公开(公告)号：US20210111021A1

公开(公告)日：2021-04-15

申请号：US17068785

申请日：2020-10-12

Applicant: IMEC VZW ,  KATHOLIEKE UNIVERSITEIT LEUVEN

Inventor： Philippe SOUSSAN ,  Vasyl MOTSNYI ,  Luc HASPESLAGH ,  Stefano GUERRIERI ,  Olga SYSHCHYK ,  Bernardette KUNERT ,  Robert LANGER

IPC: H01L21/02 ,  H01L29/66

Abstract: The present invent provides a method comprising forming a first wafer comprising a first substrate of a group IV semiconductor, and a group III-V semiconductor device structure formed by selective area epitaxial growth on a surface portion of a front side of the first substrate. The method further comprises forming a second wafer comprising a second substrate of a group IV semiconductor, and a group IV semiconductor device structure formed on a front side of the second substrate, and bonding the first wafer to the second wafer with the front side of the first substrate facing the front side of the second wafer.

公开(公告)号：US20230378720A1

公开(公告)日：2023-11-23

申请号：US18197841

申请日：2023-05-16

Applicant: IMEC VZW

Inventor： Philippe SOUSSAN ,  Charles CAER ,  Xavier ROTTENBERG

IPC: H01S5/183 ,  H01S5/042 ,  H01S5/42 ,  H01S5/026

CPC classification number: H01S5/18386 ,  H01S5/18361 ,  H01S5/0421 ,  H01S5/423 ,  H01S5/026

Abstract: According to an aspect of the present inventive concept there is provided a light emitting unit, for emitting laser light at a laser wavelength, arranged on a planar surface of a substrate. The unit comprises a first reflective element to reflect light at the laser wavelength, a gain element to amplify the light, and a second reflective element to partially reflect the light, and to emit the laser light. The elements form a stack of layers integrated onto the planar surface. Each layer is parallel with the planar surface, and the gain element is arranged between the first and second reflective elements.
The unit comprises a beam shaping element integrated with the stack. The beam shaping element is configured to shape the emitted laser light. The beam shaping element comprises a plurality of structures spaced apart in a direction of an extension of a layer of the beam shaping element. A size of the structures and/or a distance between adjacent structures is smaller than the laser wavelength.

公开(公告)号：US20240207845A1

公开(公告)日：2024-06-27

申请号：US18389977

申请日：2023-12-20

Applicant: IMEC VZW

Inventor： Lei ZHANG ,  Simone SEVERI ,  Riet LABIE ,  Philippe SOUSSAN ,  Tim STAKENBORG ,  Gauri KARVE

IPC: B01L3/00 ,  B81B7/00 ,  B81C1/00

CPC classification number: B01L3/502715 ,  B81B7/008 ,  B81C1/00238 ,  B01L2200/04 ,  B01L2300/0645 ,  B01L2300/168 ,  B81B2201/05 ,  B81B2203/0338 ,  B81B2207/07 ,  B81C2203/0792

Abstract: According to an aspect of the present inventive concept there is provided a microfluidic device comprising: at least one structure arranged in a pocket-defining layer defining a pocket in the pocket-defining layer; a semiconductor chip arranged in the pocket, the semiconductor chip comprising at least one electrode at the surface of the semiconductor chip; an electrical connection layer arranged above the semiconductor chip, wherein the electrical connection layer comprises electronic connections electrically connected to the at least one electrode and arranged to extend laterally in the electrical connection layer away from the semiconductor chip; at least one fluidic channel extending through the pocket-defining layer and above the semiconductor chip, the fluidic channel being arranged to be in fluidic communication with the at least one electrode.