Common high and low random bit error correction logic

    公开(公告)号:GB2587948A

    公开(公告)日:2021-04-14

    申请号:GB202017634

    申请日:2019-04-02

    Applicant: IBM

    Abstract: Embodiments of the present invention include a memory module that includes a plurality of memory devices and a memory buffer device. Each of the memory devices are characterized as one of a high random bit error rate (RBER) and a low RBER memory device. The memory buffer device includes a read data interface to receive data read from a memory address on one of the memory devices. The memory buffer device also includes common error correction logic to detect and correct error conditions in data read from both high RBER and low RBER memory devices. The common error correction logic includes a plurality of error correction units which provide different complexity levels of error correction and have different latencies. The error correction units include a first fast path error correction unit for isolating and correcting random symbol errors.

    Efficient and selective sparing of bits in memory systems

    公开(公告)号:GB2585514B

    公开(公告)日:2021-05-19

    申请号:GB202012499

    申请日:2019-01-15

    Applicant: IBM

    Abstract: A memory system for storing data is disclosed, the memory system including a plurality of memory devices configured to store data, each memory device having a plurality of bits, the memory devices configured and associated to work together as a rank to respond to a request; a memory control circuit associated with the plurality of memory devices and configured to output command and control signals to the plurality of memory devices; a detector for detecting a bit error in an operation; and a controller for remapping the bit error to a spare bit lane in response to the detector detecting the bit error.

    Common high and low random bit error correction logic

    公开(公告)号:GB2587948B

    公开(公告)日:2021-11-24

    申请号:GB202017634

    申请日:2019-04-02

    Applicant: IBM

    Abstract: Embodiments of the present invention include a memory module that includes a plurality of memory devices and a memory buffer device. Each of the memory devices are characterized as one of a high random bit error rate (RBER) and a low RBER memory device. The memory buffer device includes a read data interface to receive data read from a memory address on one of the memory devices. The memory buffer device also includes common error correction logic to detect and correct error conditions in data read from both high RBER and low RBER memory devices. The common error correction logic includes a plurality of error correction units which provide different complexity levels of error correction and have different latencies. The error correction units include a first fast path error correction unit for isolating and correcting random symbol errors.

    Efficient and selective sparing of bits in memory systems

    公开(公告)号:GB2585514A

    公开(公告)日:2021-01-13

    申请号:GB202012499

    申请日:2019-01-15

    Applicant: IBM

    Abstract: A memory system for storing data is disclosed, the memory system including a plurality of memory devices configured to store data, each memory device having a plurality of bits, the memory devices configured and associated to work together as a rank to respond to a request; a memory control circuit associated with the plurality of memory devices and configured to output command and control signals to the plurality of memory devices; a detector for detecting a bit error in an operation; and a controller for remapping the bit error to a spare bit lane in response to the detector detecting the bit error.

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