SCHETTLER HELMUT DIPL-ING ,  SCHULZ UWE ,  ZUEHLKE RAINER DR-ING

IPC: H01L23/14 ,  H01L23/538

公开(公告)号：DE2309186A1

公开(公告)日：1974-09-05

申请号：DE2309186

申请日：1973-02-23

Applicant: IBM DEUTSCHLAND

Inventor： FEICHT ERWIN ,  HAUG WERNER DIPL-ING ,  REMSHARDT ROLF DIPL-ING DR ,  SCHETTLER HELMUT DIPL-ING

IPC: G11C11/41 ,  G11C11/414 ,  G11C11/419 ,  H03F3/45 ,  G11C7/00

Abstract: In a monolithic semiconductor storage the bit lines are selectively connected in pairs to the inputs of a read amplifier. In their separated state the potentials of the read lines (VB) and of the associated input lines of the read amplifier (VBS1, VBS2) show the same value and are derived from a common potential (VH). Potentials VB as well as VBS1 and VBS2 are derived via the same respective number of diode voltage drops from potential VH.