公开(公告)号：EP2047500A4

公开(公告)日：2009-08-26

申请号：EP07853503

申请日：2007-07-24

Applicant: IBM

Inventor： POGGE H BERNHARD ,  YU ROY R

IPC: H01L21/60 ,  H01L21/768 ,  H01L25/065

CPC classification number: H01L24/90 ,  H01L21/76898 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/28 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/05647 ,  H01L2224/13009 ,  H01L2224/13099 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16147 ,  H01L2224/16237 ,  H01L2224/81141 ,  H01L2224/81191 ,  H01L2224/83194 ,  H01L2224/838 ,  H01L2224/9201 ,  H01L2224/9202 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01054 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/1306 ,  H01L2924/15787 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01049 ,  H01L2924/01031 ,  H01L2924/00 ,  H01L2224/05552

公开(公告)号：EP2313923A4

公开(公告)日：2013-02-20

申请号：EP09808777

申请日：2009-08-19

Applicant: IBM

Inventor： FAROOQ MUKTA G ,  HANNON ROBERT ,  IYER SUBRAMANIAN S ,  KOESTER STEVEN J ,  PORUSHOTHAMAN SAMPATH ,  YU ROY R

IPC: H01L27/06 ,  H01L27/105

CPC classification number: H01L27/105 ,  H01L24/11 ,  H01L27/0688 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05024 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599

Abstract: A method is provided for fabricating a 3D integrated circuit structure. According to the method, a first active circuitry layer wafer is provided. The first active circuitry layer wafer comprises a P+ portion covered by a P− layer, and the P− layer includes active circuitry. The first active circuitry layer wafer is bonded face down to an interface wafer that includes a first wiring layer, and then the P+ portion of the first active circuitry layer wafer is selectively removed with respect to the P− layer of the first active circuitry layer wafer. Next, a wiring layer is fabricated on the backside of the P− layer. Also provided are a tangible computer readable medium encoded with a program for fabricating a 3D integrated circuit structure, and a 3D integrated circuit structure.

公开(公告)号：EP2024993A4

公开(公告)日：2011-08-10

申请号：EP07794523

申请日：2007-05-03

Applicant: IBM

Inventor： BUCCHIGNANO JAMES J ,  GIBSON GERALD W ,  ROTHWELL MARY B ,  YU ROY R

IPC: H01L21/768 ,  H01L21/311

CPC classification number: H01L21/31144 ,  H01L21/76802 ,  H01L21/76813

公开(公告)号：JP2009009131A

公开(公告)日：2009-01-15

申请号：JP2008162996

申请日：2008-06-23

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： HUANG WU-SONG ,  JAMES J BUCCHIGNANO ,  VARANASI PUSHKARA R ,  YU ROY R

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/031 ,  G03F7/38 ,  H01L21/027

CPC classification number: G03F7/0045 ,  G03F7/0392 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/126 ,  Y10S430/143

Abstract: PROBLEM TO BE SOLVED: To provide a condensed aromatic structure and a method for photolithographic application.
SOLUTION: A resist composition and a method for forming a patterned feature on a substrate are provided. The composition comprises a molecular glass having at least one condensed polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, and a photosensitive acid generator. The method includes providing a composition including a photosensitive acid generator and a molecular glass having at least one condensed polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, forming a film of the composition on the substrate, patternwise imaging the film, wherein at least one region of the film is exposed to radiation or a beam of particles, resulting in production of an acid catalyst in the exposed region, baking the film, developing the film, resulting in removal of base-soluble exposed regions, wherein a patterned feature from the film remains following the removal.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供冷凝芳族结构和光刻应用的方法。 提供了一种抗蚀剂组合物和在基材上形成图案化特征的方法。 该组合物包含具有至少一个稠合多环部分和至少一个被酸不稳定保护基团保护的碱可溶官能团的分子玻璃和光敏酸产生剂。 该方法包括提供包含光敏酸产生剂和具有至少一个稠合多环部分的分子玻璃和至少一个被酸不稳定保护基团保护的碱可溶官能团的组合物，在该基质上形成该组合物的膜，图案成像 所述膜，其中所述膜的至少一个区域暴露于辐射或颗粒束，导致在所述暴露区域中产生酸催化剂，烘烤所述膜，显影所述膜，导致去除可溶于碱的暴露区域 ，其中来自膜的图案化特征在去除之后保持不变。 版权所有（C）2009，JPO＆INPIT